公开(公告)号：US20250169371A1

公开(公告)日：2025-05-22

申请号：US18676799

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KI WOONG KIM ,  JEONGCHUN RYU ,  KWANG SEOK KIM ,  SEONGGEON PARK ,  SEUNGJAE LEE

IPC: H10N50/10 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetic tunnel junction element including: a pinned layer and a free layer facing each other; a buffer layer on the pinned layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, wherein the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re or Ta, the auxiliary layer includes W, Mo, or Ta.

公开(公告)号：US20250169244A1

公开(公告)日：2025-05-22

申请号：US18955332

申请日：2024-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Joosung Kim ,  Junhee Choi ,  Nakhyun Kim ,  Eunsung Lee

IPC: H01L33/44 ,  H01L25/075 ,  H01L25/16 ,  H01L33/00 ,  H01L33/62

Abstract: A semiconductor light-emitting device includes: a light-emitting stack structure including a first semiconductor layer, an active layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the active layer; and a first passivation layer disposed on a side surface of the light-emitting stack structure.

公开(公告)号：US20250169216A1

公开(公告)日：2025-05-22

申请号：US19029586

申请日：2025-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Bin YUN ,  Kyungho LEE ,  Sung-Ho CHOI

IPC: H10F39/00 ,  H10F39/18

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

公开(公告)号：US20250169192A1

公开(公告)日：2025-05-22

申请号：US18674705

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jin Heo ,  Minho Kim ,  Jooyoung Song ,  Dongyup Lee ,  Chanhee Jeon

IPC: H01L27/02 ,  H01L29/73

Abstract: A semiconductor device includes a first pad configured to receive and transmit a signal; a second pad to which a predetermined reference voltage is input; and an electrostatic protection circuit includes an emitter region electrically connected to the second pad and doped with a first conductivity-type impurity, a base region having a shape surrounding the emitter region in the first direction and the second direction and doped with a second conductivity-type impurity, different from the first conductivity-type impurity, a collector region connected to the first pad and having a shape surrounding the emitter region in the first direction and the second direction, and an impurity region disposed between the collector region and the base region and separated from the collector region and the base region by an element isolation film.

公开(公告)号：US20250169174A1

公开(公告)日：2025-05-22

申请号：US18790772

申请日：2024-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyuman Hwang ,  Jinho Bae ,  Jaewon Jeong ,  Sungil Park

IPC: H01L27/092 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes a lower transistor and an upper transistor located at a higher vertical level than the lower transistor. The lower transistor includes a lower source/drain region, and a lower gate structure and a lower isolation insulating layer that are in contact with a side surface of the lower source/drain region. The upper transistor includes an upper source/drain region, and an upper gate structure and an upper isolation insulating layer that are in contact with a side surface of the upper source/drain region. A bottom surface of the lower isolation insulating layer is located at a same vertical level as a bottom surface of the lower gate structure.

公开(公告)号：US20250169098A1

公开(公告)日：2025-05-22

申请号：US18680609

申请日：2024-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhyuk PARK ,  Jongseob KIM ,  Joonyong KIM ,  Seong Seok YANG ,  Jaejoon OH

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device according to an embodiment includes a channel layer; a barrier layer above the channel layer and including a material having a different energy band gap than the channel layer; a gate electrode above the barrier layer; a gate semiconductor layer between the barrier layer and the gate electrode; a source electrode and a drain electrode on respective sides of the gate electrode and on respective sides of the channel layer and the barrier layer; a field dispersion layer connected to the source electrode and on the gate electrode; and a protection layer between barrier layer and the field dispersion layer, wherein the protection layer includes a first protection layer above the barrier layer and including silicon oxide, and a second protection layer positioned above the first protection layer and including silicon oxynitride.

公开(公告)号：US20250169077A1

公开(公告)日：2025-05-22

申请号：US18663210

申请日：2024-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Joon KIM

IPC: H10B51/20 ,  H10B51/30

Abstract: A semiconductor device includes a cell substrate; a mold structure which includes gate electrodes and mold insulating films alternately stacked on the cell substrate; a channel layer that extends in a vertical direction intersecting an upper side of the cell substrate, inside the mold structure; an insertion layer which includes ferroelectrics and surrounds the channel layer; and a dielectric layer which is not interposed between the insertion layer and the gate electrodes, but is interposed between the insertion layer and the mold insulating films, wherein the gate electrodes are in contact with the insertion layer.

公开(公告)号：US20250169066A1

公开(公告)日：2025-05-22

申请号：US18826334

申请日：2024-09-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daesun Kim ,  Suklae Kim ,  Cheonbae Kim ,  Youngseok Park ,  Taejin Park ,  Hyunchul Yoon ,  Hyeonkyu Lee ,  Sungsoo Yim ,  Hyungeun Choi

IPC: H10B12/00 ,  G11C11/408 ,  G11C11/4091 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18

Abstract: Provided is a semiconductor device. The semiconductor device includes: a first connection region, a first memory block region, and a second connection region sequentially arranged; a first peripheral circuit region vertically overlapping with the first memory block region; first memory cells in the first memory block region; a first word line extending into the first and second connection regions by crossing the first memory block region, and electrically connected to the first memory cells; a first sub-word line driver in the first peripheral circuit region; and a first word line signal path electrically connecting the first word line and the first sub-word line driver. The first word line signal path includes at least one first routing contact coupled to the first word line in the first connection region, and at least one second routing contact coupled to the first word line in the second connection region.

公开(公告)号：US20250169052A1

公开(公告)日：2025-05-22

申请号：US18670998

申请日：2024-05-22

Applicant: Samsung electronics Co., Ltd.

Inventor： Hyunmook Choi ,  Kangoh Yun

IPC: H10B12/00 ,  H10B41/41 ,  H10B43/35 ,  H10B80/00

Abstract: A semiconductor device includes a first substrate structure including a substrate, first circuit devices on the substrate, second circuit devices that extend into the substrate, a gate isolation layer penetrating the substrate and between the second circuit devices, and a second substrate structure electrically connected to the first substrate structure on the first substrate structure, and including gate electrodes electrically connected to the first and second circuit devices. Adjacent second circuit devices among the second circuit devices are disposed symmetrically with respect to the gate isolation layer.

公开(公告)号：US20250168999A1

公开(公告)日：2025-05-22

申请号：US19029075

申请日：2025-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunmoon CHO ,  Jinhyun PARK ,  Seungtaek OH ,  Sunghwan LIM

IPC: H05K5/02

Abstract: An electronic apparatus is provided. The electronic apparatus includes a first housing, a second housing configured to rotate or slide relative to the first housing, and a flexible display configured to be unfolded or bent based on relative movement of the second housing, wherein the flexible display includes a first display area, a second display area, and a folding area connecting the first display area and the second display area, a protective layer, a first adhesive layer disposed beneath the protective layer, wherein the first adhesive layer includes a first adhesive portion disposed in the folding area, and a second adhesive portion provided to enclose a side surface of the first adhesive portion, a second adhesive layer disposed beneath the first adhesive layer, wherein the second adhesive layer includes a third adhesive portion disposed in each of the first and second display areas, which are adjacent to the folding area, and a fourth adhesive portion provided to enclose a side surface of the third adhesive portion, and a display panel disposed beneath the second adhesive layer.