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    Methods for forming and releasing microelectromechanical structures
    7.
    发明授权
    Methods for forming and releasing microelectromechanical structures 有权
    形成和释放微机电结构的方法

    公开(公告)号：US06960305B2

    公开(公告)日：2005-11-01

    申请号：US10402777

    申请日：2003-03-28

    Applicant: Jonathan C. Doan ,  Satyadev R. Patel ,  Andrew G. Huibers ,  Jason S. Reid

    Inventor： Jonathan C. Doan ,  Satyadev R. Patel ,  Andrew G. Huibers ,  Jason S. Reid

    IPC: B81C1/00 ,  C23F1/00

    CPC classification number: C23F4/00 ,  B81B2201/045 ,  B81C1/00476 ,  C03C17/36 ,  C03C17/3663 ,  G02B26/0841 ,  H01L21/32135

    Abstract: A method for making a spatial light modulator is disclosed, that comprises forming an array of micromirrors each having a hinge and a micromirror plate held via the hinge on a substrate, the micromirror plate being disposed in a plane separate from the hinge and having a hinge made of a transition metal nitride, followed by releasing the micromirrors in a spontaneous gas phase chemical etchant. Also disclosed is a projection system that comprises such a spatial light modulator, as well as a light source, condensing optics, wherein light from the light source is focused onto the array of micromirrors, projection optics for projecting light selectively reflected from the array of micromirrors onto a target, and a controller for selectively actuating the micromirrors in the array.

    Abstract translation: 公开了一种用于制造空间光调制器的方法，其包括形成各自具有铰链的微镜阵列和通过所述铰链保持在基板上的微镜板，所述微镜板设置在与所述铰链分离的平面中并且具有铰链 由过渡金属氮化物制成，然后在自发气相化学蚀刻剂中释放微反射镜。 还公开了一种投影系统，其包括这样的空间光调制器以及光源，聚光光学器件，其中来自光源的光聚焦到微镜阵列上，用于投射从微镜阵列反射的光的投影光学器件 以及用于选择性地致动阵列中的微镜的控制器。

    Multiple hinge MEMS device
    8.
    发明授权
    Multiple hinge MEMS device 有权
    多重铰链MEMS器件

    公开(公告)号：US06950223B2

    公开(公告)日：2005-09-27

    申请号：US10346506

    申请日：2003-01-15

    Applicant: Andrew G. Huibers ,  Satyadev R. Patel

    Inventor： Andrew G. Huibers ,  Satyadev R. Patel

    IPC: G02B26/08 ,  G02B26/00 ,  G02B5/08 ,  H01L29/84

    CPC classification number: G02B26/0841

    Abstract: A MEMS device is disclosed comprising: a substrate; a movable micromechanical element movable relative to the substrate; a connector and a hinge for allowing movement of the micromechanical element, wherein the connector is made of a material different than the hinge. In another embodiment of the invention, the connector has a conductivity greater than the hinge. In a further embodiment of the invention, the hinge provides at least 90% of the restoring force to the MEMS device, and the connector provides 10% or less of the restoring force. In a further embodiment of the invention, the connector and the hinge have different spring constants. In a still further embodiment of the invention, the connector experiences a lower strain at maximum deflection of the micromechanical element than the hinge.

    Abstract translation: 公开了一种MEMS器件，包括：衬底; 可移动微机械元件，其相对于所述基板移动; 用于允许微机械元件移动的连接器和铰链，其中连接器由不同于铰链的材料制成。 在本发明的另一个实施例中，连接器的导电率大于铰链。 在本发明的另一实施例中，铰链提供至少90％的恢复力到MEMS装置，并且连接器提供10％或更小的恢复力。 在本发明的另一实施例中，连接器和铰链具有不同的弹簧常数。 在本发明的另一个实施例中，连接器在微型机械元件的最大偏转方面比铰链经历较低的应变。

    Apparatus and method for flow of process gas in an ultra-clean environment
    9.
    发明授权
    Apparatus and method for flow of process gas in an ultra-clean environment 有权
    在超清洁环境中工艺气体流动的装置和方法

    公开(公告)号：US06949202B1

    公开(公告)日：2005-09-27

    申请号：US09649569

    申请日：2000-08-28

    Applicant: Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Niles K. MacDonald

    IPC: B81B3/00 ,  C23F1/00 ,  C23F1/08 ,  C23F1/12

    CPC classification number: C23F1/08 ,  B81C1/00587 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/67017

    Abstract: Processes for the addition or removal of a layer or region from a workpiece material by contact with a process gas in the manufacture of a microstructure are enhanced by the use of recirculation of the process gas. Recirculation is effected by a pump that has no sliding or abrading parts that contact the process gas, nor any wet (such as oil) seals or purge gas in the pump. Improved processing can be achieved by a process chamber that contains a baffle, a perforated plate, or both, appropriately situated in the chamber to deflect the incoming process gas and distribute it over the workpiece surface. In certain embodiments, a diluent gas is added to the recirculation loop and continuously circulated therein, followed by the bleeding of the process gas (such as an etchant gas) into the recirculation loop. Also, cooling of the process gas, etching chamber and/or sample platen can aid the etching process. The method is particularly useful for adding to or removing material from a sample of microscopic dimensions.

    Abstract translation: 通过使用工艺气体的再循环来增强在制造微结构时通过与工艺气体接触而从工件材料中添加或除去层或区域的工艺。 循环由不具有接触工艺气体的滑动或研磨部件的泵以及泵中的任何湿的（例如油）密封件或吹扫气体来实现。 改进的处理可以通过包含挡板，多孔板或两者的处理室来实现，该处理室适当地位于室中以偏转进入的工艺气体并将其分布在工件表面上。 在某些实施方案中，将稀释气体加入再循环回路并在其中连续循环，随后将工艺气体（例如蚀刻剂气体）渗入再循环回路中。 此外，工艺气体，蚀刻室和/或样品台的冷却可以帮助蚀刻工艺。 该方法对于从微观尺寸的样品中添加或除去材料特别有用。

    Method for achieving improved selectivity in an etching process
    10.
    发明授权
    Method for achieving improved selectivity in an etching process 有权
    在蚀刻过程中实现改进的选择性的方法

    公开(公告)号：US06942811B2

    公开(公告)日：2005-09-13

    申请号：US09954864

    申请日：2001-09-17

    Applicant: Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi

    Inventor： Satyadev R. Patel ,  Gregory P. Schaadt ,  Douglas B. MacDonald ,  Hongqin Shi

    IPC: B44C1/22 ,  B81B3/00 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C23F1/08 ,  C23F1/12

    CPC classification number: B81B3/00 ,  B81B2201/045 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00595 ,  B81C99/0025 ,  B81C2201/0138 ,  B82Y30/00 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/32135

    Abstract: The etching of a sacrificial silicon portion in a microstructure such as a microelectromechanical structure by the use of etchant gases that are noble gas fluorides or halogen fluorides is performed with greater selectivity toward the silicon portion relative to other portions of the microstructure by slowing the etch rate. The etch rate is preferably 30 um/hr or less, and can be 3 um/hr or even less. The selectivity is also improved by the addition of non-etchant gaseous additives to the etchant gas. Preferably the non-etchant gaseous additives that have a molar-averaged formula weight that is below that of molecular nitrogen offer significant advantages over gaseous additives of higher formula weights by causing completion of the etch in a shorter period of time while still achieving the same improvement in selectivity. The etch process is also enhanced by the ability to accurately determine the end point of the removal step. A vapor phase etchant is used to remove a material that has been deposited on a substrate, with or without other deposited structure thereon. By creating an impedance at the exit of an etching chamber (or downstream thereof), as the vapor phase etchant passes from the etching chamber, a gaseous product of the etching reaction is monitored, and the end point of the removal process can be determined. The vapor phase etching process can be flow through, a combination of flow through and pulse, or recirculated back to the etching chamber. Also, the etch selectivity can be improved by doping the sacrificial material.

    Abstract translation: 通过使用作为惰性气体氟化物或卤素氟化物的蚀刻剂气体在诸如微机电结构的微结构中蚀刻牺牲硅部分，相对于微结构的其它部分，通过减慢蚀刻速率对硅部分具有更大的选择性 。 蚀刻速率优选为30um / hr或更小，并且可以为3um / hr或甚至更小。 通过向蚀刻剂气体中添加非蚀刻剂气体添加剂也提高了选择性。 优选地，具有低于分子氮的摩尔平均配方重量的非蚀刻剂气态添加剂相对于具有较高配方重量的气体添加剂提供了显着的优点，通过在更短的时间段内完成蚀刻，同时仍然实现相同的改进 选择性。 通过精确确定去除步骤的终点的能力也可以增强蚀刻工艺。 气相蚀刻剂用于去除已经沉积在基底上的材料，其上具有或不具有其它沉积结构。 通过在蚀刻室（或其下游）的出口处产生阻抗，当气相蚀刻剂从蚀刻室通过时，监测蚀刻反应的气态产物，并且可以确定去除过程的终点。 气相蚀刻工艺可以流过，流过和脉冲的组合，或再循环回蚀刻室。 此外，通过掺杂牺牲材料可以改善蚀刻选择性。

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