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公开(公告)号:US09385055B2
公开(公告)日:2016-07-05
申请号:US12860156
申请日:2010-08-20
IPC分类号: H01L23/48 , H01L23/04 , H01L23/367 , H01L23/42 , H01L25/065 , H01L21/56 , H01L23/10 , H01L23/498
CPC分类号: H01L23/04 , H01L21/563 , H01L23/10 , H01L23/367 , H01L23/42 , H01L23/49827 , H01L25/0652 , H01L25/0657 , H01L2224/16225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/06575 , H01L2225/06589 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.
摘要翻译: 提供一种组装半导体芯片器件的方法,其包括将插入件放置在第一半导体芯片上。 插入器包括安置在第一半导体芯片上的第一表面和适于热接触散热器的第二表面。 第二表面包括第一孔。 第二半导体芯片放置在第一孔中。
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公开(公告)号:US07848139B2
公开(公告)日:2010-12-07
申请号:US12233389
申请日:2008-09-18
申请人: Yizhang Yang , Haiwen Xi , Yiming Shi , Kaizhong Gao , Jun Ouyang , Song S. Xue
发明人: Yizhang Yang , Haiwen Xi , Yiming Shi , Kaizhong Gao , Jun Ouyang , Song S. Xue
IPC分类号: G11C11/00
CPC分类号: G11C13/004 , G11C13/0004 , G11C13/0069 , G11C2013/0045 , G11C2013/0078 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/1226 , H01L45/1286 , H01L45/144
摘要: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.
摘要翻译: 存储器件的导电写入线包括用于设置和复位器件的相变材料(PCM)存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸,并提供电绝缘,同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度,电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道,使得电阻加热部分位于通道内。
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公开(公告)号:US08635044B2
公开(公告)日:2014-01-21
申请号:US13095406
申请日:2011-04-27
IPC分类号: G01K13/00
CPC分类号: G01K7/42
摘要: Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step. Using this IIR digital filter, temperature response subject to arbitrary time-dependent power can be calculated in very small amount of time compared with prior art methods.
摘要翻译: 本文描述了用于改进电子系统中瞬态热响应测量的系统和方法的实施例。 本公开的实施例使用电子系统的已知热传递函数来产生具有与给定功率激励相同的动态响应的等效电阻器 - 电容器(RC)网络,因为实际电子系统将具有该功率激励。 使用热电系统之间的类比,构建了Foster RC网络,其包括多个RC级,其中电阻器和电容器并联连接。 随后,模拟热RC网络被转换成无限脉冲响应(IIR)数字滤波器,其系数可以获得模拟热RC网络的Z变换。 该IIR数字滤波器建立了当前时间步长的温度输出与前一时间步长的测量功率输入之间的递归关系。 使用该IIR数字滤波器,与现有技术方法相比,可以以非常小的时间量计算受任意时间依赖功率的温度响应。
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公开(公告)号:US20120043668A1
公开(公告)日:2012-02-23
申请号:US12860156
申请日:2010-08-20
IPC分类号: H01L23/538 , H01L21/50
CPC分类号: H01L23/04 , H01L21/563 , H01L23/10 , H01L23/367 , H01L23/42 , H01L23/49827 , H01L25/0652 , H01L25/0657 , H01L2224/16225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/06575 , H01L2225/06589 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.
摘要翻译: 提供一种组装半导体芯片器件的方法,其包括将插入件放置在第一半导体芯片上。 插入器包括安置在第一半导体芯片上的第一表面和适于热接触散热器的第二表面。 第二表面包括第一孔。 第二半导体芯片放置在第一孔中。
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公开(公告)号:US20100067288A1
公开(公告)日:2010-03-18
申请号:US12233389
申请日:2008-09-18
申请人: Yizhang Yang , Haiwen Xi , Yiming Shi , Kaizhong Gao , Jun Ouyang , Song S. Xue
发明人: Yizhang Yang , Haiwen Xi , Yiming Shi , Kaizhong Gao , Jun Ouyang , Song S. Xue
IPC分类号: G11C11/00
CPC分类号: G11C13/004 , G11C13/0004 , G11C13/0069 , G11C2013/0045 , G11C2013/0078 , G11C2013/008 , H01L45/06 , H01L45/1206 , H01L45/1226 , H01L45/1286 , H01L45/144
摘要: A conductive write line of a memory device includes a resistive heating portion for setting and resetting a phase-change material (PCM) storage cell of the device. A dielectric interface extends between the resistive heating portion of the write line and a side of the storage cell, and provides electrical insulation while allowing for thermal coupling between the resistive heating portion and the storage cell. A width of the resistive heating portion of the write line may be less than a width of the storage cell and/or may be less than a width of adjacent portions of the write line, between which the resistive heating portion extends. The side of the storage cell may define a channel of the storage cell through which the write line passes, such that the resistive heating portion is located within the channel.
摘要翻译: 存储器件的导电写入线包括用于设置和复位器件的相变材料(PCM)存储单元的电阻加热部分。 电介质界面在写入线的电阻加热部分和存储单元的一侧之间延伸,并提供电绝缘,同时允许电阻加热部分和存储单元之间的热耦合。 写入线的电阻加热部分的宽度可以小于存储单元的宽度和/或可以小于写入线的相邻部分的宽度,电阻加热部分在其之间延伸。 存储单元的侧面可以限定写入线通过的存储单元的通道,使得电阻加热部分位于通道内。
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公开(公告)号:US20120278029A1
公开(公告)日:2012-11-01
申请号:US13095406
申请日:2011-04-27
CPC分类号: G01K7/42
摘要: Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step. Using this IIR digital filter, temperature response subject to arbitrary time-dependent power can be calculated in very small amount of time compared with prior art methods.
摘要翻译: 本文描述了用于改进电子系统中瞬态热响应测量的系统和方法的实施例。 本公开的实施例使用电子系统的已知热传递函数来产生具有与给定功率激励相同的动态响应的等效电阻器 - 电容器(RC)网络,因为实际电子系统将具有该功率激励。 使用热电系统之间的类比,构建了Foster RC网络,其包括多个RC级,其中电阻器和电容器并联连接。 随后,模拟热RC网络被转换成无限脉冲响应(IIR)数字滤波器,其系数可以获得模拟热RC网络的Z变换。 该IIR数字滤波器建立了当前时间步长的温度输出与前一时间步长的测量功率输入之间的递归关系。 使用该IIR数字滤波器,与现有技术方法相比,可以以非常小的时间量计算受任意时间依赖功率的温度响应。
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公开(公告)号:US08034662B2
公开(公告)日:2011-10-11
申请号:US12406271
申请日:2009-03-18
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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公开(公告)号:US09263364B2
公开(公告)日:2016-02-16
申请号:US13215416
申请日:2011-08-23
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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公开(公告)号:US20110304051A1
公开(公告)日:2011-12-15
申请号:US13215416
申请日:2011-08-23
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
IPC分类号: H01L23/48
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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公开(公告)号:US20100237496A1
公开(公告)日:2010-09-23
申请号:US12406271
申请日:2009-03-18
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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