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公开(公告)号:US09385055B2
公开(公告)日:2016-07-05
申请号:US12860156
申请日:2010-08-20
IPC分类号: H01L23/48 , H01L23/04 , H01L23/367 , H01L23/42 , H01L25/065 , H01L21/56 , H01L23/10 , H01L23/498
CPC分类号: H01L23/04 , H01L21/563 , H01L23/10 , H01L23/367 , H01L23/42 , H01L23/49827 , H01L25/0652 , H01L25/0657 , H01L2224/16225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/06575 , H01L2225/06589 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.
摘要翻译: 提供一种组装半导体芯片器件的方法,其包括将插入件放置在第一半导体芯片上。 插入器包括安置在第一半导体芯片上的第一表面和适于热接触散热器的第二表面。 第二表面包括第一孔。 第二半导体芯片放置在第一孔中。
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公开(公告)号:US20120278029A1
公开(公告)日:2012-11-01
申请号:US13095406
申请日:2011-04-27
CPC分类号: G01K7/42
摘要: Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step. Using this IIR digital filter, temperature response subject to arbitrary time-dependent power can be calculated in very small amount of time compared with prior art methods.
摘要翻译: 本文描述了用于改进电子系统中瞬态热响应测量的系统和方法的实施例。 本公开的实施例使用电子系统的已知热传递函数来产生具有与给定功率激励相同的动态响应的等效电阻器 - 电容器(RC)网络,因为实际电子系统将具有该功率激励。 使用热电系统之间的类比,构建了Foster RC网络,其包括多个RC级,其中电阻器和电容器并联连接。 随后,模拟热RC网络被转换成无限脉冲响应(IIR)数字滤波器,其系数可以获得模拟热RC网络的Z变换。 该IIR数字滤波器建立了当前时间步长的温度输出与前一时间步长的测量功率输入之间的递归关系。 使用该IIR数字滤波器,与现有技术方法相比,可以以非常小的时间量计算受任意时间依赖功率的温度响应。
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公开(公告)号:US08034662B2
公开(公告)日:2011-10-11
申请号:US12406271
申请日:2009-03-18
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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公开(公告)号:US08635044B2
公开(公告)日:2014-01-21
申请号:US13095406
申请日:2011-04-27
IPC分类号: G01K13/00
CPC分类号: G01K7/42
摘要: Embodiments of systems and methods for improved measurement of transient thermal responses in electronic systems are described herein. Embodiments of the disclosure use the known thermal transfer function of an electronic system to generate an equivalent resistor-capacitor (RC) network having a dynamic response that is identical to a given power excitation as the actual electronic system would have to that power excitation. Using the analogy between thermal and electrical systems, a Foster RC network is constructed, comprising a plurality of RC stages in which resistors and capacitors are connected in parallel. Subsequently, the analog thermal RC network is converted into an infinite impulse response (IIR) digital filter, whose coefficients can be obtained the Z-transform of the analog thermal RC network. This IIR digital filter establishes the recursive relationship between temperature output at the current time step and measured power input at the previous time step. Using this IIR digital filter, temperature response subject to arbitrary time-dependent power can be calculated in very small amount of time compared with prior art methods.
摘要翻译: 本文描述了用于改进电子系统中瞬态热响应测量的系统和方法的实施例。 本公开的实施例使用电子系统的已知热传递函数来产生具有与给定功率激励相同的动态响应的等效电阻器 - 电容器(RC)网络,因为实际电子系统将具有该功率激励。 使用热电系统之间的类比,构建了Foster RC网络,其包括多个RC级,其中电阻器和电容器并联连接。 随后,模拟热RC网络被转换成无限脉冲响应(IIR)数字滤波器,其系数可以获得模拟热RC网络的Z变换。 该IIR数字滤波器建立了当前时间步长的温度输出与前一时间步长的测量功率输入之间的递归关系。 使用该IIR数字滤波器,与现有技术方法相比,可以以非常小的时间量计算受任意时间依赖功率的温度响应。
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公开(公告)号:US20120043668A1
公开(公告)日:2012-02-23
申请号:US12860156
申请日:2010-08-20
IPC分类号: H01L23/538 , H01L21/50
CPC分类号: H01L23/04 , H01L21/563 , H01L23/10 , H01L23/367 , H01L23/42 , H01L23/49827 , H01L25/0652 , H01L25/0657 , H01L2224/16225 , H01L2224/73204 , H01L2224/73253 , H01L2225/06513 , H01L2225/06517 , H01L2225/06562 , H01L2225/06575 , H01L2225/06589 , H01L2924/10253 , H01L2924/15311 , H01L2924/00
摘要: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.
摘要翻译: 提供一种组装半导体芯片器件的方法,其包括将插入件放置在第一半导体芯片上。 插入器包括安置在第一半导体芯片上的第一表面和适于热接触散热器的第二表面。 第二表面包括第一孔。 第二半导体芯片放置在第一孔中。
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公开(公告)号:US09263364B2
公开(公告)日:2016-02-16
申请号:US13215416
申请日:2011-08-23
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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公开(公告)号:US20110304051A1
公开(公告)日:2011-12-15
申请号:US13215416
申请日:2011-08-23
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
IPC分类号: H01L23/48
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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公开(公告)号:US20100237496A1
公开(公告)日:2010-09-23
申请号:US12406271
申请日:2009-03-18
申请人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
发明人: Maxat Touzelbaev , Gamal Refai-Ahmed , Yizhang Yang , Bryan Black
CPC分类号: H01L23/42 , H01L2224/0554 , H01L2224/05573 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/05669 , H01L2224/13025 , H01L2224/16225 , H01L2224/29076 , H01L2224/29109 , H01L2224/29111 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29164 , H01L2224/29169 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2924/01047 , H01L2924/013 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要: Various semiconductor chip thermal interface material methods and apparatus are disclosed. In one aspect, a method of establishing thermal contact between a first semiconductor chip and a heat spreader is provided. The method includes placing a thermal interface material layer containing a support structure on the first semiconductor chip. The heat spreader is positioned proximate the thermal interface material layer. The thermal interface material layer is reflowed to establish thermal contact with both the first semiconductor chip and the heat spreader.
摘要翻译: 公开了各种半导体芯片热界面材料的方法和装置。 一方面,提供了一种在第一半导体芯片和散热器之间建立热接触的方法。 该方法包括将包含支撑结构的热界面材料层放置在第一半导体芯片上。 散热器位于热界面材料层附近。 热界面材料层被回流以与第一半导体芯片和散热器两者建立热接触。
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公开(公告)号:US08868944B2
公开(公告)日:2014-10-21
申请号:US12754758
申请日:2010-04-06
CPC分类号: G06F1/206 , G06F1/3203 , G06F1/324 , G06F1/3296 , H05K7/20836 , Y02D10/126 , Y02D10/16 , Y02D10/172
摘要: Various computing center control and cooling apparatus and methods are disclosed. In one aspect, a method of controlling plural processors of a computing system is provided. The method includes monitoring activity levels of the plural processors over a time interval to determine plural activity level scores. The plural activity level scores are compared with predetermined processor activity level scores corresponding to preselected processor operating modes to determine a recommended operating mode for each of the plural processors. Each of the plural processors is instructed to operate in one of the recommended operating modes.
摘要翻译: 公开了各种计算中心控制和冷却装置和方法。 一方面,提供一种控制计算系统的多个处理器的方法。 该方法包括在一段时间间隔内监视多个处理器的活动级别,以确定多个活动级别得分。 将多个活动水平分数与对应于预选处理器操作模式的预定处理器活动水平评分进行比较,以确定多个处理器中的每一个的推荐操作模式。 指示多个处理器中的每一个以推荐的操作模式之一进行操作。
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公开(公告)号:US07911791B2
公开(公告)日:2011-03-22
申请号:US12490805
申请日:2009-06-24
CPC分类号: H01L23/467 , F28D15/02 , F28F1/34 , H01L23/427 , H01L2924/0002 , Y10T29/4935 , H01L2924/00
摘要: Various heat sinks, method of use and manufacture thereof are disclosed. In one aspect, a method of providing thermal management for a circuit device is provided. The method includes placing a heat sink in thermal contact with the circuit device wherein the heat sink includes a base member in thermal contact with the circuit device, a first shell coupled to the base member that includes a first inclined internal surface, a lower end and first plurality of orifices at the lower end to enable a fluid to transit the first shell, and at least one additional shell coupled to the base member and nested within the first shell. The at least one additional shell includes a second inclined internal surface and a second plurality of orifices to enable the fluid to transit the at least one additional shell. The fluid is moved through the first shell and the at least one additional shell.
摘要翻译: 公开了各种散热器,其使用方法和制造方法。 一方面,提供了一种为电路装置提供热管理的方法。 该方法包括将散热器放置成与电路装置热接触,其中散热器包括与电路装置热接触的基座部件,耦合到基部部件的第一壳体,其包括第一倾斜内表面,下端和 在下端的第一组多个孔以使流体能够转移第一壳体,以及至少一个额外的壳体,其联接到基部构件并嵌套在第一壳体内。 所述至少一个附加壳体包括第二倾斜内表面和第二多个孔口,以使流体能够转移至少一个附加壳体。 流体通过第一壳体和至少一个附加壳体移动。
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