公开(公告)号：US10439095B2

公开(公告)日：2019-10-08

申请号：US15546030

申请日：2015-10-14

Applicant: 1366 TECHNOLOGIES INC.

Inventor： Ralf Jonczyk ,  Brian D. Kernan ,  G. D. Stephen Hudelson ,  Adam M. Lorenz ,  Emanuel M. Sachs

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/0288 ,  C30B29/06 ,  C30B28/04 ,  C30B19/12 ,  C30B35/00 ,  C30B31/04 ,  C30B11/00 ,  C30B31/02

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：US10072351B2

公开(公告)日：2018-09-11

申请号：US15306787

申请日：2015-04-17

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Emanuel M. Sachs ,  Ralf Jonczyk ,  Adam L. Lorenz ,  Richard L. Wallace ,  G. D. Stephen Hudelson

IPC: H01L29/06 ,  C30B11/02 ,  C30B29/06 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18

CPC classification number: C30B11/02 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Semi-conductor wafers with thin and thicker regions at controlled locations may be for Photovoltaics. The interior may be less than 180 microns or thinner, to 50 microns, with a thicker portion, at 180-250 microns. Thin wafers have higher efficiency. A thicker perimeter provides handling strength. Thicker stripes, landings and islands are for metallization coupling. Wafers may be made directly from a melt upon a template with regions of different heat extraction propensity arranged to correspond to locations of relative thicknesses. Interstitial oxygen is less than 6×1017 atoms/cc, preferably less than 2×1017, total oxygen less than 8.75×1017 atoms/cc, preferably less than 5.25×1017. Thicker regions form adjacent template regions having relatively higher heat extraction propensity; thinner regions adjacent regions with lesser extraction propensity. Thicker template regions have higher extraction propensity. Functional materials upon the template also have differing extraction propensities.

公开(公告)号：US10770613B2

公开(公告)日：2020-09-08

申请号：US16559971

申请日：2019-09-04

Applicant: 1366 TECHNOLOGIES INC.

Inventor： Ralf Jonczyk ,  Brian D. Kernan ,  G.D. Stephen Hudelson ,  Adam M. Lorenz ,  Emanuel M. Sachs

IPC: H01L31/06 ,  H01L31/00 ,  H01L31/062 ,  H01L31/113 ,  H01L31/18 ,  H01L31/0224 ,  C30B11/00 ,  C30B19/12 ,  C30B28/04 ,  C30B29/06 ,  C30B31/02 ,  C30B31/04 ,  C30B35/00 ,  H01L21/00 ,  H01L31/068 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/0288

Abstract: A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant can not enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.

公开(公告)号：US09643342B2

公开(公告)日：2017-05-09

申请号：US14250581

申请日：2014-04-11

Applicant: 1366 Technologies, Inc.

Inventor： Emanuel M. Sachs ,  Richard L. Wallace ,  Eerik T. Hantsoo ,  Adam M. Lorenz ,  G. D. Stephen Hudelson ,  Ralf Jonczyk

IPC: C30B28/04 ,  B29C33/44 ,  C30B11/00 ,  C30B15/30 ,  C30B19/06 ,  C30B29/06

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

公开(公告)号：US20140220171A1

公开(公告)日：2014-08-07

申请号：US14250581

申请日：2014-04-11

Applicant: 1366 TECHNOLOGIES, INC.

Inventor： Emanuel M. Sachs ,  Richard L. Wallace ,  Eerik T. Hantsoo ,  Adam M. Lorenz ,  G.D. Stephen Hudelson ,  Ralf Jonczyk

IPC: B29C33/44

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Abstract translation: 可以在模板上施加压力差，并且在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的松弛可以允许晶片的释放。 模具片可以比熔体更冷。 通过成形晶片的厚度提取热量。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板可以允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

公开(公告)号：US08696810B2

公开(公告)日：2014-04-15

申请号：US13654638

申请日：2012-10-18

Applicant: 1366 Technologies Inc.

Inventor： Eerik T. Hantsoo ,  G. D. Stephen Hudelson ,  Ralf Jonczyk ,  Adam M. Lorenz ,  Emanuel M. Sachs ,  Richard L. Wallace

IPC: C30B15/22

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Abstract translation: 在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。

公开(公告)号：US20130036967A1

公开(公告)日：2013-02-14

申请号：US13654638

申请日：2012-10-18

Applicant: 1366 TECHNOLOGIES INC.

Inventor： Emanuel M. Sachs ,  Richard L. Wallace ,  Eerik T. Hantsoo ,  Adam M. Lorenz ,  G.D. Stephen Hudelson ,  Ralf Jonczyk

IPC: C30B11/02

CPC classification number: B29C33/44 ,  C30B11/007 ,  C30B15/30 ,  C30B19/068 ,  C30B28/04 ,  C30B29/06

Abstract: A pressure differential is applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential allows release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted almost exclusively through the thickness of the forming wafer. The liquid and solid interface is substantially parallel to the mold sheet. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet must allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.

Abstract translation: 在模板上施加压差，在其上形成半导体（例如硅）晶片（例如，用于太阳能电池）。 压差的放松允许晶片的释放。 模具片可以比熔体更冷。 几乎完全通过成形晶片的厚度提取热量。 液体和固体界面基本上平行于模片。 凝固体的温度在其宽度上基本均匀，导致低应力和位错密度和更高的晶体学质量。 模板必须允许气体流过它。 可以通过以下方式将熔体引入片材：与熔体的顶部完全区域接触; 穿过熔体与模板的部分区域接触，无论是水平还是垂直的，或者在其间; 并将模具浸入熔体中。 可以通过许多方法控制晶粒尺寸。