Abstract:
A gas spraying apparatus according to the embodiment of the present invention includes a spray part disposed and aligned on one side outside a substrate in the width direction of the substrate, and having a plurality of nozzles for spraying gas toward the substrate, and a spray control unit for automatically controlling whether or not each of a plurality of nozzles sprays gas such that a gas density distribution type in the width direction of the substrate becomes a targeted gas density distribution type by the gas sprayed through the plurality of nozzles. Therefore, according to the embodiment of the present invention, it is easy to carry out the process with a plurality of types of process types or a plurality of types of gas density distribution types, and a time for adjusting the open or close operation of the plurality of nozzles can be shortened.
Abstract:
Provided are an apparatus and method for forming a thin film. The apparatus for forming a thin film include a chamber configured to define a substrate processing space therein, a substrate support part connected to the chamber to support a substrate inside the chamber, a heat source part connected to the chamber to face the substrate support part, and a plasma generation part connected to the chamber to supply radicals between the substrate support part and the heat source part at at least two points.
Abstract:
Disclosed are an apparatus and method of detecting a temperature through a pyrometer in a non-contact manner, and an apparatus for processing a substrate using the apparatus, and more particularly, an apparatus and method of detecting a temperature, which precisely measures a temperature without any effect by humidity, and an apparatus for processing a substrate using the same. In an exemplary embodiment, an apparatus for detecting a temperature includes a humidity sensor configured to measure a humidity value, a temperature compensation database configured to store a temperature compensation value for each humidity value, and a pyrometer in which, assuming that a wavelength band including a transmittance limiting wavelength band as a wavelength band having a transmittance less than a first threshold value due to the humidity and a transmittance allowing wavelength band as a wavelength band having a transmittance more than a second threshold value due to the humidity is a wavelength band to be compensated, a non-contact temperature is calculated by adding a temperature compensation value corresponding to a humidity value detected by the humidity sensor to a temperature to be compensated calculated by measuring a wavelength intensity of the wavelength band to be compensated radiated from an object to be measured.
Abstract:
Disclosed is a calibrating apparatus which is adapted to remove a measurement deviation of a pyrometer, and more particularly, to an apparatus for calibrating a pyrometer, which calibrates a reference value so as to remove a deviation in a temperature measured in a pyrometer. The apparatus for calibrating a pyrometer includes a blackbody including a radiant space from which radiant energy is radiated, a body housing configured to receive the blackbody therein and including a light output wall having a light output port connected with the radiant space, a light output wall protecting cover configured to be coupled with the light output wall of the body housing so as to define a passage connecting the light output wall of the body housing and an outside environment, and a fixing member configured to fix the light output wall protecting cover to the light output wall of the body housing.
Abstract:
The present inventive concept relates to a substrate processing apparatus and a substrate processing method, which can accurately measure temperature in even a low-temperature region, thus making it possible to efficiently manage heat. The substrate processing apparatus comprises: a chamber for providing a processing space in which a substrate is processed; a substrate support provided in the processing space of the chamber in order to support the substrate; a heater provided with a plurality of semiconductor laser modules that emit light toward a first surface of the substrate; and a pyrometer which is provided on the side of a second surface of the substrate facing the first surface and detects light emitted from the substrate to measure the temperature of the substrate. The main light-emitting wavelength of the plurality of semiconductor laser modules may be shorter than the measurement wavelength of the pyrometer.
Abstract:
The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.
Abstract:
The present disclosure relates to a power control device for temperature control capable of phase control compensation according to power fluctuations, a thermal processing system having the same, and a temperature control method for the thermal processing system. The power control device for temperature control includes a power control unit configured to control an amount of power supplied to a heating source by controlling a phase of AC power supplied from a power source and a power measurement unit connected to the power source and configured to measure the AC power, wherein the power control unit controls the phase of the AC power by compensating a phase angle according to a difference between a reference power value and the measured value measured by the power measurement unit.
Abstract:
A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (εt0) by applying a correction value for correcting the total emissivity (εt) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (εt0).
Abstract:
Present disclosure relates to a heater block including a plurality of heating lamps mounted on one surface thereof facing an object to be processed, e.g., a substrate and a substrate processing apparatus including the same. The heating lamp includes a first lamp configured to irradiate ultraviolet (UV) rays to the object to be processed and a second lamp configured to irradiate infrared (IR) rays to the object to be processed. A relative ratio of the number of first lamp to the number of second lamp is different for each of a plurality of areas on the one surface. Provided are the heater block that may thermally compensate a temperature of an edge area of the substrate to increase temperature uniformity of the substrate and the substrate processing apparatus.