公开(公告)号：US20180148833A1

公开(公告)日：2018-05-31

申请号：US15800266

申请日：2017-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sukti CHATTERJEE ,  LANCE SCUDDER ,  ERIC H. LIU ,  PRAVIN K. NARWANKAR ,  PRAMIT MANNA ,  ABHIJIT MALLICK

IPC: C23C16/448 ,  H01L21/02 ,  C23C16/24 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a silicon containing precursor gas into the processing volume, the silicon containing precursor gas is provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-silicon bonds within molecules of the silicon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable silicon containing layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of wires disposed within the processing volume above the substrate and the inlet.

公开(公告)号：US20180148832A1

公开(公告)日：2018-05-31

申请号：US15800249

申请日：2017-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sukti CHATTERJEE ,  LANCE SCUDDER ,  ERIC H. LIU ,  PRAVIN K. NARWANKAR ,  PRAMIT MANNA ,  ABHIJIT MALLICK

IPC: C23C16/26 ,  C23C16/48 ,  H01L21/02

CPC classification number: C23C16/26 ,  C23C16/448 ,  C23C16/48 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/02348

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a carbon containing precursor gas into the processing volume, the carbon containing precursor gas being provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-carbon bonds within molecules of the carbon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable carbon layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of filaments disposed within the processing volume above the substrate and the inlet.

公开(公告)号：US20150194317A1

公开(公告)日：2015-07-09

申请号：US14574928

申请日：2014-12-18

Applicant: Applied Materials, Inc.

Inventor： PRAMIT MANNA ,  Abhijit Basu MALLICK ,  Ludovic GODET ,  Yongmei CHEN ,  Jun XUE ,  Mukund SRINIVASAN ,  Ellie Y. YIEH ,  Srinivas D. NEMANI

IPC: H01L21/308 ,  H01L27/115 ,  H01L27/108

CPC classification number: H01L21/3086 ,  H01L21/31144 ,  H01L21/31155

Abstract: Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.

Abstract translation: 本文描述的实施例提供了形成蚀刻选择性硬掩模的方法。 非晶碳硬掩模被植入各种掺杂剂以增加硬掩模的硬度和密度。 无定形碳硬掩模的离子注入还保持或减少硬掩模的内部应力。 蚀刻选择性硬掩模通常提供高级NAND和DRAM器件中的改进的图案化。