公开(公告)号：US20160226070A1

公开(公告)日：2016-08-04

申请号：US14997690

申请日：2016-01-18

Applicant: Applied Materials, Inc.

Inventor： SERGEY D. LOPATIN ,  DIMITRI A. BREVNOV ,  ERIC H. LIU ,  ROBERT Z. BACHRACH ,  CONNIE P. WANG

IPC: H01M4/62 ,  H01M4/66 ,  H01M10/0525 ,  H01M4/1395 ,  H01M4/587 ,  H01M4/36 ,  H01M4/04 ,  H01M4/38 ,  H01M4/134

CPC classification number: H01M4/626 ,  H01M4/02 ,  H01M4/0404 ,  H01M4/0419 ,  H01M4/0452 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/364 ,  H01M4/366 ,  H01M4/38 ,  H01M4/386 ,  H01M4/587 ,  H01M4/625 ,  H01M4/64 ,  H01M4/661 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027 ,  Y02E60/122 ,  Y02P70/54

Abstract: High capacity energy storage devices and energy storage device components, and more specifically, to a system and method for fabricating such high capacity energy storage devices and storage device components using processes that form three-dimensional porous structures are provided. In one embodiment, an anode structure for use in a high capacity energy storage device, comprising a conductive collector substrate, a three-dimensional copper-tin-iron porous conductive matrix formed on one or more surfaces of the conductive collector substrate, comprising a plurality of meso-porous structures formed over the conductive current collector, and an anodically active material deposited over the three-dimensional copper-tin-iron porous conductive matrix is provided. In certain embodiments, the three-dimensional copper-tin-iron porous conductive matrix further comprises a plurality of columnar projections formed on the conductive current collector with the plurality of meso-porous structure formed on the plurality of columnar projections.

Abstract translation: 更具体地，涉及一种使用形成三维多孔结构的工艺来制造这种高容量能量存储装置和存储装置部件的系统和方法。 在一个实施例中，一种用于高容量能量存储装置的阳极结构，包括导电收集器基板，形成在导电集电基板的一个或多个表面上的三维铜 - 锡 - 铁多孔导电基体，包括多个 提供了形成在导电集电器上的中孔多孔结构，以及沉积在三维铜 - 锡 - 铁多孔导电基体上的阳极活性材料。 在某些实施例中，三维铜 - 锡 - 铁多孔导电基体还包括形成在导电集电器上的多个柱状突起，其中多个中孔多孔结构形成在多个柱状突起上。

公开(公告)号：US20180148833A1

公开(公告)日：2018-05-31

申请号：US15800266

申请日：2017-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sukti CHATTERJEE ,  LANCE SCUDDER ,  ERIC H. LIU ,  PRAVIN K. NARWANKAR ,  PRAMIT MANNA ,  ABHIJIT MALLICK

IPC: C23C16/448 ,  H01L21/02 ,  C23C16/24 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/56 ,  C23C16/52

CPC classification number: C23C16/448 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02664

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a silicon containing precursor gas into the processing volume, the silicon containing precursor gas is provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-silicon bonds within molecules of the silicon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable silicon containing layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of wires disposed within the processing volume above the substrate and the inlet.

公开(公告)号：US20180148832A1

公开(公告)日：2018-05-31

申请号：US15800249

申请日：2017-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sukti CHATTERJEE ,  LANCE SCUDDER ,  ERIC H. LIU ,  PRAVIN K. NARWANKAR ,  PRAMIT MANNA ,  ABHIJIT MALLICK

IPC: C23C16/26 ,  C23C16/48 ,  H01L21/02

CPC classification number: C23C16/26 ,  C23C16/448 ,  C23C16/48 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/02277 ,  H01L21/02337 ,  H01L21/02348

Abstract: In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a carbon containing precursor gas into the processing volume, the carbon containing precursor gas being provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-carbon bonds within molecules of the carbon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable carbon layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of filaments disposed within the processing volume above the substrate and the inlet.