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    Semiconductor device package and method of manufacturing the same
    1.
    发明授权
    Semiconductor device package and method of manufacturing the same 有权

    公开(公告)号：US11362052B2

    公开(公告)日：2022-06-14

    申请号：US16732071

    申请日：2019-12-31

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Chi-Chang Lee ,  Wen-Long Lu

    IPC: H01L23/00 ,  H01L23/31 ,  H01L25/065

    Abstract: A semiconductor device package includes a first electronic component having a first surface and a second surface opposite the first surface. The semiconductor device package further includes a first pad disposed on the first surface of the first electronic component. The first pad has a first surface facing away from the first surface of the first electronic component, a second surface opposite the first surface of the first pad, and a lateral surface extended between the first surface of the first pad and the second surface of the first pad. The semiconductor device package further includes a second pad disposed on the first surface of the first pad. The second pad has a first surface facing away from the first surface of the first pad, a second surface opposite the first surface of the second pad, and a lateral surface extended between the first surface of the second pad and the second surface of the second pad. A width of the first surface of the second pad is greater than a width of the second surface of the second pad. A method of manufacturing a semiconductor device package is also disclosed.

    Capacitor structure
    2.
    发明授权
    Capacitor structure 有权

    公开(公告)号：US10381161B2

    公开(公告)日：2019-08-13

    申请号：US15804463

    申请日：2017-11-06

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Chi-Chang Lee ,  Wen-Long Lu

    IPC: H01G4/30 ,  H01G4/228 ,  H01G4/06 ,  H01G4/012 ,  H01G4/008 ,  H01G4/10

    Abstract: A capacitor structure includes a first conductive layer, a first insulation layer, a first dielectric layer and a second conductive layer. The first conductive layer includes a first conductive material. The first insulation layer is disposed adjacent to the first conductive layer in a same plane as the first conductive layer. The first dielectric layer is on the first conductive layer and the first insulation layer. The second conductive layer is on the first dielectric layer and includes a second conductive material. The first conductive material is different from the second conductive material.

    Capacitor structures
    3.
    发明授权
    Capacitor structures 有权

    公开(公告)号：US10446325B2

    公开(公告)日：2019-10-15

    申请号：US15721263

    申请日：2017-09-29

    Applicant: Advanced Semiconductor Engineering, Inc.

    Inventor： Wen-Long Lu ,  Chi-Chang Lee

    IPC: H01G4/33 ,  H01G4/228 ,  H01G4/12 ,  H01G4/38 ,  H01G4/012 ,  H01G4/224 ,  H01L27/01 ,  H01L49/02

    Abstract: A capacitor structure is disclosed. The capacitor structure includes a substrate, and a first electrode disposed on the substrate, the first electrode including a conductive layer, a first conductive post electrically connected to the conductive layer and a second conductive post electrically connected to the conductive layer. The capacitor structure further includes a planarization layer disposed on and covering the first electrode, the planarization layer disposed in a space between the first conductive post and the second conductive post, a first dielectric layer disposed on the planarization layer and in the space between the first conductive post and the second conductive post, and a second electrode disposed on the first dielectric layer.

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