Liquid crystal display
    4.
    发明授权

    公开(公告)号:US10754212B2

    公开(公告)日:2020-08-25

    申请号:US16041667

    申请日:2018-07-20

    Applicant: Apple Inc.

    Abstract: A display may have pixels configured to display images. The pixels may be formed from thin-film transistor circuitry on a substrate. Color filter elements formed from colored polymer such as colored photoimageable polymer may be formed on the substrate. A black matrix formed from black photoimageable polymer may have an array of openings. The colored polymer may have first portions that overlap the black matrix and second portions in the openings that form the color filter elements. In some portions of the pixels, the thin-film transistor circuitry may be interposed between the first portions of the colored polymer and the black matrix. In other portions of the pixels, data lines may be formed that are overlapped by the black matrix and that are interposed between the first portions of the colored polymer and the black matrix.

    Electronic device with reduced-stress flexible display
    7.
    发明授权
    Electronic device with reduced-stress flexible display 有权
    电子设备具有减轻应力灵活显示

    公开(公告)号:US09516743B2

    公开(公告)日:2016-12-06

    申请号:US13778932

    申请日:2013-02-27

    Applicant: Apple Inc.

    Abstract: An electronic device may have a flexible display. The display may have portions that are bent along a bend axis. The display may have display circuitry such as an array of display pixels in an active area and signal lines, thin-film transistor support circuitry and other display circuitry in an inactive area of the display surrounding the active area. The display circuitry may be formed on a substrate such as a flexible polymer substrate. The flexible polymer substrate may be formed by depositing polymer on a support structure that has raised portions. The raised portions may create locally thinned regions in the flexible polymer substrate. The reduced thickness of the flexible polymer substrate in the thinned regions may help ensure that a neutral stress plane that is associated with bending the display along the bend axis is aligned with the display circuitry, thereby minimizing stress in the display circuitry.

    Abstract translation: 电子设备可以具有灵活的显示器。 显示器可以具有沿着弯曲轴线弯曲的部分。 显示器可以具有诸如有源区域中的显示像素阵列和信号线,薄膜晶体管支持电路和围绕有源区域的显示器的无效区域中的其他显示电路的显示电路。 显示电路可以形成在诸如柔性聚合物基底的基底上。 柔性聚合物基材可以通过将聚合物沉积在具有凸起部分的支撑结构上而形成。 凸起部分可以在柔性聚合物基底中产生局部变薄的区域。 柔性聚合物基材在减薄区域中的减小的厚度可以有助于确保与显示器沿着弯曲轴弯曲相关联的中性应力平面与显示电路对准,从而使显示电路中的应力最小化。

    Displays With Opaque Borders
    8.
    发明申请
    Displays With Opaque Borders 有权
    显示不透明边框

    公开(公告)号:US20150338699A1

    公开(公告)日:2015-11-26

    申请号:US14711217

    申请日:2015-05-13

    Applicant: Apple Inc.

    Abstract: A display may have an active area surrounded by an inactive border area. The display may be a liquid crystal display having a liquid crystal layer sandwiched between a color filter layer and a thin-film transistor layer. An upper polarizer may have a polarized central region that overlaps the active area of the display. The upper polarizer may also have an unpolarized portion in the inactive border area overlapping the border structures. The border structures may include colored material such as a white layer on the inner surface of the thin-film transistor layer. Binary information may be embedded into an array of programmable resonant circuits. The binary information may be a display identifier or other information associated with a display. The programmable resonant circuits may be tank circuits with adjustable capacitors, fuses, or other programmable components.

    Abstract translation: 显示器可以具有被非活动边界区域包围的活动区域。 显示器可以是具有夹在滤色器层和薄膜晶体管层之间的液晶层的液晶显示器。 上偏振器可以具有与显示器的有效区域重叠的偏振中心区域。 上偏振器还可以在非边界区域中具有与边界结构重叠的非偏振部分。 边界结构可以在薄膜晶体管层的内表面上包括诸如白色层的着色材料。 二进制信息可嵌入到可编程谐振电路阵列中。 二进制信息可以是与显示器相关联的显示标识符或其他信息。 可编程谐振电路可以是具有可调电容器,保险丝或其他可编程元件的储能电路。

    Protection layer for halftone process of third metal
    9.
    发明授权
    Protection layer for halftone process of third metal 有权
    第三金属半色调处理保护层

    公开(公告)号:US08999771B2

    公开(公告)日:2015-04-07

    申请号:US13631385

    申请日:2012-09-28

    Applicant: Apple Inc.

    Abstract: A thin-film transistor having a protection layer for a planarization layer. The protection layer prevents reduction of the planarization layer during an ashing process, thereby preventing the formation of a steeply tapered via hole through the planarization layer. In this manner, the via hole may be coated with a conductive element that may serve as a conductive path between a common electrode and the drain of the transistor.

    Abstract translation: 一种具有用于平坦化层的保护层的薄膜晶体管。 保护层防止灰化过程中平坦化层的减少,从而防止形成通过平坦化层的急剧变细的通孔。 以这种方式,通孔可以涂覆有可以用作公共电极和晶体管的漏极之间的导电路径的导电元件。

    Back Channel Etching Oxide Thin Film Transistor Process Architecture
    10.
    发明申请
    Back Channel Etching Oxide Thin Film Transistor Process Architecture 审中-公开
    背沟道蚀刻氧化物薄膜晶体管工艺架构

    公开(公告)号:US20140120657A1

    公开(公告)日:2014-05-01

    申请号:US13664240

    申请日:2012-10-30

    Applicant: APPLE INC.

    CPC classification number: H01L29/7869 H01L29/66969 H01L29/78606

    Abstract: A method is provided for fabricating a back channel etching (BCE) oxide thin film transistor (TFT) for a liquid crystal display. The method includes forming a first metal layer having a first portion and a second portion over a substrate, depositing a gate insulator over the first metal layer, and disposing a semiconductor layer over the gate insulator. The method also includes depositing a half-tone photoresist to cover a first portion of the semiconductor layer and the first portion of the first metal layer. The half-tone photoresist has a first portion and a second portion thicker than the first portion. The first portion has a via hole above the second portion of the first metal layer. The second portion of the half-tone photoresist covers the first portion of the first metal layer. The method further includes etching a portion of the gate insulator through the via hole such that the second portion of the first metal layer is exposed, removing the first portion of the half-tone photoresist while remaining the second portion of the half-tone photoresist, and etching to remove a second portion of the semiconductor layer that is not covered by the half-tone photoresist.

    Abstract translation: 提供了一种用于制造用于液晶显示器的背沟道蚀刻(BCE)氧化物薄膜晶体管(TFT)的方法。 该方法包括在衬底上形成具有第一部分和第二部分的第一金属层,在第一金属层上沉积栅极绝缘体,以及在栅极绝缘体上方设置半导体层。 该方法还包括沉积半色调光致抗蚀剂以覆盖半导体层的第一部分和第一金属层的第一部分。 半色调光致抗蚀剂具有比第一部分厚的第一部分和第二部分。 第一部分在第一金属层的第二部分上方具有通孔。 半色调光刻胶的第二部分覆盖第一金属层的第一部分。 该方法还包括通过通孔蚀刻栅极绝缘体的一部分,使第一金属层的第二部分露出,除去半色调光致抗蚀剂的第一部分,同时保留半色调光致抗蚀剂的第二部分, 并且蚀刻以除去未被半色调光致抗蚀剂覆盖的半导体层的第二部分。

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