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    ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING
    3.
    发明申请
    ENDPOINT CONTROL OF MULTIPLE SUBSTRATES OF VARYING THICKNESS ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
    在化学机械抛光中相同板上变化厚度的多个基板的端点控制

    公开(公告)号：US20140222188A1

    公开(公告)日：2014-08-07

    申请号：US14246801

    申请日：2014-04-07

    Applicant: Applied Materials, Inc.

    Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

    IPC: G06F17/50

    CPC classification number: B24B37/013 ,  B24B37/042 ,  B65B1/366 ,  G06F17/5086 ,  H01L21/30625 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

    Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

    Abstract translation: 第一衬底的第一预期所需抛光时间与第二衬底的第二预期所需抛光时间之间的差异使用在线计量站测量的第一预抛光厚度和第二预抛光厚度来确定。 基于第一预期所需抛光时间和第二预期所需抛光时间之间的差来确定初始周期的持续时间。 在抛光操作开始时的初始阶段，对于第一基板和第二基板中的任一个具有较少预期的所需抛光时间，而对第一基板和第二基板中的哪一个施加压力同时施加压力 更大的预期需要的抛光时间。 在初始周期之后，对第一基板和第二基板施加压力。

    Transfer chamber metrology for improved device yield
    4.
    发明授权
    Transfer chamber metrology for improved device yield 有权

    公开(公告)号：US10103288B2

    公开(公告)日：2018-10-16

    申请号：US14726253

    申请日：2015-05-29

    Applicant: Applied Materials, Inc.

    Inventor： David P. Bour ,  Alain Duboust ,  Alexey Goder

    IPC: H01L33/00 ,  G01K11/20 ,  H01L21/67 ,  H01L21/66 ,  C30B25/16 ,  C30B29/40 ,  H01L33/06 ,  H01L33/32 ,  H01L21/02

    Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

    TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD
    5.
    发明申请
    TRANSFER CHAMBER METROLOGY FOR IMPROVED DEVICE YIELD 审中-公开
    用于改进设备输出的转换室规格

    公开(公告)号：US20150263222A1

    公开(公告)日：2015-09-17

    申请号：US14726253

    申请日：2015-05-29

    Applicant: Applied Materials, Inc.

    Inventor： David P. Bour ,  Alain Duboust ,  Alexey Goder

    IPC: H01L33/00 ,  G01K11/20 ,  H01L33/06 ,  H01L33/32 ,  C30B25/16 ,  C30B29/40

    CPC classification number: H01L33/0075 ,  C30B25/16 ,  C30B29/40 ,  G01K11/20 ,  G01K2217/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/67196 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/26 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

    Abstract: Apparatus and method for control of epitaxial growth parameters, for example during manufacture of light emitting diodes (LEDs). Embodiments include PL measurement of a group III-V film following growth while a substrate at an elevated temperature is in a transfer chamber of a multi-chamber cluster tool. In other embodiments, a film thickness measurement, a contactless resistivity measurement, and a particle and/or roughness measure is performed while the substrate is disposed in the transfer chamber. One or more of the measurements performed in the transfer chamber are temperature corrected to room temperature by estimating the elevated temperature based on emission from a GaN base layer disposed below the group III-V film. In other embodiments, temperature correction is based on an absorbance band edge of the GaN base layer determined from collected white light reflectance spectra. Temperature corrected metrology is then used to control growth processes.

    Abstract translation: 用于控制外延生长参数的设备和方法，例如在制造发光二极管（LED）期间。 实施例包括生长后的III-V族薄膜的PL测量，而在高温下的基底处于多腔聚集工具的转移室中。 在其它实施例中，在衬底设置在传送室中的同时，执行膜厚度测量，非接触电阻率测量以及颗粒和/或粗糙度测量。 通过基于从设置在III-V族III膜以下的GaN基底层的发射来估计升高的温度，在传送室中执行的一个或多个测量值被温度校正到室温。 在其他实施例中，温度校正基于由所收集的白光反射光谱确定的GaN基底层的吸收带边缘。 然后使用温度校正计量来控制生长过程。

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