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公开(公告)号:US12077860B2
公开(公告)日:2024-09-03
申请号:US17366832
申请日:2021-07-02
Applicant: Applied Materials, Inc.
Inventor: Andrew Ceballos , Ludovic Godet , Karl J. Armstrong , Rami Hourani
IPC: G02B1/10 , C23C16/455 , C23C16/56
CPC classification number: C23C16/45563 , C23C16/56 , G02B1/10
Abstract: Embodiments of the present disclosure generally relate to methods and materials for optical device fabrication. More specifically, embodiments described herein provide for optical film deposition methods and materials to expand the process window for amorphous optical film deposition via incorporation of dopant atoms by suppressing the crystal growth of optical materials during deposition. By enabling amorphous films to be deposited at higher temperatures, significant cost savings and increased throughput are possible.
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公开(公告)号:US11976351B2
公开(公告)日:2024-05-07
申请号:US17692465
申请日:2022-03-11
Applicant: Applied Materials, Inc.
Inventor: Kenichi Ohno , Andrew Ceballos , Karl J. Armstrong , Takashi Kuratomi , Rami Hourani , Ludovic Godet
CPC classification number: C23C14/083 , C03C17/2456 , C23C14/35 , C23C14/54 , G02B1/10 , G02B1/041
Abstract: An optical device is provided. The optical device includes an optical device substrate having a first surface; and an optical device film disposed over the first surface of the optical device substrate. The optical device film is formed of titanium oxide. The titanium oxide is selected from the group of titanium(IV) oxide (TiO2), titanium monoxide (TiO), dititanium trioxide (Ti2O3), Ti3O, Ti2O, δ-TiOx, where x is 0.68 to 0.75, and TinO2n-1, where n is 3 to 9, the optical device film has a refractive index greater than 2.72 at a 520 nanometer (nm) wavelength, and a rutile phase of the titanium oxide comprises greater than 94 percent of the optical device film.
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公开(公告)号:US11868043B2
公开(公告)日:2024-01-09
申请号:US17527819
申请日:2021-11-16
Applicant: Applied Materials, Inc.
Inventor: Amita Joshi , Andrew Ceballos , Kenichi Ohno , Rami Hourani , Ludovic Godet
CPC classification number: G03F7/0002 , C09D7/62 , C09D7/65 , C09D7/67 , G03F7/167
Abstract: Embodiments of the present disclosure generally relate to imprint compositions and materials and related processes useful for nanoimprint lithography (NIL). In one or more embodiments, an imprint composition is provided and contains a plurality of passivated nanoparticles, one or more solvents, a surface ligand, an additive, and an acrylate. Each passivated nanoparticle contains a core and one or more shells, where the core contains one or more metal oxides and the shell contains one or more passivation materials. The passivation material of the shell contains one or more atomic layer deposition (ALD) materials, one or more block copolymers, or one or more silicon-containing compounds.
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公开(公告)号:US12242186B2
公开(公告)日:2025-03-04
申请号:US18394133
申请日:2023-12-22
Applicant: Applied Materials, Inc.
Inventor: Andrew Ceballos , Rami Hourani , Kenichi Ohno , Yuriy Melnik , Amita Joshi
Abstract: Embodiments of the present disclosure generally relate to densified nanoimprint films and processes for making these densified nanoimprint films, as well as optical devices containing the densified nanoimprint films. In one or more embodiments, a densified nanoimprint film contains a base nanoimprint film and a metal oxide disposed on the base nanoimprint film and in between the nanoparticles. The base nanoimprint film contains nanoparticles, where the nanoparticles contain titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, indium tin oxide, silicon nitride, or any combination thereof. The metal oxide contains aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, indium oxide, indium tin oxide, hafnium oxide, chromium oxide, scandium oxide, tin oxide, zinc oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon oxide, silicon nitride, silicon oxynitride, or any combination thereof.
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公开(公告)号:US11892771B2
公开(公告)日:2024-02-06
申请号:US17136959
申请日:2020-12-29
Applicant: Applied Materials, Inc.
Inventor: Andrew Ceballos , Rami Hourani , Kenichi Ohno , Yuriy Melnik , Amita Joshi
CPC classification number: G03F7/0002 , C23C16/045 , C23C16/45527 , C23C16/45553 , G03F7/0005 , G03F7/2004 , H01L21/28123 , B82Y10/00
Abstract: Embodiments of the present disclosure generally relate to densified nanoimprint films and processes for making these densified nanoimprint films, as well as optical devices containing the densified nanoimprint films. In one or more embodiments, a densified nanoimprint film contains a base nanoimprint film and a metal oxide disposed on the base nanoimprint film and in between the nanoparticles. The base nanoimprint film contains nanoparticles, where the nanoparticles contain titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, hafnium oxide, chromium oxide, indium tin oxide, silicon nitride, or any combination thereof. The metal oxide contains aluminum oxide, titanium oxide, zirconium oxide, niobium oxide, tantalum oxide, indium oxide, indium tin oxide, hafnium oxide, chromium oxide, scandium oxide, tin oxide, zinc oxide, yttrium oxide, praseodymium oxide, magnesium oxide, silicon oxide, silicon nitride, silicon oxynitride, or any combination thereof.
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公开(公告)号:US11976002B2
公开(公告)日:2024-05-07
申请号:US17141813
申请日:2021-01-05
Applicant: Applied Materials, Inc.
Inventor: Alexia Adilene Portillo Rivera , Andrew Ceballos , Kenichi Ohno , Rami Hourani , Karl J. Armstrong , Brian Alexander Cohen
CPC classification number: C03C17/3615 , C03C17/3626 , C03C17/3642 , C03C17/3644 , C03C17/3663 , C23C14/0652 , C23C14/08 , C23C14/18 , C23C14/3407 , C03C2218/154
Abstract: Embodiments of the present disclosure generally relate to encapsulated optical devices and methods for fabricating the encapsulated optical devices. In one or more embodiments, a method for encapsulating an optical device includes depositing a metallic silver layer on a substrate, depositing a barrier layer on the metallic silver layer, where the barrier layer contains silicon nitride, a metallic element, a metal nitride, or any combination thereof, and depositing an encapsulation layer containing silicon oxide on the barrier layer.
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