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公开(公告)号：US20190244754A1
公开(公告)日：2019-08-08
申请号：US16386651
申请日：2019-04-17
发明人： Yujie YANG , Tongwen ZHANG , Wei XIA , Peijun DING , Hougong WANG
CPC分类号： H01F41/183 , C23C14/351 , C23C14/564 , H01F7/02 , H01F41/14 , H01F41/22 , H01J37/3435 , H01J37/3452
摘要： The present disclosure provides a magnetic thin film deposition chamber and a thin film deposition apparatus. The magnetic thin film deposition chamber includes a main chamber and a bias magnetic field device. A base pedestal is disposed in the main chamber for carrying a to-be-processed workpiece. The bias magnetic field device is configured for forming a horizontal magnetic field above the base pedestal, and the horizontal magnetic field is used to provide an in-plane anisotropy to a magnetized film layer deposited on the to-be-processed workpiece. The thin film deposition chamber provided in present disclosure is capable of forming a horizontal magnetic field above the base pedestal that is sufficient to induce an in-plane anisotropy to the magnetic thin film.
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2.发明申请公开(公告)号：US20190244736A1
公开(公告)日：2019-08-08
申请号：US16386750
申请日：2019-04-17
发明人： Yujie YANG , Peijun DING , Tongwen ZHANG , Wei XIA , Hougong WANG
CPC分类号： H01F3/02 , H01F10/14 , H01F10/30 , H01F17/04 , H01F27/263 , H01F41/0206 , H01F41/14 , H01F41/18 , H01F41/32
摘要： A deposition method includes depositing an adhesive layer on a workpiece to be processed and depositing a magnetic/isolated unit, where the magnetic/isolation unit includes at least one pair of a magnetic film layer and an isolation layer that are alternately disposed. The deposition method of the magnetic thin film laminated structure, the magnetic thin film laminated structure and the micro-inductive device provided by the disclosure can increase a total thickness of the magnetic thin film laminated structure, thereby broadening the application frequency range of the inductive device fabricated thereby.
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公开(公告)号：US20190221454A1
公开(公告)日：2019-07-18
申请号：US16364985
申请日：2019-03-26
发明人： Qiang JIA , Peijun DING , Mengxin ZHAO , Hougong WANG
IPC分类号： H01L21/67 , C23C14/22 , H01L21/324
CPC分类号： H01L21/67098 , C23C14/22 , C23C14/228 , H01L21/324 , H01L21/67
摘要： A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.
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公开(公告)号：US20190259628A1
公开(公告)日：2019-08-22
申请号：US16400659
申请日：2019-05-01
发明人： Zhimin BAI , Qiang LI , Bin DENG , Yuchun DENG , Hougong WANG , Peijun DING
IPC分类号： H01L21/324 , H01L21/67
摘要： A method includes maintaining a pressure in the process chamber at a threshold before and after a wafer is transferred into the process chamber and during the annealing process of the wafer. Not only the temperature fluctuation caused by the turbulent flow of the gas during the annealing process of the wafer can be avoided, but also the time for the temperature in the chamber to recover and stabilize can be shortened, thereby improving the equipment productivity.
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公开(公告)号：US20230298789A1
公开(公告)日：2023-09-21
申请号：US18324705
申请日：2023-05-26
发明人： Yujie YANG , Peijun DING , Tongwen ZHANG , Wei XIA , Hougong WANG
IPC分类号： H01F3/02 , H01F41/18 , H01F41/32 , H01F10/30 , H01F17/04 , H01F27/26 , H01F41/02 , H01F41/14
CPC分类号： H01F3/02 , H01F41/18 , H01F41/32 , H01F10/30 , H01F17/04 , H01F27/263 , H01F41/0206 , H01F41/14 , H01F10/14
摘要： A magnetic thin film laminated structure includes a first layer structure and a second layer structure stacked on the first layer structure. The first layer structure includes an adhesive layer on a substance, the adhesive layer being made of a material having compressive stress, at least one pair of layers on the adhesive layer, each pair of the at least one pair of layers including a magnetic film layer and an isolation layer, and an additional magnetic film layer on the at least one pair of layers. The second layer structure includes another adhesive layer on the first layer structure, another at least one pair of layers on the another adhesive layer, each pair of the another at least one pair of layers including a magnetic film layer and an isolation layer, and another additional magnetic film layer on the another at least one pair of layers.
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公开(公告)号：US20190218660A1
公开(公告)日：2019-07-18
申请号：US16366392
申请日：2019-03-27
发明人： Hua YE , Qiang JIA , Yue XU , Bingxuan JIANG , Jue HOU , Pu SHI , Jinguo ZHENG , Lingbei ZONG , Mengxin ZHAO , Peijun DING , Hougong WANG
CPC分类号： C23C14/564 , C23C14/56 , F26B3/30 , F26B5/042 , H01L21/02063 , H01L21/67 , H01L21/76814 , H01L21/76843 , H01L21/76877 , H01L23/53238
摘要： The present disclosure provides a degassing method, a degassing chamber, and a semiconductor processing apparatus. The degassing method includes heating a degassing chamber to provide an internal temperature at a preset temperature, and maintaining the internal temperature of the degassing chamber at the preset temperature; and transferring substrates to be degassed into the degassing chamber and heating the substrates for a preset period of time, and taking the substrates out after the preset period of time of the heating. The disclosed degassing method is able to improve the temperature uniformity not only for a same batch of substrates but also for different batches of substrates. In addition, the disclosed degassing method can also realize anytime instant loading/unloading of the substrates to be degassed, thereby increasing the productivity of the equipment.
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公开(公告)号：US20170330769A1
公开(公告)日：2017-11-16
申请号：US15529709
申请日：2015-11-25
发明人： Qing SHE , Peng CHEN , Mengxin ZHAO , Peijun DING , Kui XU , Guodong BIAN
CPC分类号： H01L21/67028 , B08B7/0035 , C23C16/0245 , H01J37/32082 , H01J37/321 , H01J37/32458 , H01J37/32513 , H01J37/32651 , H01J37/32834 , H01J37/32853 , H01J37/32862 , H01J2237/334 , H01L21/02046 , H01L21/67069
摘要： A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21′) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21′) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24). The precleaning chamber (100, 200, 300) not only shortens the gas inlet path of the process gas, but also reach a desired plasma density under the conditions where a relatively small amount of process gas is introduced, thereby reducing the usage cost.
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