公开(公告)号：US10205026B2

公开(公告)日：2019-02-12

申请号：US15533336

申请日：2016-05-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui Tian

IPC: H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786 ,  H01L21/283 ,  H01L29/40 ,  H01L21/28 ,  H01L29/423

Abstract: A thin film transistor includes a substrate, and, a source electrode, a drain electrode, a gate, a gate insulation layer and an active layer disposed on the substrate; the gate insulation layer is located between the gate and the active layer, and the source electrode and the drain electrode are connected to the active layer, respectively; and the gate is a composite metal layer including at least one first metal layer which contains doped ions therein and which is close to the gate insulation layer, and at least one second metal layer which is apart from the gate insulation layer and is not doped with ions.

公开(公告)号：US20180239034A1

公开(公告)日：2018-08-23

申请号：US15550510

申请日：2016-08-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui Tian

IPC: G01T1/20

CPC classification number: G01T1/2002 ,  G01T1/2018

Abstract: The present application discloses a radiation detector having a plurality of pixels. The radiation detector includes a base substrate; a thin film transistor on the base substrate; a scintillator layer on a side of the thin film transistor distal to the base substrate for converting radiation into light; and a photosensor on a side of the thin film transistor distal to the base substrate and proximal to the scintillator layer for converting light to electrical charges. The photosensor and the thin film transistor are in two different vertically stacked layers of a vertically stacked multi-layer structure. The photosensor includes a photoelectric conversion layer optically coupled to the scintillator layer.

公开(公告)号：US09882057B2

公开(公告)日：2018-01-30

申请号：US14435538

申请日：2014-08-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui Tian

IPC: H01L27/14 ,  H01L29/786 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/28 ,  H01L21/30 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78675 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L21/02675 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/28158 ,  H01L21/3003 ,  H01L27/1222 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78618

Abstract: A low temperature poly-silicon thin film transistor and its manufacturing method, an array substrate and a display device are provided. The method comprises: forming a poly-silicon film on a base substrate (1) and patterning the poly-silicon film to form an active layer (3); forming a gate insulation layer (4) on the active layer (3) and performing hydrogenation process to the gate insulation layer (4) and the active layer (3). By this method, the diffusion distance of hydrogen is largely shortened, the time for the hydrogenation process is reduced, and thus the process cost for the thin film transistor is largely lowered down.

公开(公告)号：US20150168138A1

公开(公告)日：2015-06-18

申请号：US14376790

申请日：2013-11-19

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui Tian

IPC: G01B15/02 ,  G01Q60/24

CPC classification number: G01B15/02 ,  G01Q60/24 ,  G03F7/20 ,  H01L21/266

Abstract: A method of testing a blocking ability of a photoresist blocking layer for ion implantation, comprising: forming a photoresist blocking layer (S1) on a substrate; measuring a first thickness (S2) of the photoresist blocking layer at an arbitrary position on the substrate, the first thickness being a thickness of the photoresist blocking layer; implanting a predetermined amount of ions (S3) into the photoresist blocking layer; measuring a second thickness (S4) of the photoresist blocking layer at the arbitrary position, the second thickness being a thickness of a hardened portion in the photoresist blocking layer; and determining a blocking ability (S5) of the photoresist blocking layer with the first thickness for ion implantation according to the second thickness. This method does not need to use a testing silicon slice during the process of testing the blocking ability of a photoresist blocking layer for ion implantation, and thus can reduce required costs during the testing process.

Abstract translation: 一种测试用于离子注入的光致抗蚀剂阻挡层的阻挡能力的方法，包括：在基底上形成光刻胶阻挡层（S1）; 测量所述光刻胶阻挡层在所述基板上的任意位置的第一厚度（S2），所述第一厚度为所述光致抗蚀剂阻挡层的厚度; 将预定量的离子（S3）注入到光刻胶阻挡层中; 测量任意位置处的光致抗蚀剂阻挡层的第二厚度（S4），第二厚度是光致抗蚀剂阻挡层中的硬化部分的厚度; 以及根据第二厚度确定具有用于离子注入的第一厚度的光致抗蚀剂阻挡层的阻挡能力（S5）。 在测试用于离子注入的光致抗蚀剂阻挡层的阻挡能力的过程中，该方法不需要使用测试硅片，因此可以在测试过程中降低所需的成本。

公开(公告)号：US11300444B2

公开(公告)日：2022-04-12

申请号：US16066199

申请日：2017-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yongming Shi ,  Zhanjie Ma ,  Hui Tian ,  Chun Wang

IPC: G01J1/16 ,  G01J1/46 ,  G01T1/24 ,  G01J1/44

Abstract: A photoelectric detection circuit and a photoelectric detector are provided. The photoelectric detection circuit includes a first photoelectric sensing element and a second photoelectric sensing element, and an electrical characteristic of the first photoelectric sensing element is substantially identical to an electrical characteristic of the second photoelectric sensing element; the first photoelectric sensing element outputs a first sensed electrical signal, and the second photoelectric sensing element outputs a second sensed electrical signal; a polarity of the first sensed electrical signal is opposite to a polarity of the second sensed electrical signal, and an amplitude value of the first sensed electrical signal is substantially identical to an amplitude value of the second sensed electrical signal.

公开(公告)号：US11237046B2

公开(公告)日：2022-02-01

申请号：US16072373

申请日：2017-12-06

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yongming Shi ,  Zhanjie Ma ,  Hui Tian ,  Chun Wang

IPC: G01J1/42 ,  G01J1/02 ,  G01J1/44 ,  G01J1/46 ,  G01T1/20

Abstract: A photoelectric detection circuit and a photoelectric detector are provided. The photoelectric detection circuit includes a first sub-circuit and a second sub-circuit. The first sub-circuit includes a first photoelectric sensing element, and the second sub-circuit includes a second photoelectric sensing element, and an electrical characteristic of the first photoelectric sensing element is substantially identical to an electrical characteristic of the second photoelectric sensing element, and the second photoelectric sensing element is shielded to prevent light from being incident on the second photoelectric sensing element.

公开(公告)号：US10690786B2

公开(公告)日：2020-06-23

申请号：US15763551

申请日：2017-08-08

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui Tian

IPC: G01T1/20 ,  G01T1/208 ,  H01L27/146 ,  H01L31/0288 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/20 ,  H01L31/0376

Abstract: A X-ray detector includes: a base substrate; a plurality of detection modules disposed on the base substrate, wherein the detection module includes a thin film transistor disposed on the base substrate, an insulating layer with a via hole disposed on the thin film transistor and a photosensitive structure disposed on the insulating layer, a first electrode of the thin film transistor is electrically connected to the photosensitive structure through the via hole on the insulating layer, and the first electrode is a source or a drain electrode of the thin film transistor; and a scintillation layer disposed on the detection module. In the present disclosure, by disposing the photosensitive structure and the TFT in different layers, the photosensitive area of the photosensitive structure is enlarged, and it will not be affected by the TFT.

公开(公告)号：US10274615B2

公开(公告)日：2019-04-30

申请号：US15561760

申请日：2017-04-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiyuan Wang ,  Hui Tian ,  Yanzhao Li

IPC: G01T1/20 ,  G01T1/202 ,  G01T1/208

Abstract: A detection panel and a detection apparatus are provided. The detection panel includes: a cesium iodide scintillator layer, which is not doped with thallium; and a photoelectric detector, which is arranged on a light emission side of the cesium iodide scintillator layer and includes a semiconductor layer; a forbidden band width of a material for forming the semiconductor layer is greater than or equal to 2.3 eV.

公开(公告)号：US20180053858A1

公开(公告)日：2018-02-22

申请号：US15533336

申请日：2016-05-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hui Tian

IPC: H01L29/786 ,  H01L21/28 ,  H01L29/423 ,  H01L29/51 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78603 ,  H01L21/28 ,  H01L21/283 ,  H01L29/40 ,  H01L29/423 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/66477 ,  H01L29/66613 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/78 ,  H01L29/786

Abstract: The present disclosure relates to a thin film transistor and a method of manufacturing the same, and a display device. The thin film transistor comprises a substrate, and, a source electrode, a drain electrode, a gate, a gate insulation layer and an active layer disposed on the substrate; the gate insulation layer is located between the gate and the active layer, and the source electrode and the drain electrode are connected to the active layer, respectively; and the gate is a composite metal layer comprising at least one first metal layer which contains doped ions therein and which is close to the gate insulation layer, and at least one second metal layer which is apart from the gate insulation layer.

公开(公告)号：US20160365528A1

公开(公告)日：2016-12-15

申请号：US14771671

申请日：2014-10-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Hui Tian

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5088 ,  H01L51/5206 ,  H01L51/56

Abstract: This present application discloses an organic light-emitting display device and the production method thereof, and a display apparatus. This organic light-emitting display device comprises an anode, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron injection layer, an electron transport layer and a cathode, wherein a hole buffering layer is provided between the anode and the hole injection layer or between the hole injection layer and the hole transport layer to limit the injection of excess holes into the organic light-emitting layer. This disclosure further discloses an organic light-emitting display device and the production method thereof, and a display apparatus. In this disclosure, the injection of excess holes into an organic light-emitting layer may be effectively limited by adding a polymer as a hole buffering layer between an anode and a hole injection layer or between a hole injection layer and a hole transport layer to achieve the balanced injection of electrons and holes in an organic light-emitting layer. Therefore, while this disclosure improves the properties such as efficiency, brightness, or the like of the organic light-emitting device, it also is possible to effectively reduce the working voltage of the organic light-emitting device and in turn the energy consumption of the organic light-emitting device.

Abstract translation: 本申请公开了一种有机发光显示装置及其制造方法以及显示装置。 该有机发光显示装置包括阳极，空穴注入层，空穴传输层，有机发光层，电子注入层，电子传输层和阴极，其中，空穴注入层 阳极和空穴注入层之间或空穴注入层和空穴传输层之间，以限制将多余的空穴注入有机发光层。 本公开进一步公开了一种有机发光显示装置及其制造方法以及显示装置。 在本公开中，通过在阳极和空穴注入层之间或空穴注入层和空穴传输层之间添加聚合物作为空穴缓冲层，可以有效地限制向有机发光层注入多余的空穴，以实现 在有机发光层中平衡地注入电子和空穴。 因此，虽然本公开改进了有机发光装置的效率，亮度等的特性，但是也可以有效地降低有机发光装置的工作电压，进而降低有机发光装置的能量消耗 有机发光装置。