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公开(公告)号：US20240304631A1
公开(公告)日：2024-09-12
申请号：US18020601
申请日：2022-05-31
发明人： Hongwei TIAN , Yanan NIU , Jing WANG , Ran LI , Xueyan TIAN , Zheng LIU , Libin LIU , Shiming SHI
IPC分类号： H01L27/12 , G06V40/13 , G09G3/3225
CPC分类号： H01L27/1225 , H01L27/127 , G06V40/1318 , G09G3/3225 , G09G2300/0426 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/08
摘要： Provided is a drive backplane. The drive backplane includes: a base substrate and a circuit structure. The circuit structure includes a plurality of first thin film transistors and a plurality of second thin film transistors; wherein a first active layer of the first thin film transistor includes a first oxide layer and a second oxide layer, wherein the second oxide layer is disposed on a side of the first oxide layer away from the base substrate, a mobility of the second oxide layer is lower than a mobility of the first oxide layer, and a source and a drain of the first thin film transistor are connected to the second oxide layer; and a second active layer of the second thin film transistor includes a third oxide layer, wherein a mobility of the third oxide layer is lower than the mobility of the first oxide layer.
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公开(公告)号：US20240222570A1
公开(公告)日：2024-07-04
申请号：US17920811
申请日：2021-11-30
发明人： Yanan NIU , Yan QU , Ming YANG , Jintao PENG , Bin QIN , Wanzhi CHEN
IPC分类号： H01L33/48 , H01L25/075 , H01L33/20 , H01L33/54 , H01L33/62
CPC分类号： H01L33/486 , H01L25/0753 , H01L33/20 , H01L33/54 , H01L33/62 , H01L2933/0066
摘要： A light emitting substrate, a preparation method therefor, and a display device are provided. The light emitting substrate includes a base substrate, a die bonding structure, a light shielding structure and a light emitting chip disposed on the base substrate, wherein the light emitting chip is disposed at a side of the die bonding structure away from the base substrate, the light shielding structure is located at a peripheral side of the light emitting chip, the light emitting substrate further comprises a flux functional layer covering the side of the die bonding structure away from the base substrate, the light shielding structure comprises a shielding material layer and a partition structure, and the flux functional layer is blocked at the partition structure.
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公开(公告)号：US20230111185A1
公开(公告)日：2023-04-13
申请号：US17769937
申请日：2021-05-21
发明人： Shuang SUN , Fangzhen ZHANG , Jing NIU , Yanan NIU , Jintao PENG , Lubin SHI
IPC分类号： H10K59/121 , H01L27/12 , H10K59/131
摘要： The present disclosure provides a display substrate and a display device. The display substrate includes a pixel circuit, and the pixel circuit includes a light-emitting element, a driving circuit and a capacitor circuit. The driving circuit is configured to drive the light-emitting element to emit light; a first terminal of the capacitor circuit is electrically connected to a control terminal of the driving circuit, and a second terminal of the capacitor circuit is electrically connected to a data writing-in node; the capacitor circuit includes at least two capacitors connected in parallel with each other.
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公开(公告)号：US20210375952A1
公开(公告)日：2021-12-02
申请号：US16641372
申请日：2019-05-23
发明人： Hongwei TIAN , Yanan NIU , Meng ZHAO , Lei WANG , Zheng LIU
IPC分类号： H01L27/12
摘要： Embodiments of the present disclosure provide an array substrate including a base substrate, an active layer on the base substrate, a first gate insulating layer on the active layer, a first gate on the first gate insulating layer, and a second gate insulating layer on the first gate. The second gate insulating layer includes a first sub-insulating layer and a second sub-insulating layer disposed in a direction away from the active layer, and a hydrogen content of the first sub-insulating layer is larger than a hydrogen content of the second sub-insulating layer. A method for fabricating the array substrate and a display panel including the array substrate are also provided.
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5.发明申请公开(公告)号：US20210226164A1
公开(公告)日：2021-07-22
申请号：US16770916
申请日：2019-12-04
发明人： Hongwei TIAN , Yanan NIU , Chunyan XIE , Chunyang WANG , Dong LI , Zheng LIU , Ming LIU
摘要： The present disclosure provides an organic light-emitting diode display substrate and a manufacturing method thereof. The manufacturing method includes: sequentially forming a first electrode, a light-emitting layer and a second electrode on a base substrate; forming a protection layer having a first opening on a side of the second electrode distal to the base substrate; and forming a second opening in the second electrode, the second opening being located below the first opening. In the present disclosure, with the protection layer, only a portion of the second electrode below the first opening is removed, so that other portions of the second electrode are prevented from being damaged, thereby eliminating a poor display of the display device.
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公开(公告)号：US20220263047A1
公开(公告)日：2022-08-18
申请号：US17630116
申请日：2021-04-22
发明人： Hongwei TIAN , Yanan NIU , Hejin WANG , Pinfan WANG , Fangxu CAO , Zheng LIU
摘要： Provided are a display substrate, a display device, and a method for manufacturing the display substrate. The display substrate includes: a first inorganic encapsulation layer covering pixels of an island region and covering a signal line of a bridge region, a first organic encapsulation layer covering the first inorganic encapsulation layer, and multiple insulating layers located in the bridge region and between the first inorganic encapsulation layer and a substrate.
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公开(公告)号：US20210225877A1
公开(公告)日：2021-07-22
申请号：US16772272
申请日：2019-12-19
发明人： Yanan NIU , Kuanjun PENG , Jiushi WANG , Zhanfeng CAO , Feng ZHANG , Qi YAO , Wusheng LI , Feng GUAN , Lei CHEN , Jintao PENG , Tingting ZHOU
IPC分类号： H01L27/12
摘要： The present disclosure provides a display substrate and a manufacturing method thereof, and a display device. In the display substrate of the present disclosure, a first transistor comprises a first gate electrode, a first electrode, a second electrode, and a first active layer; and a second transistor comprises a second gate electrode, a third electrode, a fourth electrode, and a second active layers, wherein the first active layer comprises a silicon material, the second active layer comprises an oxide semiconductor material, and wherein the third electrode and the first gate electrode are disposed in the same layer, and the fourth electrode and the first electrode, the second electrodes are disposed in the same layer.
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公开(公告)号：US20210210560A1
公开(公告)日：2021-07-08
申请号：US16766905
申请日：2019-10-18
发明人： Hongwei TIAN , Yanan NIU , Dong LI , Chunyang WANG , Ming LIU , Zheng LIU
IPC分类号： H01L27/32 , H01L29/786 , H01L51/56
摘要： The present disclosure discloses an array substrate with a display area, a manufacturing method thereof, a display panel, and a display device. The array substrate with the display area includes a base substrate, and a thin film transistor structure on a surface of the base substrate. The thin film transistor structure is in the display area, the thin film transistor structure includes at least a source-drain pattern and a planarization pattern. The source-drain pattern and the planarization pattern are on a side of the thin film transistor structure away from the base substrate. A surface of the planarization pattern away from the base substrate and a surface of the source-drain pattern away from the base substrate are substantially in a same plane, the planarization pattern has a first slot, and the source-drain pattern is accommodated in the first slot.
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公开(公告)号：US20200243574A1
公开(公告)日：2020-07-30
申请号：US15764552
申请日：2017-10-13
发明人： Hongwei TIAN , Yanan NIU , Zheng LIU , Yueping ZUO , Xiaowei XU
IPC分类号： H01L27/12
摘要： A flexible display panel, a manufacturing method thereof and a display device are provided. The flexible display panel includes: a flexible substrate and an inorganic insulating layer(s) and an organic insulating layer on the flexible substrate. The inorganic insulating layer(s) is provided with a recess in a region to be bent of the flexible display panel. The organic insulating layer at least covers a surface of the recess, and the flexibility of the organic insulating layer is greater than that of the inorganic insulating layer(s).
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10.发明申请公开(公告)号：US20170004970A1
公开(公告)日：2017-01-05
申请号：US14908678
申请日：2015-07-16
发明人： Yanan NIU , Chao LIU , Zengsheng HE , Lei CHEN , Yujun ZHANG
IPC分类号： H01L21/02 , H01L27/12 , H01L29/786 , H01L21/308 , H01L29/66
CPC分类号： H01L21/02675 , H01L21/02057 , H01L21/02532 , H01L21/02592 , H01L21/02686 , H01L21/3085 , H01L21/3086 , H01L27/1222 , H01L27/1274 , H01L27/1285 , H01L27/1288 , H01L27/1296 , H01L29/66757 , H01L29/786 , H01L29/78675
摘要： A method of manufacturing a low temperature polycrystalline silicon thin film and a thin film transistor, a thin film transistor, a display panel and a display device are provided. The method includes: forming an amorphous silicon thin film (01) on a substrate (1); forming a pattern of a silicon oxide thin film (02) covering the amorphous silicon thin film (01), a thickness of the silicon oxide thin film (02) located at a preset region being larger than that of the silicon oxide thin film (02) located at other regions; and irradiating the silicon oxide thin film (02) by using excimer laser to allow the amorphous silicon thin film (01) forming an initial polycrystalline silicon thin film (04), the initial polycrystalline silicon thin film (04) located at the preset region being a target low temperature polycrystalline silicon thin film (05). The polycrystalline silicon thin film has more uniform crystal size.
摘要翻译： 提供一种制造低温多晶硅薄膜和薄膜晶体管，薄膜晶体管，显示面板和显示装置的方法。 该方法包括：在衬底（1）上形成非晶硅薄膜（01）; 形成覆盖非晶硅薄膜（01）的氧化硅薄膜（02）的图案，位于比氧化硅薄膜（02）的预设区域大的氧化硅薄膜（02）的厚度 ）位于其他地区 通过使用准分子激光照射氧化硅薄膜（02），使形成初始多晶硅薄膜（04）的非晶硅薄膜（01），位于预设区域的初始多晶硅薄膜（04）为 目标低温多晶硅薄膜（05）。 多晶硅薄膜具有更均匀的晶体尺寸。
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