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公开(公告)号：US09761615B2
公开(公告)日：2017-09-12
申请号：US14769658
申请日：2014-10-27
Inventor： Xiaohui Jiang , Changjiang Yan , Jiaxiang Zhang
IPC: H01L27/12 , H01L21/77 , H01L21/311 , H01L21/768
CPC classification number: H01L27/1248 , H01L21/31116 , H01L21/31138 , H01L21/76816 , H01L21/77 , H01L27/12 , H01L27/1244 , H01L27/1262 , Y02P80/30
Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises: a base substrate (1), thin-film transistors (TFTs), an isolation layer (10) and an organic resin layer (8) formed on the base substrate (1), and a common electrode layer (12) formed on the organic resin layer (8). The isolation layer (10) covers source electrodes (6) and drain electrodes (7) of the TFTs; the organic resin layer (8) covers the isolation layer (10) and is provided with first through holes (9) corresponding to the drain electrodes (7) of the TFTs; the isolation layer (10) is provided with second through holes (11) communicated with the first through holes (9) to expose partial drain electrodes (7); and the dimension of the second through holes (11) is greater than that of the first through holes (9). The array substrate, the manufacturing method thereof and the display device resolve the problem of forming dark dots, ensure the product quality, reduce the waste of production materials, and reduce the production cost.
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2.发明授权Oxide semiconductor thin film transistor, manufacturing method, and display device thereof 有权氧化物半导体薄膜晶体管，制造方法及其显示装置公开(公告)号：US08987074B2
公开(公告)日：2015-03-24
申请号：US13983868
申请日：2013-02-27
Inventor： Zhenyu Xie , Shaoying Xu , Changjiang Yan , Tiansheng Li
CPC classification number: H01L29/7869 , H01L23/564 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78693 , H01L29/78696 , H01L2924/0002 , H01L2924/00
Abstract: An oxide semiconductor thin film transistor, a manufacturing method and a display device thereof are disclosed. An oxide semiconductor thin film transistor comprises a gate insulating layer (22), an oxide semiconductor layer (24) and a blocking layer (25), wherein a first transition layer (23) is formed between the gate insulating layer (22) and the oxide semiconductor layer (24), the oxygen content of the first transition layer (23) is higher than the oxygen content of the oxide semiconductor layer (24). The oxide semiconductor thin film transistor enhances the interface characteristic and the lattice matching between the oxide semiconductor layer (24) and the blocking layer (25) to improve the stability of the thin film transistor better.
Abstract translation: 公开了一种氧化物半导体薄膜晶体管，其制造方法和显示装置。 一种氧化物半导体薄膜晶体管，包括栅极绝缘层（22），氧化物半导体层（24）和阻挡层（25），其中第一过渡层（23）形成在栅极绝缘层（22）和 氧化物半导体层（24）中，第一过渡层（23）的氧含量高于氧化物半导体层（24）的氧含量。 氧化物半导体薄膜晶体管增强了氧化物半导体层（24）和阻挡层（25）之间的界面特性和晶格匹配，以更好地提高薄膜晶体管的稳定性。
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公开(公告)号：US09825070B2
公开(公告)日：2017-11-21
申请号：US14356004
申请日：2013-06-20
Inventor： Zhenyu Xie , Shaoying Xu , Tiansheng Li , Changjiang Yan
IPC: H01L27/144 , G02F1/133 , H01L31/0203 , H01L31/0216 , H01L31/20 , H01L29/786 , G02F1/1335 , G02F1/1333
CPC classification number: H01L27/1443 , G02F1/13318 , G02F1/133512 , G02F2001/133388 , H01L27/1446 , H01L29/78633 , H01L29/78678 , H01L31/0203 , H01L31/02164 , H01L31/202
Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes a display area and a non-display area. The non-display area includes at least one light sensor each including a light blocking layer on a substrate and for blocking light emitted from a backlight source; an insulating layer on the light blocking layer; a amorphous silicon layer on the insulating layer at a location corresponding to the light blocking layer and for sensing external light; an input electrode and an output electrode on the amorphous silicon layer and not contacting each other. The input electrode and the output electrode both contact the amorphous silicon layer, a part of the amorphous silicon layer between the input electrode and the output electrode forms a conductive channel. The output electrode is connected with a photoelectric detection circuit for inputting drain current generated by the conductive channel into the photoelectric detection circuit.
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公开(公告)号：US09716117B2
公开(公告)日：2017-07-25
申请号：US14743845
申请日：2015-06-18
Inventor： Changjiang Yan , Kai Lu , Jian Guo , Zhenyu Xie
IPC: H01L21/84 , H01L27/12 , H01L21/311 , H01L29/66 , H01L21/768
CPC classification number: H01L27/1259 , H01L21/31116 , H01L21/76804 , H01L29/66765
Abstract: The invention relates to the field of display technologies, and discloses a method for producing a via, a method for producing an array substrate, an array substrate and a display device to prevent a chamfer from being formed in producing the via, to promote the product quality and improve the display effect of the display device. The method for producing a via comprises: employing a first etching process to partially etch a top film layer in an area that needs to form a via above an electrode, wherein the vertical etching amount achieved by employing the first etching process is less than the thickness of the top film layer; and employing a second etching process for which the vertical etching rate is larger than the lateral etching rate to etch the remaining part in the area that needs to form a via, until the electrode is exposed.
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5.发明授权Signal line fabrication method, array substrate fabrication method, array substrate and display device 有权信号线制造方法，阵列基板制造方法，阵列基板和显示装置公开(公告)号：US09484253B2
公开(公告)日：2016-11-01
申请号：US14387519
申请日：2013-05-20
Inventor： Changjiang Yan , Haizheng Xie , Lei Chen , Shaoying Xu , Zhenyu Xie
IPC: H01L21/768 , H01L29/423 , H01L29/49 , H01L27/12
CPC classification number: H01L21/76865 , H01L27/124 , H01L27/1259 , H01L29/42384 , H01L29/4908
Abstract: Embodiments of the disclosure provide a signal line fabrication method, an array substrate fabrication method, an array substrate and a display device. The signal line fabrication method includes: sequentially forming a material layer for forming the signal line, a material layer for forming a first barrier layer and a material layer for forming a second barrier layer; forming the first barrier layer and the second barrier layer by a patterning process; and forming the signal line by a patterning process.
Abstract translation: 本公开的实施例提供信号线制造方法，阵列基板制造方法，阵列基板和显示装置。 信号线制造方法包括：顺序形成用于形成信号线的材料层，形成第一阻挡层的材料层和用于形成第二阻挡层的材料层; 通过图案化工艺形成第一阻挡层和第二阻挡层; 并通过图案化工艺形成信号线。
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Patent Agency Ranking
6.发明申请THIN FILM TRANSISTOR, METHOD FOR FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE 审中-公开薄膜晶体管，其制造方法，阵列基板和显示装置公开(公告)号：US20150214254A1
公开(公告)日：2015-07-30
申请号：US14361751
申请日：2013-12-12
Inventor： Changjiang Yan , Xiaowei Jiang , Xiaohui Jiang , Zhenyu Xie , Xu Cchen
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L29/78633 , H01L27/1262 , H01L29/41733 , H01L29/45 , H01L29/458 , H01L29/66969 , H01L29/7869
Abstract: A thin film transistor (TFT), a method for fabricating the same, an array substrate and a display device are provided. The TFT includes a source electrode and a drain electrode, a semiconductor active layer, a gate insulating layer and a gate electrode. The TFT further includes a light-shielding layer between the source electrode and the drain electrode. The light-shielding layer separates the source electrode and the drain electrode, and the light-shielding layer is disposed on a light incident side of the semiconductor active layer and is used to prevent the incident light from irradiating on the semiconductor active layer.
Abstract translation: 提供薄膜晶体管（TFT），其制造方法，阵列基板和显示装置。 TFT包括源电极和漏电极，半导体有源层，栅极绝缘层和栅电极。 TFT还包括在源电极和漏电极之间的遮光层。 遮光层分离源电极和漏电极，并且遮光层设置在半导体有源层的光入射侧，并用于防止入射光照射在半导体有源层上。
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公开(公告)号：US09024320B2
公开(公告)日：2015-05-05
申请号：US13984626
申请日：2012-11-15
Inventor： Tiansheng Li , Changjiang Yan , Shaoying Xu , Zhenyu Xie
IPC: H01L27/146
CPC classification number: H01L27/14643 , H01L27/14632 , H01L27/14658 , H01L27/14687 , H01L27/14689
Abstract: Embodiments of the present invention disclose a sensor and a method for manufacturing the same, the sensor comprising a plurality of sensing units arranged in array, each of which comprises a thin film transistor device and a photodiode sensor device and the photodiode sensor device comprising: a receiving electrode connected with a drain of the thin film transistor device, a photodiode located on the receiving electrode and covering the thin film transistor device, a transparent electrode on the photodiode and a biasing line connected with the transparent electrode.
Abstract translation: 本发明的实施例公开了一种传感器及其制造方法，该传感器包括排列成阵列的多个检测单元，每个检测单元包括薄膜晶体管器件和光电二极管传感器器件，光电二极管传感器器件包括： 与该薄膜晶体管器件的漏极连接的接收电极，位于接收电极上并覆盖薄膜晶体管器件的光电二极管上的透明电极和与透明电极连接的偏置线。
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8.发明申请SIGNAL LINE FABRICATION METHOD, ARRAY SUBSTRATE FABRICATION METHOD, ARRAY SUBSTRATE AND DISPLAY DEVICE 有权信号线制造方法，阵列基板制造方法，阵列基板和显示装置公开(公告)号：US20150104937A1
公开(公告)日：2015-04-16
申请号：US14387519
申请日：2013-05-20
Inventor： Changjiang Yan , Haizheng Xie , Lei Chen , Shaoying Xu , Zhenyu Xie
IPC: H01L21/768 , H01L27/12
CPC classification number: H01L21/76865 , H01L27/124 , H01L27/1259 , H01L29/42384 , H01L29/4908
Abstract: Embodiments of the disclosure provide a signal line fabrication method, an array substrate fabrication method, an array substrate and a display device. The signal line fabrication method includes: sequentially forming a material layer for forming the signal line, a material layer for forming a first barrier layer and a material layer for forming a second barrier layer; forming the first barrier layer and the second barrier layer by a patterning process; and forming the signal line by a patterning process.
Abstract translation: 本公开的实施例提供信号线制造方法，阵列基板制造方法，阵列基板和显示装置。 信号线制造方法包括：顺序形成用于形成信号线的材料层，形成第一阻挡层的材料层和用于形成第二阻挡层的材料层; 通过图案化工艺形成第一阻挡层和第二阻挡层; 并通过图案化工艺形成信号线。
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公开(公告)号：US20150084037A1
公开(公告)日：2015-03-26
申请号：US14348802
申请日：2013-09-27
Inventor： Changjiang Yan , Jun Long , Xiaohui Zhu , Zhenyu Xie , Xu Chen
IPC: H01L29/786 , H01L23/535 , H01L29/66
CPC classification number: H01L29/78618 , H01L23/535 , H01L27/1225 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L2924/0002 , H01L2924/00
Abstract: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor includes: a gate electrode (102) formed on a substrate (101), a gate insulating layer (103) formed on the gate electrode (102) and covering at least a part of the substrate (101), and a semiconductor layer (105′), a source electrode (107a) and a drain electrode (107b) which are formed on the gate insulating layer (103). The material of the semiconductor layer (105′) is an oxide semiconductor; and the material of the source electrode (107a) and drain electrode (107b) is the oxide semiconductor which is doped. The source electrode (107a), the drain electrode (107b) and the semiconductor layer (105′) are disposed in the same layer.
Abstract translation: 提供薄膜晶体管，其制造方法和阵列基板。 薄膜晶体管包括：形成在基板（101）上的栅电极（102），形成在栅电极（102）上并覆盖基板（101）的至少一部分的栅极绝缘层（103） 形成在栅极绝缘层（103）上的半导体层（105'），源电极（107a）和漏电极（107b）。 半导体层（105'）的材料是氧化物半导体; 并且源电极（107a）和漏电极（107b）的材料是掺杂的氧化物半导体。 源电极（107a），漏电极（107b）和半导体层（105'）设置在同一层中。
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10.发明授权公开(公告)号：US10043911B2
公开(公告)日：2018-08-07
申请号：US14361751
申请日：2013-12-12
Inventor： Changjiang Yan , Xiaowei Jiang , Xiaohui Jiang , Zhenyu Xie , Xu Chen
IPC: H01L29/786 , H01L29/417 , H01L29/45 , H01L27/12 , H01L29/66
Abstract: A thin film transistor (TFT), a method for fabricating the same, an array substrate and a display device are provided. The TFT includes a source electrode and a drain electrode, a semiconductor active layer, a gate insulating layer and a gate electrode. The TFT further includes a light-shielding layer between the source electrode and the drain electrode. The light-shielding layer separates the source electrode and the drain electrode, and the light-shielding layer is disposed on a light incident side of the semiconductor active layer and is used to prevent the incident light from irradiating on the semiconductor active layer.
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