公开(公告)号：US20200172760A1

公开(公告)日：2020-06-04

申请号：US16208742

申请日：2018-12-04

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT ,  Fernando HUNG LOW ,  Daniel CLINGERMAN ,  Roman A. IVANOV ,  Steven GRUMBINE

IPC: C09G1/02 ,  H01L21/321

Abstract: A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.

公开(公告)号：US20170194160A1

公开(公告)日：2017-07-06

申请号：US15399810

申请日：2017-01-06

Applicant: Cabot Microelectronics Corporation

Inventor： Sudeep PALLIKKARA KUTTIATOOR ,  Renhe JIA ,  Kuen-Min CHEN ,  Steven KRAFT ,  Phillip W. CARTER

IPC: H01L21/3105 ,  C09K3/14 ,  C09G1/02

CPC classification number: H01L21/31053 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing a low-k dielectric composition, which includes less than about 80% by weight of carbon, with a polishing pad and a chemical-mechanical polishing composition comprising water and abrasive particles having a positive surface charge, wherein the polishing composition has a pH of from about 3 to about 6; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the low-k dielectric composition is carbon-doped silicon oxide.

公开(公告)号：US20170044403A1

公开(公告)日：2017-02-16

申请号：US15338724

申请日：2016-10-31

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

IPC: C09G1/02 ,  B24B37/04 ,  H01L21/3105 ,  C09K3/14 ,  B24B37/20

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

公开(公告)号：US20160060487A1

公开(公告)日：2016-03-03

申请号：US14838460

申请日：2015-08-28

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: An improved composition and method for polishing a sapphire surface is disclosed. The method comprises abrading a sapphire surface, such as a C-plane, R-plane or A-plane surface of a sapphire wafer, with a polishing composition comprising colloidal silica suspended in an aqueous medium, the polishing composition having an acidic pH and including a sapphire removal rate-enhancing amount of phosphoric acid.

Abstract translation: 公开了用于抛光蓝宝石表面的改进的组合物和方法。 该方法包括用包含悬浮在水性介质中的胶体二氧化硅的抛光组合物研磨蓝宝石表面，例如蓝宝石晶片的C面，R平面或A平面表面，该抛光组合物具有酸性pH并且包括 蓝宝石去除率增加量的磷酸。

公开(公告)号：US20180016469A1

公开(公告)日：2018-01-18

申请号：US15649378

申请日：2017-07-13

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT ,  Phillip W. CARTER ,  Andrew R. WOLFF

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive, (b) a cobalt accelerator, and (c) an oxidizing agent that oxidizes a metal, wherein the polishing composition has a pH of about 4 to about 10. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

公开(公告)号：US20200172761A1

公开(公告)日：2020-06-04

申请号：US16208779

申请日：2018-12-04

Applicant: Cabot Microelectronics Corporation

Inventor： Fernando HUNG LOW ,  Steven KRAFT ,  Roman A. IVANOV

IPC: C09G1/02 ,  H01L21/3105

Abstract: The invention provides a chemical-mechanical polishing composition for polishing a silicon nitride containing substrate. The composition includes an aqueous carrier; cationic silica particles dispersed in the aqueous carrier, the cationic silica abrasive particles having a zeta potential of at least 10 mV in the polishing composition; a polishing additive selected from the group consisting of a polyether amine, a polysilamine, a polyvinylimidazole, and a combination thereof, wherein the polyether amine and the polysilamine have corresponding weight average molecular weights of about 1,000 g/mol or less. The composition has a pH of greater than about 6. A method for polishing a silicon nitride containing substrate is also provided.

公开(公告)号：US20170260421A1

公开(公告)日：2017-09-14

申请号：US15603634

申请日：2017-05-24

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT ,  Andrew WOLFF ,  Phillip W. CARTER ,  Kristin HAYES ,  Benjamin PETRO

IPC: C09G1/02 ,  H01L21/321 ,  B24B37/04 ,  C23F3/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/04 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.

公开(公告)号：US20160257856A1

公开(公告)日：2016-09-08

申请号：US14639564

申请日：2015-03-05

Applicant: Cabot Microelectronics Corporation

Inventor： Brian REISS ,  Dana SAUTER VAN NESS ,  Viet LAM ,  Alexander HAINS ,  Steven KRAFT ,  Renhe JIA

IPC: C09G1/04 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  B24B37/20 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1409 ,  C09K3/1454 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract translation: 本发明提供了一种化学机械抛光组合物，其包括第一磨料颗粒，其中第一磨料颗粒是湿法二氧化铈颗粒，其中值粒径为约40nm至约100nm，以抛光组合物的浓度存在于抛光组合物中 约0.005重量％ ％至约2wt。 ％，并且具有至少约300nm的粒度分布，官能化杂环，pH调节剂和水性载体，并且其中抛光组合物的pH为约1至约6.本发明还提供了一种 将抛光组合物抛光衬底，特别是包含氧化硅层的衬底的方法。

公开(公告)号：US20200172762A1

公开(公告)日：2020-06-04

申请号：US16208797

申请日：2018-12-04

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT ,  Fernando HUNG LOW ,  Roman A. IVANOV ,  Steven GRUMBINE

IPC: C09G1/02 ,  H01L21/321

Abstract: A chemical mechanical polishing composition for polishing a substrate having copper, barrier, and dielectric layers includes a water based liquid carrier, cationic silica abrasive particles dispersed in the liquid carrier, and a triazole compound, wherein the polishing composition has a pH of greater than about 6 and the cationic silica abrasive particles have a zeta potential of at least 10 mV. The triazole compound is not benzotriazole or a benzotriazole compound. A method for chemical mechanical polishing a substrate including copper, barrier, and dielectric layers includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the copper, barrier, and dielectric layers from the substrate and thereby polish the substrate.