Lithographic apparatus and device manufacturing method
    7.
    发明申请
    Lithographic apparatus and device manufacturing method 有权
    平版印刷设备和器件制造方法

    公开(公告)号:US20070273853A1

    公开(公告)日:2007-11-29

    申请号:US11655999

    申请日:2007-01-22

    IPC分类号: G03B27/32

    摘要: A method of transferring an image of a pattern layout onto a surface of a substrate including selecting a first illumination profile for a first area of the pattern layout and a second illumination profile for a second area of the pattern layout; switching illumination profile during transfer of the image of the pattern layout such that the first area of the pattern layout is illuminated with the first illumination profile and the second area is illuminated with the second illumination profile; and projecting an image of the illuminated first and second areas onto the surface of the substrate.

    摘要翻译: 将图案布局的图像转印到基板的表面上的方法,包括为图案布局的第一区域选择第一照明轮廓,以及为图案布局的第二区域选择第二照明轮廓; 在图案布局的图像传送期间切换照明轮廓,使得图案布局的第一区域被第一照明轮廓照亮,并且第二区域被第二照明轮廓照亮; 以及将照射的第一和第二区域的图像投影到基板的表面上。

    System, apparatus and method for maskless lithography that emulates binary, attenuating phase-shift and alternating phase-shift masks
    8.
    发明授权
    System, apparatus and method for maskless lithography that emulates binary, attenuating phase-shift and alternating phase-shift masks 有权
    用于模拟二进制,衰减相移和交替相移掩模的无掩模光刻的系统,装置和方法

    公开(公告)号:US07274502B2

    公开(公告)日:2007-09-25

    申请号:US11018483

    申请日:2004-12-22

    IPC分类号: G02B26/00

    CPC分类号: G03F7/70291 G02B26/0833

    摘要: A tilting mirror design for maskless lithography is proposed. In this mirror, the tilting portion occupies about 60% of the entire element area. The surrounding space is made 100% reflective and out-of-phase with respect to the tilting portion. The ratio between the tilting portion of the mirror and the out-of-phase portion is optimized in order to result in equal positive and negative maximum amplitudes over a complete range of tilt angles.

    摘要翻译: 提出了一种用于无掩模光刻的倾斜镜设计。 在该反射镜中,倾斜部分占整个元件面积的大约60%。 周围空间相对于倾斜部分被制成100%反射和异相。 反射镜的倾斜部分和异相部分之间的比率被优化,以便在整个倾斜角范围内产生相等的正和负最大幅度。

    Lithographic apparatus and device manufacturing method using interferometric and maskless exposure units
    9.
    发明申请
    Lithographic apparatus and device manufacturing method using interferometric and maskless exposure units 有权
    使用干涉式和无掩模曝光单元的平版印刷设备和器件制造方法

    公开(公告)号:US20070139633A1

    公开(公告)日:2007-06-21

    申请号:US11311640

    申请日:2005-12-20

    IPC分类号: G03B27/54

    摘要: A lithographic system combining an interference exposure unit and a lithography unit. The lithography unit can comprise an array of individually controllable elements. The lithography system can be arranged such that a pitch of the lines exposed by the interference exposure unit is an integer multiple of a size of an exposure area of the lithography unit corresponding to a single individually controllable element.

    摘要翻译: 组合干涉曝光单元和光刻单元的光刻系统。 光刻单元可以包括单独可控元件的阵列。 光刻系统可以布置成使得由干涉曝光单元曝光的线的间距是与单个可单独控制的元件对应的光刻单元的曝光区域的尺寸的整数倍。