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    METHOD FOR PRODUCING PERIODIC CRYSTALLINE SILICON NANOSTRUCTURES
    1.
    发明申请
    METHOD FOR PRODUCING PERIODIC CRYSTALLINE SILICON NANOSTRUCTURES 审中-公开
    用于生产周期性结晶硅纳米结构的方法

    公开(公告)号：US20140213044A1

    公开(公告)日：2014-07-31

    申请号：US14240034

    申请日：2012-08-22

    申请人： Christiane Becker ,  Tobias Sontheimer ,  Matthias Bockmeyer ,  Eveline Rudigier-Voigt ,  Bernd Rech

    发明人： Christiane Becker ,  Tobias Sontheimer ,  Matthias Bockmeyer ,  Eveline Rudigier-Voigt ,  Bernd Rech

    IPC分类号： H01L21/02 ,  H01L29/04

    CPC分类号： H01L21/02667 ,  B82Y20/00 ,  B82Y40/00 ,  G02B1/005 ,  G02B6/1225 ,  G02B6/13 ,  H01L29/04

    摘要： A method for producing periodic crystalline silicon nanostructures of large surface area by: generating a periodic structure having a lattice constant of between 100 nm and 2 μm on a substrate, the substrate used being a material which is stable at up to at least 570° C., and the structure being produced with periodically repeating shallow and steep areas/flanks, and, subsequently, depositing silicon by directed deposition onto the periodically structured substrate, with a thickness in the range from 0.2 to 3 times the lattice constant, or 40 nm to 6 μm, at a substrate temperature of up to 400° C., followed by thermally treating the deposited Si layer to effect solid-phase crystallization, at temperatures between 570° C. and 1400° C., over a few minutes up to several days, and optionally subsequently wet-chemically selective etching to remove resultant porous regions of the Si layer.

    摘要翻译： 一种制造具有大表面积的周期性结晶硅纳米结构的方法，其特征在于，在基板上产生晶格常数为100nm〜2μm的周期性结构，所使用的基板是在至少570℃以上稳定的材料 并且随着周期性重复的浅和陡的区域/侧面而产生结构，并且随后通过定向沉积沉积到周期性结构的基底上的硅，其厚度在晶格常数的0.2至3倍的范围内，或40nm 至6μm，在高达400℃的衬底温度下，然后在570℃至1400℃的温度下，在几分钟内对沉积的Si层进行热处理以进行固相结晶，直到达到 几天，并且任选地随后进行湿化学选择性蚀刻以除去Si层的所得多孔区域。