公开(公告)号：US20180151366A1

公开(公告)日：2018-05-31

申请号：US15570841

申请日：2016-04-05

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

Inventor： Takeshi ENDO ,  Atsuya AKIBA ,  Yuichi TAKEUCHI ,  Hidefumi TAKAYA ,  Sachiko AOI

IPC: H01L21/20 ,  H01L29/78 ,  H01L29/16 ,  H01L21/265 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L21/2003 ,  H01L21/046 ,  H01L21/265 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/0843 ,  H01L29/12 ,  H01L29/1608 ,  H01L29/78

Abstract: A semiconductor device includes: a substrate having a cell region with a semiconductor element and an outer peripheral region; and a drift layer on the substrate. The semiconductor element includes a base region, a source region, a trench gate structure, a deep layer deeper than a gate trench, a source electrode, and a drain electrode. The outer peripheral region has a recess portion in which the drift layer are exposed, and a guard ring layer. The guard ring layer includes multiple guard ring trenches having a frame shape, surrounding the cell region and arranged on an exposed surface of the drift layer, and a first guard ring in the guard ring trenches. Each of the linear deep trenches has a width equal to a width of each of the linear guard ring trenches.

公开(公告)号：US20240347521A1

公开(公告)日：2024-10-17

申请号：US18594334

申请日：2024-03-04

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Yoshitaka KATO ,  Takeshi ENDO ,  Hiroshi ISHINO

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/42

CPC classification number: H01L25/162 ,  H01L23/42 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/33181

Abstract: A semiconductor device includes a semiconductor module, a wiring substrate, a sealing member, and a thermal diffusion plate. The semiconductor module includes a semiconductor chip in which a semiconductor element is disposed. The wiring substrate is electrically connected to the semiconductor module. The sealing member seals the semiconductor module and the wiring substrate. The thermal diffusion plate is disposed between the semiconductor module and the wiring substrate, and has a thermal conductivity higher than a thermal conductivity of the sealing member. The thermal diffusion plate has a plate shape and is disposed in the sealing member in a state where a plane direction of the thermal diffusion plate is along a direction intersecting an arrangement direction of the semiconductor module and the wiring substrate.

公开(公告)号：US20240304560A1

公开(公告)日：2024-09-12

申请号：US18520743

申请日：2023-11-28

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Kazuki KUWATA ,  Hiroshi ISHINO ,  Takeshi ENDO ,  Yoshitaka KATO

IPC: H01L23/538 ,  H01L21/56 ,  H01L21/60 ,  H01L23/00 ,  H01L23/31 ,  H01L25/16

CPC classification number: H01L23/5386 ,  H01L21/56 ,  H01L21/60 ,  H01L23/3121 ,  H01L24/81 ,  H01L24/95 ,  H01L25/16 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/95 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1426

Abstract: A semiconductor device includes a first lead wire connected to a first connection target; a second lead wire connected to a second connection target; and a sealing resin that seals the first connection target, the second connection target, the first lead wire, and the second lead wire. The first lead wire includes a first connection portion connected to the first connection target, a first top portion exposed from the sealing resin, and a first standing portion connecting the first connection portion and the first top portion. The second lead wire includes a second connection portion connected to the second connection target, a second top portion exposed from the sealing resin, and a second standing portion connecting the second connection portion and the second top portion. The first top portion and the second top portion are disposed to face each other.

公开(公告)号：US20200312818A1

公开(公告)日：2020-10-01

申请号：US16823402

申请日：2020-03-19

Applicant: DENSO CORPORATION

Inventor： Tomohito IWASHIGE ,  Takeshi ENDO ,  Kazuhiko SUGIURA

IPC: H01L25/07 ,  H01L23/00 ,  H01L23/367 ,  H01L21/48 ,  H01L25/00

Abstract: In a semiconductor device, a first semiconductor chip and a second semiconductor chip are disposed between a first support member and a second support member. A first underlayer bonding material is disposed between the first semiconductor chip and the first support member. A second underlayer bonding material is disposed between the second semiconductor chip and the first support member. A first upper layer bonding material is disposed between the first semiconductor chip and the second support member. A second upper layer bonding material is disposed between the second semiconductor chip and the second support member.

公开(公告)号：US20190280548A1

公开(公告)日：2019-09-12

申请号：US16423737

申请日：2019-05-28

Applicant: DENSO CORPORATION

Inventor： Yoshimitsu TAKAHASHI ,  Mitsutaka ITO ,  Hiroshi SHIMIZU ,  Takeshi ENDO

IPC: H02K3/28 ,  H02K1/16 ,  H02K1/27 ,  H02K7/00 ,  H02K11/33 ,  H02K21/14

Abstract: In a rotating electric machine, a stator includes a stator core and three phase windings. In the stator core, a plurality of slots arrayed in a circumferential direction are formed. The three phase windings are wound around the stator core. The three phase windings include first, second, and third windings. One end of the first winding is provided further towards an outer side of the stator in a radial direction than a division line that divides the slot into two in the radial direction of the stator. One end of the second winding is provided further towards an inner side of the stator in the radial direction than the division line. One end of the third winding is provided between the one end of the first winding and the one end of the second winding relative to the radial direction of the stator, with at least a single slot therebetween.

公开(公告)号：US20220359229A1

公开(公告)日：2022-11-10

申请号：US17872142

申请日：2022-07-25

Applicant: DENSO CORPORATION

Inventor： Tomohito IWASHIGE ,  Takeshi ENDO

IPC: H01L21/52 ,  H01L23/04

Abstract: Joining a second supporting member to one surface of a semiconductor chip through an upper layer joining portion includes: forming, on the one surface, a pre-joining layer by pressure-sintering a first constituent member containing a sintering material on the one surface such that spaces between the plurality of protrusions are filled with the pre-joining layer and the pre-joining layer has a flat surface on a side of the pre-joining layer away from the semiconductor chip; arranging, on the flat surface, the second supporting member through a second constituent member containing a sintering material; and heating and pressurizing the second constituent member. Thereby, an upper layer joining portion is formed by the second constituent member and the pre-joining layer.

公开(公告)号：US20210257273A1

公开(公告)日：2021-08-19

申请号：US17172361

申请日：2021-02-10

Applicant: DENSO CORPORATION

Inventor： Yoshitaka KATO ,  Takeshi ENDO

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

Abstract: A semiconductor module includes a power element, a signal wiring, and a heat sink. The signal wiring is connected to a signal pad of the power element. The heat sink cools the power element. The power element has an active area provided by a portion where the signal pad is formed. The signal pad is thermally connected to the heat sink via the signal wiring.