利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

4 条记录 (耗时 0.014 秒)

    Insitu post atomic layer deposition destruction of active species
    1.
    发明授权
    Insitu post atomic layer deposition destruction of active species 失效
    原子层沉积破坏活性物种

    公开(公告)号：US08257497B2

    公开(公告)日：2012-09-04

    申请号：US11009425

    申请日：2004-12-10

    申请人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo J Derderian

    发明人： Demetrius Sarigiannis ,  Shuang Meng ,  Garo J Derderian

    IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

    CPC分类号： H01L21/28562 ,  C23C16/4407 ,  C23C16/45544 ,  C23C16/46 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/31616 ,  Y10S438/903 ,  Y10S438/905 ,  Y10S438/913 ,  Y10S438/935

    摘要： Systems and methods for insitu post atomic layer deposition (ALD) destruction of active species are provided. ALD processes deposit multiple atomic layers on a substrate. Pre-cursor gases typically enter a reactor and react with the substrate resulting in a monolayer of atoms. After the remaining gas is purged from the reactor, a second pre-cursor gas enters the reactor and the process is repeated. The active species of some pre-cursor gases do not readily purge from the reactor, thus increasing purge time and decreasing throughput. A high-temperature surface placed in the reactor downstream from the substrate substantially destroys the active species insitu. Substantially destroying the active species allows the reactor to be readily purged, increasing throughput.

    摘要翻译： 提供了活性物质的原位层沉积（ALD）破坏的系统和方法。 ALD工艺在衬底上沉积多个原子层。 前体气体通常进入反应器并与底物反应产生单层原子。 在从反应器中清除剩余的气体之后，第二个前置气体进入反应器并重复该过程。 一些前体气体的活性物质不容易从反应器中吹扫，从而增加吹扫时间并降低生产量。 从基板下游放置在反应器中的高温表面基本上破坏了活性物质。 基本上破坏活性物质允许反应器容易地清除，增加生产量。

    Methods of forming materials
    2.
    发明授权
    Methods of forming materials 有权
    材料成型方法

    公开(公告)号：US07368381B2

    公开(公告)日：2008-05-06

    申请号：US11413431

    申请日：2006-04-28

    申请人： Demetrius Sarigiannis ,  Garo J Derderian ,  Cem Basceri

    发明人： Demetrius Sarigiannis ,  Garo J Derderian ,  Cem Basceri

    IPC分类号： H01L21/44

    CPC分类号： C23C18/1283 ,  C23C18/1208 ,  C23C18/122 ,  C23C18/1245 ,  C23C18/125 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/28556 ,  H01L21/31 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/318

    摘要： The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a precursor of a desired material within a supercritical fluid. The precursor is relatively reactive under one set of conditions and is relatively non-reactive under another set of conditions. The precursor and supercritical fluid mixture is initially provided in the chamber under the conditions at which the precursor is relatively non-reactive. Subsequently, and while maintaining the supercritical state of the supercritical fluid, the conditions within the reaction chamber are changed to the conditions under which the precursor is relatively reactive. The precursor reacts to form the desired material, and at least some of the desired material forms a film on the substrate.

    摘要翻译： 本发明包括在基底上形成膜的方法。 在反应室内设置基板，并且还在室内设置混合物。 该混合物包括在超临界流体内的所需材料的前体。 前体在一组条件下是相对反应的，并且在另一组条件下相对不反应。 初始和超临界流体混合物最初在前体相对不反应的条件下在室中提供。 随后，在保持超临界流体的超临界状态的同时，将反应室内的条件变更为前体相对反应的条件。 前体反应形成所需的材料，并且所需材料中的至少一些在基材上形成膜。

    Method of increasing deposition rate of silicon dioxide on a catalyst
    3.
    发明授权
    Method of increasing deposition rate of silicon dioxide on a catalyst 有权
    提高催化剂上二氧化硅沉积速率的方法

    公开(公告)号：US08110891B2

    公开(公告)日：2012-02-07

    申请号：US11321437

    申请日：2005-12-29

    申请人： Chris W Hill ,  Garo J Derderian

    发明人： Chris W Hill ,  Garo J Derderian

    IPC分类号： H01L21/762

    CPC分类号： C23C16/45534 ,  C23C16/403 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/316 ,  H01L21/31683 ,  H01L21/31695

    摘要： Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide/silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of oxygen and nitrogen to convert the organoaluminum layer to a porous aluminum oxide layer, and a silanol precursor to form a thick layer of silicon dioxide over the porous oxide layer. The process provides an increased rate of deposition of the silicon dioxide, with each cycle producing a thick layer of silicon dioxide of about 120 Å over the layer of porous aluminum oxide.

    摘要翻译： 提供了用于形成介电层的方法，以及由这些方法产生的结构和装置以及结合装置的系统。 本发明提供一种氧化铝/氧化硅层压膜，其通过将基底顺序地暴露于有机铝催化剂以在表面上形成单层，氧和氮的远程等离子体将有机铝层转化为多孔氧化铝层而形成，以及硅烷醇 在多孔氧化物层上形成厚二氧化硅层的前体。 该方法提供了二氧化硅沉积速率的提高，每个循环在多孔氧化铝层上产生大约二氧化硅的厚层。