公开(公告)号：US20150045277A1

公开(公告)日：2015-02-12

申请号：US14385946

申请日：2013-03-14

Applicant: Entegris, Inc.

Inventor： Jun Liu ,  Trace Quentin Hurd ,  Laisheng Sun ,  Steven Medd ,  Shrane Ning Jenq

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/26

CPC classification number: C11D7/3209 ,  C11D3/0042 ,  C11D3/0073 ,  C11D7/265 ,  C11D7/268 ,  C11D7/3218 ,  C11D7/3245 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/7684 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.

Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括至少一种季碱，至少一种胺，至少一种唑类腐蚀抑制剂，至少一种还原剂和至少一种溶剂。 该组合物可与微电子器件的表面高效地清洁后CMP残留物和污染物质，同时与阻挡层相容，其中阻挡层基本上不含钽或钛。

公开(公告)号：US11845917B2

公开(公告)日：2023-12-19

申请号：US16694426

申请日：2019-11-25

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Donald Frye ,  Elizabeth Thomas ,  Jun Liu ,  Michael White

IPC: C09K13/00 ,  C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  B08B3/08 ,  C11D7/06 ,  H01L21/02 ,  C11D7/26

CPC classification number: C11D7/3218 ,  B08B3/08 ,  C09K13/00 ,  C11D7/06 ,  C11D7/265 ,  C11D7/34 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/02074

Abstract: A cleaning composition is disclosed for cleaning residue and/or contaminants from microelectronic devices having same thereon. The composition comprises at least one complexing agent, at least one cleaning additive, at least one pH adjusting agent, water, and at least one oxylamine compound. Advantageously, the compositions show effective cleaning of cobalt-containing substrates and improved cobalt compatibility.

公开(公告)号：US20230295537A1

公开(公告)日：2023-09-21

申请号：US18117175

申请日：2023-03-03

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Chao-Yu Wang ,  Daniela White ,  Michael L. White

IPC: C11D7/32 ,  C11D11/00 ,  C11D7/34 ,  C11D7/50 ,  H01L21/02

CPC classification number: C11D7/3218 ,  C11D11/0047 ,  C11D7/34 ,  C11D7/3272 ,  C11D7/5022 ,  H01L21/02074

Abstract: The invention provides compositions useful in post-CMP cleaning operations, particularly those substrates which contain exposed copper surfaces. The compositions of the invention provide excellent cleaning of such substrates while showing fewer defects from silica and organic materials present at the surface of the substrate. Also provided is a method for cleaning a microelectronic device substrate using such compositions and a kit comprising, in two or more containers, the components of the compositions.

公开(公告)号：US20230159866A1

公开(公告)日：2023-05-25

申请号：US17991251

申请日：2022-11-21

Applicant: ENTEGRIS, INC.

Inventor： Atanu K. Das ,  Daniela White ,  Michael L. White ,  Jun Liu ,  Aditya Dilip Verma

IPC: C11D11/00 ,  C11D1/72 ,  C11D3/43 ,  C11D3/30 ,  C11D3/04 ,  C11D3/37 ,  C11D3/34 ,  C11D3/39 ,  C11D3/36 ,  C11D3/22 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D1/721 ,  C11D3/43 ,  C11D3/30 ,  C11D3/044 ,  C11D3/3776 ,  C11D3/3454 ,  C11D3/3942 ,  C11D3/042 ,  C11D3/361 ,  C11D3/225 ,  H01L21/02057

Abstract: Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

公开(公告)号：US20220336210A1

公开(公告)日：2022-10-20

申请号：US17720580

申请日：2022-04-14

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Michael L. White ,  Daniela White ,  Emanuel I. Cooper

IPC: H01L21/02

Abstract: Provided are compositions useful for the cleaning of microelectronic device structures. The residues may include post-CMP, post-etch, post-ash residues, pad and brush debris, metal and metal oxide particles and precipitated metal organic complexes such as copper-benzotriazole complexes. Advantageously, the compositions as described herein show improved aluminum, cobalt, and copper compatibility.

公开(公告)号：US11127587B2

公开(公告)日：2021-09-21

申请号：US15116372

申请日：2015-02-03

Applicant: ENTEGRIS, INC.

Inventor： Jun Liu ,  Elizabeth Thomas ,  Donald Frye

IPC: H01L21/02 ,  C11D7/06 ,  C11D7/16 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  C11D7/36 ,  C11D7/12 ,  C11D7/04 ,  C11D7/10 ,  C11D7/34

Abstract: An amine-free composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The compositions achieve highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material, copper interconnect material, or cobalt-containing materials.

公开(公告)号：US10731109B2

公开(公告)日：2020-08-04

申请号：US15951023

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Donald Frye ,  Jun Liu ,  Daniela White ,  Michael White

IPC: C11D3/30 ,  C11D3/00 ,  C11D11/00 ,  C11D3/33 ,  C11D3/20 ,  C11D3/36 ,  H01L21/02 ,  C11D3/04 ,  C11D3/28

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.

公开(公告)号：US20180291309A1

公开(公告)日：2018-10-11

申请号：US15951023

申请日：2018-04-11

Applicant: Entegris, Inc.

Inventor： Donald Frye ,  Jun Liu ,  Daniela White ,  Michael White

IPC: C11D3/00 ,  C11D3/30 ,  C11D3/33 ,  C11D3/20 ,  C11D11/00

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material. In addition, the cleaning compositions are compatible with ruthenium-containing materials.

公开(公告)号：US20180251712A1

公开(公告)日：2018-09-06

申请号：US15971535

申请日：2018-05-04

Applicant: Entegris, Inc.

Inventor： Laisheng Sun ,  Peng Zhang ,  Jun Liu ,  Steven Medd ,  Jeffrey A. Bames ,  Shrane Ning Jenq

IPC: C11D11/00 ,  H01L21/02 ,  C11D3/30 ,  C11D1/62 ,  C23G1/20 ,  C11D7/32 ,  C11D3/00

CPC classification number: C11D11/0047 ,  C11D1/62 ,  C11D3/0073 ,  C11D3/30 ,  C11D7/32 ,  C11D7/3209 ,  C23G1/20 ,  H01L21/02063 ,  H01L21/02065 ,  H01L21/02074

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

公开(公告)号：US11124746B2

公开(公告)日：2021-09-21

申请号：US16659471

申请日：2019-10-21

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Michael White ,  Jun Liu ,  Elizabeth Thomas

IPC: C11D7/32 ,  C11D11/00 ,  C11D3/00 ,  C11D3/30 ,  B08B3/08 ,  C11D1/62 ,  C11D1/58 ,  C11D1/90 ,  H01L21/02 ,  C11D3/28

Abstract: The disclosure generally relates to a composition and process for cleaning residue and/or contaminants from microelectronic devices having said residue and contaminants thereon. The residue may include post-CMP, post-etch, and/or post-ash residue. The compositions and methods are particularly advantageous when cleaning a microelectronic surface comprising copper, low-k dielectric materials, and barrier materials comprising at least one of tantalum-containing material, cobalt-containing material, tantalum-containing, tungsten-containing, and ruthenium-containing material.