公开(公告)号：US20230014626A1

公开(公告)日：2023-01-19

申请号：US17901412

申请日：2022-09-01

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE

IPC: C09G1/02 ,  H01L21/3105 ,  B24B7/22 ,  C09K3/14

Abstract: A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

公开(公告)号：US20240218208A1

公开(公告)日：2024-07-04

申请号：US18543206

申请日：2023-12-18

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Shota SUZUKI

IPC: C09G1/02 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436

Abstract: An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
The present invention provides a polishing composition including abrasive grains and an acidic compound. The abrasive grains are inorganic particles having an organic acid immobilized on a surface thereof. In a particle size distribution of the abrasive grains measured by a dynamic light scattering method, D90/D10 is 2.2 or more and D50 is 70 nm or more, where D10 is a particle diameter when a cumulative particle mass from a fine particle side reaches 10% of the total particle mass, D50 is a particle diameter when the cumulative particle mass from the fine particle side reaches 50% of the total particle mass, and D90 is a particle diameter when the cumulative particle mass from the fine particle side reaches 90% of the total particle mass.

公开(公告)号：US20200308449A1

公开(公告)日：2020-10-01

申请号：US16797177

申请日：2020-02-21

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Tsutomu YOSHINO ,  Shogo ONISHI ,  Hirofumi IKAWA ,  Yasuto ISHIDA

IPC: C09G1/02

Abstract: An object of the present invention is to provide a new polishing composition that contributes to improving the quality of a device.There is provided a polishing composition containing: an abrasive grain having an organic acid immobilized on a surface thereof; a first water-soluble polymer having a sulfonic acid group or a group having a salt thereof, or a carboxyl group or a group having a salt thereof; a second water-soluble polymer different from the first water-soluble polymer; a nonionic surfactant; and an aqueous carrier, wherein the polishing composition is used for polishing an object to be polished.

公开(公告)号：US20230312981A1

公开(公告)日：2023-10-05

申请号：US18119460

申请日：2023-03-09

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Yuki OZEKI ,  Akane KUMAYAMA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

CPC classification number: C09G1/02 ,  C09K3/1409 ,  B24B37/044

Abstract: The present invention provides a method for producing an inorganic particle-containing slurry, by which the number of coarse particles can be sufficiently reduced. The present invention is a method for producing an inorganic particle-containing slurry, which comprises: a step of preparing an inorganic particle dispersion containing inorganic particles and a dispersing medium, and having a pH less than the isoelectric point of the inorganic particles; and a step of adding an alkaline compound to the inorganic particle dispersion in such a manner that the pH does not reach the isoelectric point of the inorganic particles.

公开(公告)号：US20210079264A1

公开(公告)日：2021-03-18

申请号：US17008872

申请日：2020-09-01

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Shogo Onishi

IPC: C09G1/02 ,  H01L21/321

Abstract: A polishing composition according to the present invention contains colloidal silica and a quaternary ammonium compound represented by Formula (1), wherein a pH is less than 4.0, and a zeta potential of the colloidal silica is −60 mV or higher and −35 mV or lower.

公开(公告)号：US20240327674A1

公开(公告)日：2024-10-03

申请号：US18596278

申请日：2024-03-05

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Akane KUMAYAMA

IPC: C09G1/02 ,  H01L21/3105

CPC classification number: C09G1/02 ,  H01L21/31053

Abstract: The present invention provides a means capable of polishing a Low-k material and silicon nitride at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate. The present invention provides a means capable of making a selection ratio of a polishing removal rate of silicon nitride to a polishing removal rate of silicon oxide appropriate while polishing silicon oxide and silicon nitride at a high polishing removal rate and capable of reducing defects on a silicon oxide surface after polishing.
The present invention is a polishing composition containing abrasive grains and an alkylamine compound having at least one linear or branched alkyl group having 2 or more and 15 or less carbon atoms, in which a pH is less than 7, and a zeta potential of the abrasive grains in the polishing composition is negative.

公开(公告)号：US20240309240A1

公开(公告)日：2024-09-19

申请号：US18602204

申请日：2024-03-12

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Akane KUMAYAMA

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: The present invention provides a means capable of polishing a Low-k material and silicon nitride each at a high polishing removal rate and making a selection ratio of a polishing removal rate of the Low-k material to a polishing removal rate of the silicon nitride appropriate.
The present invention is a polishing composition containing abrasive grains and a quaternary phosphonium salt, in which a pH is less than 7.0, and a zeta potential of the abrasive grains in the polishing composition is −10 mV or less.

公开(公告)号：US20210380419A1

公开(公告)日：2021-12-09

申请号：US17331728

申请日：2021-05-27

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE

IPC: C01B33/14 ,  C09K3/14

Abstract: There is provided a method of producing anionically modified colloidal silica capable of polishing a silicon nitride film at a high speed and suppressing a polishing speed of a silicon oxide film. A method of producing anionically modified colloidal silica includes ion exchanging raw colloidal silica using an ion exchange resin (ion exchange step); and anionically modifying ion-exchanged raw colloidal silica to obtain anionically modified colloidal silica (modification step).

公开(公告)号：US20240318036A1

公开(公告)日：2024-09-26

申请号：US18605224

申请日：2024-03-14

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: To provide a polishing composition that can polish silicon nitride film at a high polishing removal rate and suppress the polishing removal rate for polycrystalline silicon film.
A polishing composition containing abrasive grains having a negative zeta potential in the polishing composition, and a polyalkylene oxide compound represented by formula (1); and having a pH of less than 7.

公开(公告)号：US20230312980A1

公开(公告)日：2023-10-05

申请号：US18117162

申请日：2023-03-03

Applicant: FUJIMI INCORPORATED

Inventor： Ryota MAE ,  Akane KUMAYAMA ,  Masaki TADA

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1409 ,  H01L21/30625

Abstract: Provided is a means capable of polishing an organic material at a high polishing speed and reducing the number of scratches after polishing. The polishing composition of the present invention contains zirconia particles and a dispersing medium, in which the zirconia particles contain at least one of tetragonal zirconia and cubic zirconia, and an average secondary particle size of the zirconia particles is less than 80 nm.