公开(公告)号：US11226231B1

公开(公告)日：2022-01-18

申请号：US16911950

申请日：2020-06-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Akhilesh R. Jaiswal ,  Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  David C. Pritchard

IPC: G01J1/44 ,  H01L43/04 ,  H04N5/374 ,  H04N5/359 ,  H01L43/06 ,  G02F1/19 ,  H01L27/22

Abstract: An image sensor includes an array of optically switchable magnetic tunnel junctions (MTJs) arranged in columns and rows. The image sensor has first lines of transparent conductive material and second lines of conductive material. Each first line is in contact with the free layers of the MTJs in a corresponding row. Each second line is electrically connected to the fixed layers MTJs in a corresponding column. The first lines are concurrently exposable to radiation. The first and second lines are selectively biasable. In a global reset operation, biasing conditions are such that all MTJs are switched to an anti-parallel state. In a global sense operation, biasing conditions are such that, depending upon the intensity of radiation received at those portions of the first lines in contact with MTJs, the MTJs may switch to a parallel state. In selective read operations, biasing conditions are such that stored data values in the MTJs can be read.

公开(公告)号：US11722298B2

公开(公告)日：2023-08-08

申请号：US17020895

申请日：2020-09-15

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Romain H. A. Feuillette ,  David C. Pritchard ,  Bernhard J. Wunder ,  Elizabeth Strehlow

IPC: H04L9/08 ,  H04L9/32

CPC classification number: H04L9/0869 ,  H04L9/0825 ,  H04L9/0894 ,  H04L9/3278 ,  H04L9/3297 ,  H04L2209/12

Abstract: Methods and systems generate seeds for public-private key pairs by determining a timestamp value associated with a process design kit (PDK) when a user of the PDK triggers a tool of the PDK while designing an integrated circuit device to have a physical unclonable function device (PUF). The methods and systems generate a first value by mapping the timestamp value to data of the user, generate a second value by mapping the timestamp value to configuration data of the PDK, and generate a third value by mapping the timestamp value to layout data of the PDK. A random number is then generated by applying a function to the first value, the second value, and the third value. A public-private encryption key pair is generated using the random number as a first seed number and using a second number generated by the number generation device as a second seed number.

公开(公告)号：US20250040237A1

公开(公告)日：2025-01-30

申请号：US18358157

申请日：2023-07-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Vitor A. Vulcano Rossi ,  Anton V. Tokranov ,  Hong Yu ,  David C. Pritchard

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/66

Abstract: An integrated circuit includes a fin having a height and a width under a gate of a selected fin-type field effect transistor (FinFET) that is less than the height and width along a remainder of the fin including under gates and for source/drain regions of other FinFETs. The IC includes a first FinFET having a first gate over a fin having a first height and a first width under the first gate, and a second FinFET in the fin adjacent to the first FinFET. The second FinFET has a second gate over the fin, and the fin has, under the second gate only, a second height less than the first height and a second width less than the first width. The resulting reduced channel height and width for the second FinFET increases gate control and reduces gate leakage, which is beneficial for ultra-low current leakage (ULL) devices.

公开(公告)号：US11913971B2

公开(公告)日：2024-02-27

申请号：US17183432

申请日：2021-02-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Romain H. A. Feuillette ,  David C. Pritchard ,  Elizabeth Strehlow ,  James P. Mazza

IPC: G01P15/00 ,  G01C9/24 ,  G01C9/06 ,  G01C9/20 ,  G01P15/18 ,  G01C9/18

CPC classification number: G01P15/006 ,  G01C9/06 ,  G01C9/20 ,  G01C9/24 ,  G01P15/18 ,  G01C2009/182

Abstract: Disclosed are a motion-sensitive field effect transistor (MSFET), a motion detection system, and a method. The MSFET includes a gate structure with a reservoir containing conductive fluid and gate electrode(s). Given position(s) of the gate electrode(s) and a fill level of the fluid within the reservoir, contact between the gate electrode(s) and the fluid depends upon the orientation the MSFET channel region relative to the top surface of the conductive fluid and the orientation of the MSFET channel region relative to the top surface of the conductive fluid depends upon position in space and/or movement of the MSFET and, particularly, position in space and/or movement of the chip on which the MSFET is formed. An electrical property of the MSFET in response to specific bias conditions varies depending on whether or not or to what extent the gate electrode(s) contact the fluid and is, thus, measurable for sensing chip motion.

公开(公告)号：US20220268805A1

公开(公告)日：2022-08-25

申请号：US17183432

申请日：2021-02-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Romain H.A. Feuillette ,  David C. Pritchard ,  Elizabeth Strehlow ,  James P. Mazza

IPC: G01P15/00

Abstract: Disclosed are a motion-sensitive field effect transistor (MSFET), a motion detection system, and a method. The MSFET includes a gate structure with a reservoir containing conductive fluid and gate electrode(s). Given position(s) of the gate electrode(s) and a fill level of the fluid within the reservoir, contact between the gate electrode(s) and the fluid depends upon the orientation the MSFET channel region relative to the top surface of the conductive fluid and the orientation of the MSFET channel region relative to the top surface of the conductive fluid depends upon position in space and/or movement of the MSFET and, particularly, position in space and/or movement of the chip on which the MSFET is formed. An electrical property of the MSFET in response to specific bias conditions varies depending on whether or not or to what extent the gate electrode(s) contact the fluid and is, thus, measurable for sensing chip motion.

公开(公告)号：US11239087B2

公开(公告)日：2022-02-01

申请号：US16662091

申请日：2019-10-24

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Heng Yang ,  David C. Pritchard ,  George J. Kluth ,  Anurag Mittal ,  Hongru Ren ,  Manjunatha G. Prabhu ,  Kai Sun ,  Neha Nayyar ,  Lixia Lei

IPC: H01L27/12 ,  H01L21/308 ,  H01L21/84 ,  H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L21/02

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to devices with slotted active regions and methods of manufacture. The method includes: forming a mandrel on top of a diffusion region comprising a diffusion material; forming a first material over the mandrel and the diffusion region; removing the mandrel to form multiple spacers each having a thickness; depositing a second material over the spacers and the diffusion material; and forming slots in the diffusion region by removing a portion of the second material over the diffusion region and the underlying diffusion material.

公开(公告)号：US20210404867A1

公开(公告)日：2021-12-30

申请号：US16911950

申请日：2020-06-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Akhilesh R. Jaiswal ,  Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  David C. Pritchard

IPC: G01J1/44 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H04N5/374 ,  H04N5/359

Abstract: An image sensor includes an array of optically switchable magnetic tunnel junctions (MTJs) arranged in columns and rows. The image sensor has first lines of transparent conductive material and second lines of conductive material. Each first line is in contact with the free layers of the MTJs in a corresponding row. Each second line is electrically connected to the fixed layers MTJs in a corresponding column. The first lines are concurrently exposable to radiation. The first and second lines are selectively biasable. In a global reset operation, biasing conditions are such that all MTJs are switched to an anti-parallel state. In a global sense operation, biasing conditions are such that, depending upon the intensity of radiation received at those portions of the first lines in contact with MTJs, the MTJs may switch to a parallel state. In selective read operations, biasing conditions are such that stored data values in the MTJs can be read.

公开(公告)号：US20240387668A1

公开(公告)日：2024-11-21

申请号：US18199054

申请日：2023-05-18

Applicant: GlobalFoundries U.S. Inc.

Inventor： Hong Yu ,  David C. Pritchard ,  Navneet K. Jain ,  James P. Mazza ,  Romain H. A. Feuillette

IPC: H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/417 ,  H01L29/775

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to nanosheet transistor structures with tunable channels and inner sidewall spacers and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets over a semiconductor substrate; a plurality of gate structures surrounding individual nanosheets of the plurality of semiconductor nanosheets, with a lower gate structure comprising a length at least equal to a length of each remaining gate structure of the plurality of gate structures; an inner sidewall spacer adjacent each of the plurality of gate structures; and source/drain regions on opposing sides of the plurality of gate structures, separated therefrom by the inner sidewall spacer.

公开(公告)号：US20230131403A1

公开(公告)日：2023-04-27

申请号：US17452175

申请日：2021-10-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： David C. Pritchard ,  Hongru Ren ,  Zhixing Zhao

IPC: H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/417 ,  H01L29/40

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure including a gate structure over a semiconductor layer. The gate structure includes a first portion having a first horizontal width, and a second portion laterally adjacent the first portion and having a second horizontal width less than the first horizontal width. A gate contact is on the first portion of the gate structure and is not on the second portion of the gate structure.