公开(公告)号：US09773646B2

公开(公告)日：2017-09-26

申请号：US15019990

申请日：2016-02-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroshi Oba ,  Yasuhiko Sugiyama ,  Mamoru Okabe

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/20 ,  H01J27/16 ,  H01J37/06

CPC classification number: H01J37/32522 ,  H01J27/16 ,  H01J37/06 ,  H01J37/08 ,  H01J37/20 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32568 ,  H01J37/32807 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; a plasma generation chamber connected to the gas introduction chamber and made of a dielectric material; a coil wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; an envelope surrounding the gas introduction chamber, the plasma generation chamber and the coil; and insulating liquid filled inside the gas introduction chamber, the plasma generation chamber and the envelope to immerse the coil and having an dielectric strength voltage relatively greater than that of the envelope and the same dielectric dissipation factor as the plasma generation chamber.

公开(公告)号：US09773637B2

公开(公告)日：2017-09-26

申请号：US15019987

申请日：2016-02-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroshi Oba ,  Yasuhiko Sugiyama ,  Mamoru Okabe

IPC: H01J37/08 ,  H05H1/30 ,  H05H1/46

CPC classification number: H01J37/08 ,  H01J2237/006 ,  H01J2237/061 ,  H05H1/30 ,  H05H1/46 ,  H05H2001/4667

Abstract: A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.