公开(公告)号：US10727088B2

公开(公告)日：2020-07-28

申请号：US15284668

申请日：2016-10-04

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu Morimoto ,  Yasuo Ohgoshi ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32

Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

公开(公告)号：US10522331B2

公开(公告)日：2019-12-31

申请号：US15333669

申请日：2016-10-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasuo Ohgoshi ,  Michikazu Morimoto ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

公开(公告)号：US10600619B2

公开(公告)日：2020-03-24

申请号：US15091730

申请日：2016-04-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

公开(公告)号：US20160307765A1

公开(公告)日：2016-10-20

申请号：US15196284

申请日：2016-06-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ze Shen ,  Tetsuo Ono ,  Hisao Yasunami

IPC: H01L21/3065 ,  H01L21/02

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32201 ,  H01L21/02532

Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.

Abstract translation: 提供了一种用于相对于层叠膜中的每个Si层选择性地各Siige层蚀刻每个SiGe层的干蚀刻方法。 层叠膜可以交替地层叠Si层和SiGe层。 可以使用NF 3气体通过脉冲调制射频功率产生的等离子体等离子体蚀刻每个SiGe层。

公开(公告)号：US08969211B2

公开(公告)日：2015-03-03

申请号：US13960831

申请日：2013-08-07

Applicant: Hitachi High-Technologies Corporation

Inventor： Satoru Muto ,  Tetsuo Ono ,  Yasuo Ohgoshi ,  Hirofumi Eitoku

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/3065

CPC classification number: H01J37/32137 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67069 ,  H01L29/66795

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Abstract translation: 本发明提供一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括等离子体处理室，其中等离子体处理样品，提供用于产生等离子体的第一射频电力的第一射频电源和第二无线电 其中所述等离子体处理方法包括以下步骤：通过第一脉冲对所述第一射频功率进行调制;其中，所述等离子体处理方法包括以下步骤： 并且通过逐渐控制作为等离子体处理时间的第一脉冲的占空比来控制血浆解离状态以产生期望的解离状态。

公开(公告)号：US08889024B2

公开(公告)日：2014-11-18

申请号：US14248844

申请日：2014-04-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomoyuki Watanabe ,  Michikazu Morimoto ,  Mamoru Yakushiji ,  Tetsuo Ono

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32132

Abstract: A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.

公开(公告)号：US11658011B2

公开(公告)日：2023-05-23

申请号：US16749180

申请日：2020-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01J37/32266 ,  H01J37/3266 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/67069 ,  H01L22/26 ,  H01J2237/2485 ,  H01J2237/334

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

公开(公告)号：US11417501B2

公开(公告)日：2022-08-16

申请号：US15260512

申请日：2016-09-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Masayuki Shiina ,  Naoki Yasui ,  Tetsuo Ono

IPC: H01J37/32 ,  H01L21/67 ,  H01L29/66 ,  H01L21/3213

Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.

公开(公告)号：US11018014B2

公开(公告)日：2021-05-25

申请号：US15196284

申请日：2016-06-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ze Shen ,  Tetsuo Ono ,  Hisao Yasunami

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02

Abstract: A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated film can include Si layers and SiGe layers alternately and repeatedly laminated. Each of the SiGe layers can be plasma-etched with plasma generated by a pulse-modulated radio frequency power using NF3 gas.

公开(公告)号：US10121640B2

公开(公告)日：2018-11-06

申请号：US14603187

申请日：2015-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Satoru Muto ,  Tetsuo Ono ,  Yasuo Ohgoshi ,  Hirofumi Eitoku

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/311 ,  H01L21/3213 ,  H01L29/66

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.