公开(公告)号：US20180090345A1

公开(公告)日：2018-03-29

申请号：US15468259

申请日：2017-03-24

Applicant: Hitachi High-Technologies Corporation

Inventor： Yutaka KOUZUMA ,  Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kenetsu YOKOGAWA ,  Tomoyuki WATANABE

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/3211 ,  H01J37/32724 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/67115

Abstract: A vacuum processing apparatus includes a processing chamber inside a vacuum vessel, a plasma forming chamber above, a dielectric plate member having multiple through-holes for introducing particles of plasma to the processing chamber between the processing chamber and the plasma forming chamber above a sample stage upper surface in the processing chamber, heating lamp arranged around an outer periphery of the plate member to irradiate an electromagnetic wave to the wafer to heat, and a ring-shaped window member for transmitting the electromagnetic wave from the lamp. The apparatus performs, from the through-holes to the wafer, supplying particles of plasma formed in the plasma forming chamber to form a reaction product, extinguishing the plasma and heating the wafer to desorb the product, and supplying particles, formed in the plasma forming chamber, of the plasma of cleaning gas to the plasma forming chamber, the processing chamber, and the window member.

公开(公告)号：US20190198299A1

公开(公告)日：2019-06-27

申请号：US16110081

申请日：2018-08-23

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Tomoyuki WATANABE ,  Yutaka KOUZUMA ,  Takumi TANDOU ,  Kenetsu YOKOGAWA ,  Hiroshi ITO

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

Abstract: Provided is a plasma processing apparatus including: a processing chamber; a sample stage placed inside the processing chamber; a processing gas supply unit which supplies processing gas into the processing chamber; a high-frequency power supply which supplies an electric field inside the processing chamber; an electrostatic chuck unit disposed on the sample stage in which openings to flow heat transfer gas are formed; a refrigerant supply unit which supplies a refrigerant inside the sample stage; and a control unit, wherein the control unit controls a heat transfer gas supply unit to control the temperature of a wafer depending on a plurality of processes for processing the wafer by switching a flow rate of the heat transfer gas or the type of the heat transfer gas flowing out of the openings between a concave portion formed in the electrostatic chuck unit and the wafer attracted to the electrostatic chuck unit.

公开(公告)号：US20180122665A1

公开(公告)日：2018-05-03

申请号：US15718948

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20130157470A1

公开(公告)日：2013-06-20

申请号：US13664940

申请日：2012-10-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomoyuki WATANABE ,  Michikazu MORIMOTO ,  Mamoru YAKUSHIJI ,  Tetsuo ONO

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32132

Abstract: A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.

Abstract translation: 提供了一种等离子体蚀刻方法，其可以提供与现有技术相比可以提高要蚀刻的膜的蚀刻选择比与不同于被蚀刻的膜的膜的蚀刻选择比。 本发明提供了一种等离子体蚀刻方法，用于选择性地蚀刻待蚀刻的膜以与要蚀刻的膜不同的膜，其中使用能够产生沉积膜的气体进行待蚀刻的膜的等离子体蚀刻 包含与不同胶片的组分相似的部件。