公开(公告)号：US20210358760A1

公开(公告)日：2021-11-18

申请号：US16495515

申请日：2019-02-01

Applicant: Hitachi High-Technologies Corporation

Inventor： Sumiko FUJISAKI ,  Yoshihide YAMAGUCHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

公开(公告)号：US20200006079A1

公开(公告)日：2020-01-02

申请号：US16286262

申请日：2019-02-26

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Nobuya MIYOSHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Kazumasa OOKUMA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.

公开(公告)号：US20140264017A1

公开(公告)日：2014-09-18

申请号：US14289092

申请日：2014-05-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Eiko NAKAZAWA ,  Hiroyuki KOBAYASHI ,  Susumu KUWABATA

IPC: H01J37/20 ,  G01N23/04 ,  H01J37/26

CPC classification number: H01J37/20 ,  G01N1/2813 ,  G01N23/04 ,  G01N23/2251 ,  G01N2001/4027 ,  H01J37/26 ,  H01J37/261 ,  H01J37/3007 ,  H01J2237/2002 ,  H01J2237/20214 ,  H01J2237/204 ,  H01J2237/206

Abstract: Provided is means which enables observation of the shape of a specimen as it is without deforming the specimen. Observation is made by allowing a specimen-holding member having an opening (for example, microgrid and mesh) to hold an ionic liquid and charging a specimen thereto, to allow the specimen to suspend in the ionic liquid. Furthermore, in the proximity of the specimen-holding member, a mechanism of injecting an ionic liquid (ionic liquid introduction mechanism) and/or an electrode are provided. When a voltage is applied to the electrode, the specimen moves or deforms in the ionic liquid. How the specimen moves or deforms can be observed. Furthermore, in the proximity of specimen-holding member, an evaporation apparatus is provided to enable charge of the specimen into the ionic liquid while evaporating. Furthermore, in the proximity of the specimen-holding member, a microcapillary is provided to charge a liquid-state specimen into the ionic liquid. Note that the specimen-holding member is designed to be rotatable.

Abstract translation: 提供能够在不使样本变形的情况下观察样本的形状的装置。 通过允许具有开口的样本保持构件（例如，微网和网格）来保持离子液体并向其中充入试样以允许样品悬浮在离子液体中进行观察。 此外，在试样保持构件附近设置有注入离子液体（离子液体导入机构）和/或电极的机构。 当电极施加电压时，样品在离子液体中移动或变形。 可以观察样品移动或变形。 此外，在试样保持构件附近，设置蒸发装置，以使得能够在蒸发时将试样充入离子液体中。 此外，在样本保持部件附近，设置微毛细管，以将液态标本充入离子液体。 注意，试样保持构件被设计成可旋转。

公开(公告)号：US20210366721A1

公开(公告)日：2021-11-25

申请号：US16495366

申请日：2018-11-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Yutaka KOUZUMA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

Abstract: A substrate processing method for reducing a surface roughness of a semiconductor wafer by processing a film structure having at least two types of films beforehand disposed on the substrate, including steps of repeating an adsorption step of supplying activated particles into the processing chamber and allowing the particles to be adsorbed to a surface of a desirable film to be etched in the at least two types of films to allow the particles to combine with a material of the desirable film to form a reaction layer, a removal step of using plasma generated by supplying oxygen into the processing chamber to remove a deposit containing particles adhering to a surface of an undesirable film to be etched in the films, and a desorption step of desorbing and removing the reaction layer on the desirable film to be etched by heating the sample.

公开(公告)号：US20180122665A1

公开(公告)日：2018-05-03

申请号：US15718948

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20170018405A1

公开(公告)日：2017-01-19

申请号：US15210257

申请日：2016-07-14

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/321 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.

Abstract translation: 等离子体处理装置包括：处理室，其在具有由透明或半透明的电介质材料制成的侧壁的真空容器中被减压，处理室中的用于安装晶片的台，设置在侧壁的外侧的线圈， 提供用于在处理室中的级上形成等离子体的射频电力，设置在真空容器外部的线圈上方的灯，其将光辐射到晶片上;以及反射器，设置线圈并反射光以照射处理的内部 房间。

公开(公告)号：US20150185455A1

公开(公告)日：2015-07-02

申请号：US14657428

申请日：2015-03-13

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Akiko FUJISAWA ,  Hiroyuki KOBAYASHI ,  Eiko NAKAZAWA

IPC: G02B21/00

CPC classification number: G02B21/008 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/226

Abstract: A sample observation method of the present invention comprises a step of defining, with respect to an electron microscope image, an outline of an observation object with respect to a sample (3), or a plurality of points located along the outline, and a step of arranging a plurality of fields of view for an electron microscope along the outline, wherein electron microscope images of the plurality of fields of view that have been defined and arranged along the shape of the observation object through each of the above-mentioned steps are acquired. It is thus made possible to provide a sample observation method that is capable of selectively acquiring, with respect to observation objects of various shapes, an electron microscope image based on a field of view definition that is in accordance with the shape of the observation object, as well as an electron microscope apparatus that realizes such a sample observation method.

Abstract translation: 本发明的样本观察方法包括相对于电子显微镜图像定义关于样本（3）的观察对象的轮廓或沿着轮廓的多个点的步骤，以及步骤 沿着轮廓布置电子显微镜的多个视野，其中通过上述步骤沿着观察对象的形状定义和布置的多个视场的电子显微镜图像被获取 。 因此，能够提供一种能够根据与观察对象的形状相对应的视场定义，针对各种形状的观察对象选择性地获取电子显微镜图像的样本观察方法， 以及实现这种样品观察方法的电子显微镜装置。

公开(公告)号：US20210242030A1

公开(公告)日：2021-08-05

申请号：US16646057

申请日：2019-04-22

Applicant: Hitachi High-Technologies Corporation

Inventor： Kazunori SHINODA ,  Hiroto OTAKE ,  Hiroyuki KOBAYASHI ,  Kohei KAWAMURA ,  Masaru IZAWA

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  H01J37/32 ,  H01J37/18

Abstract: The present invention provides a plasma processing method or a plasma processing method, which allows the evenness of etching amounts to increase and the yield of processing to improve.
A method for etching a tungsten film includes: a first step of depositing a fluorocarbon layer and forming an intermediate layer that contains tungsten and fluorine and is self-limiting between the fluorocarbon layer and the tungsten film by supplying plasma of an organic gas containing fluorine to a base material having the tungsten film over at least a part of the surface; and a second step of removing the fluorocarbon layer and the intermediate layer by using plasma of an oxygen gas.

公开(公告)号：US20190237302A1

公开(公告)日：2019-08-01

申请号：US16378783

申请日：2019-04-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Kenji MAEDA ,  Yutaka KOUZUMA ,  Satoshi SAKAl ,  Masaru IZAWA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32339 ,  H01J37/32422 ,  H01J37/32522 ,  H01J37/32724 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/6719

Abstract: In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

公开(公告)号：US20190067032A1

公开(公告)日：2019-02-28

申请号：US15906862

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazunori SHINODA ,  Naoyuki KOFUJI ,  Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kohei KAWAMURA ,  Masaru IZAWA ,  Kenji ISHIKAWA ,  Masaru HORI

IPC: H01L21/3213 ,  H01L27/115 ,  H01L21/67

CPC classification number: H01L21/32138 ,  H01J37/00 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/115 ,  H01L27/11556

Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.