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    PLASMA ETCHING METHOD AND PLASMA PROCESSING APPARATUS
    1.
    发明申请
    PLASMA ETCHING METHOD AND PLASMA PROCESSING APPARATUS 有权

    公开(公告)号：US20210358760A1

    公开(公告)日：2021-11-18

    申请号：US16495515

    申请日：2019-02-01

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Sumiko FUJISAKI ,  Yoshihide YAMAGUCHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Yutaka KOUZUMA ,  Masaru IZAWA

    IPC: H01L21/311 ,  H01L21/3065 ,  H01J37/32

    Abstract: Provided is a plasma etching method which enables etching with high accuracy while controlling and reducing surface roughness of a transition metal film. The etching is performed for the transition metal film, which is formed on a sample and contains a transition metal element, by a first step of isotropically generating a layer of transition metal oxide on a surface of the transition metal film while a temperature of the sample is maintained at 100° C. or lower, a second step of raising the temperature of the sample to a predetermined temperature of 150° C. or higher and 250° C. or lower while a complexation gas is supplied to the layer of transition metal oxide, a third step of subliming and removing a reactant generated by an reaction between the complexation gas and the transition metal oxide formed in the first step while the temperature of the sample is maintained at 150° C. or higher and 250° C. or lower, and a fourth step of cooling the sample.

    PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
    2.
    发明申请
    PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS 审中-公开

    公开(公告)号：US20200006079A1

    公开(公告)日：2020-01-02

    申请号：US16286262

    申请日：2019-02-26

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Nobuya MIYOSHI ,  Hiroyuki KOBAYASHI ,  Kazunori SHINODA ,  Kohei KAWAMURA ,  Kazumasa OOKUMA ,  Yutaka KOUZUMA ,  Masaru IZAWA

    IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67

    Abstract: An plasma etching method for etching a film layer includes a plurality of times repeating a step set including a first step of introducing a gas containing hydrogen fluoride into a processing chamber and supplying hydrogen fluoride molecules to the surface of an oxide film, a second step of exhausting the interior of the processing chamber in vacuum to remove the hydrogen fluoride, and a third step of introducing a gas containing hydrogen nitride into the processing chamber and supplying hydrogen nitride to the surface of the oxide film to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer, and removing the compound layer formed on the surface of the film layer. Foreign object contamination is prevented by inhibiting mixing of hydrogen fluoride gas and hydrogen nitride gas, and the etching amount is controlled by the number of times of repeating application thereof.

    SAMPLE CLEANING APPARATUS AND SAMPLE CLEANING METHOD
    4.
    发明申请
    SAMPLE CLEANING APPARATUS AND SAMPLE CLEANING METHOD 审中-公开
    样品清洗装置和样品清洗方法

    公开(公告)号：US20160079055A1

    公开(公告)日：2016-03-17

    申请号：US14625898

    申请日：2015-02-19

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Naoyuki KOFUJI ,  Tadamitsu KANEKIYO ,  Kazunori SHINODA ,  Junichi TANAKA

    IPC: H01L21/02 ,  B08B7/02 ,  B06B3/00

    CPC classification number: H01L21/02068 ,  B06B3/00 ,  B08B7/028 ,  H01L21/02046

    Abstract: A sample cleaning apparatus includes a vibrating unit which ultrasonically vibrates a sample while the sample is mounted and held on a sample stage arranged in a processing chamber, the vibrating unit including: a dielectric film which is arranged on the sample stage and above which the sample is mounted; electrodes which are arranged adjacent to each other in the dielectric film; and a radio frequency power supply which supplies radio frequency power at frequencies in a prescribed range to the electrodes while the sample is hold on the sample stage; and a gas supply unit which forms a gas flow in a direction along a surface of the sample, so that particles are expelled.

    Abstract translation: 一种样品清洁装置，包括：振动单元，其在样本被安装并且保持在布置在处理室中的样品台上时超声振动样本，所述振动单元包括：电介质膜，其布置在所述样品台上方， 被安装 在电介质膜中相邻设置的电极; 以及射频电源，其在样本保持在所述样品台上的同时，将规定范围的频率的射频功率提供给所述电极; 以及气体供给单元，其在沿着样品表面的方向上形成气流，使得颗粒被排出。

    PLASMA PROCESSING METHOD
    9.
    发明申请
    PLASMA PROCESSING METHOD 审中-公开
    等离子体处理方法

    公开(公告)号：US20160079073A1

    公开(公告)日：2016-03-17

    申请号：US14626909

    申请日：2015-02-19

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Miyako MATSUI ,  Kenetsu YOKOGAWA ,  Tadamitsu KANEKIYO ,  Tetsuo ONO ,  Kazunori SHINODA

    IPC: H01L21/3065

    CPC classification number: H01L21/32137 ,  B81C1/00531 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02337 ,  H01L21/30621 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32135 ,  H01L21/32136

    Abstract: A plasma processing method includes: a first step of introducing a gas having reactivity with a film to be processed disposed in advance on a top surface of a wafer into a processing chamber to form an adhesion layer on the film; a second step of expelling a part of the gas remaining in the processing chamber while supply of the gas having reactivity is stopped; a third step of introducing a rare gas into the processing chamber to form a plasma and desorbing reaction products of the adhesion layer and the film to be processed using particles and vacuum ultraviolet light in the plasma; and a fourth step of expelling the reaction products while the plasma is not formed.

    Abstract translation: 等离子体处理方法包括：将预先设置的待加工膜与反应性的气体引入晶片的上表面的第一步骤，以在膜上形成粘合层; 在停止具有反应性的气体的供给的同时排出残留在处理室中的一部分气体的第二步骤; 将稀有气体引入处理室中以在等离子体中形成等离子体并使用粒子和真空紫外光解吸粘合层和待加工膜的反应产物的第三步骤; 以及在不形成等离子体时排出反应产物的第四步骤。

    SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
    10.
    发明申请
    SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 有权

    公开(公告)号：US20210366721A1

    公开(公告)日：2021-11-25

    申请号：US16495366

    申请日：2018-11-14

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Yutaka KOUZUMA ,  Masaru IZAWA

    IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32

    Abstract: A substrate processing method for reducing a surface roughness of a semiconductor wafer by processing a film structure having at least two types of films beforehand disposed on the substrate, including steps of repeating an adsorption step of supplying activated particles into the processing chamber and allowing the particles to be adsorbed to a surface of a desirable film to be etched in the at least two types of films to allow the particles to combine with a material of the desirable film to form a reaction layer, a removal step of using plasma generated by supplying oxygen into the processing chamber to remove a deposit containing particles adhering to a surface of an undesirable film to be etched in the films, and a desorption step of desorbing and removing the reaction layer on the desirable film to be etched by heating the sample.

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