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    Adaptive beam forming antenna system using a tunable impedance surface
    3.
    发明申请
    Adaptive beam forming antenna system using a tunable impedance surface 有权
    自适应波束形成天线系统使用可调阻抗表面

    公开(公告)号：US20040263408A1

    公开(公告)日：2004-12-30

    申请号：US10844104

    申请日：2004-05-11

    Applicant: HRL LABORATORIES, LLC

    Inventor： Daniel F. Sievenpiper ,  James H. Schaffner ,  Gregory L. Tangonan

    IPC: H01Q003/00 ,  H01Q003/24

    CPC classification number: H01Q3/46 ,  H01Q19/104

    Abstract: A method of and apparatus for beam steering. A feed horn is arranged so that the feed horn illuminates a tunable impedance surface comprising a plurality of individually tunable resonator cells, each resonator element having a reactance tunable by a tuning element associated therewith. The tuning elements associated with the tunable impedance surface are adjusted so that the resonances of the individually tunable resonator cells are varied in a sequence and the resonances of the individually tunable resonator cells are set to values which improve transmission of information via the tunable impedance surface and the feed horn.

    Abstract translation: 一种用于光束转向的方法和装置。 馈电喇叭布置成使得馈电喇叭照亮包括多个单独可调谐谐振器单元的可调谐阻抗表面，每个谐振器元件具有可由与其相关联的调谐元件调谐的电抗。 调节与可调谐阻抗表面相关联的调谐元件，使得单独可调谐谐振器单元的谐振以一个顺序变化，并且可单独调谐的谐振器单元的谐振被设置为改善经由可调谐阻抗表面的信息传输的值， 饲料角。

    MONOLITHIC SINGLE POLE DOUBLE THROW RF MEMS SWITCH
    5.
    发明申请
    MONOLITHIC SINGLE POLE DOUBLE THROW RF MEMS SWITCH 失效
    单声道单通道双通道RF MEMS开关

    公开(公告)号：US20020098613A1

    公开(公告)日：2002-07-25

    申请号：US09767321

    申请日：2001-01-23

    Applicant: HRL Laboratories, LLC

    Inventor： Robert Y. Loo ,  James H. Schaffner ,  Adele E. Schmitz ,  Tsung-Yuan Hsu ,  Franklin A. Dolezal ,  Gregory L. Tangonan

    IPC: H01L021/00

    CPC classification number: H01H59/0009

    Abstract: Apparatus for a micro-electro-mechanical switch that provides single pole, double throw switching action. The switch comprises a single RF input line and two RF output lines. The switch additionally comprises two armatures, each mechanically connected to a substrate at one end and having a conducting transmission line at the other end with a suspended biasing electrode located on top of or within a structural layer of the armature. Each conducting transmission line has conducting dimples that protrude beyond the bottom of the armature carrying the conducting transmission line. Closure of an armature causes the dimples of the corresponding conducting transmission line to mechanically and electrically engage the RF input line and the corresponding RF output line, thus directing RF energy from the RF input line to the selected RF output line.

    Abstract translation: 用于微机电开关的装置，其提供单极双掷切换动作。 该开关包括单个RF输入线和两个RF输出线。 开关另外包括两个电枢，每个电枢在一端机械地连接到基板，并且在另一端处具有导电传输线，其中悬置的偏置电极位于电枢的结构层的顶部或内部。 每个导电传输线具有突出超过承载导电传输线的电枢的底部的导电凹坑。 衔铁的闭合使相应的导电传输线的凹坑机械地和电气地接合RF输入线和相应的RF输出线，从而将RF能量从RF输入线引导到所选择的RF输出线。

    RF MEMS switch matrix
    6.
    发明申请
    RF MEMS switch matrix 失效
    射频MEMS开关矩阵

    公开(公告)号：US20040095205A1

    公开(公告)日：2004-05-20

    申请号：US10407056

    申请日：2003-04-03

    Applicant: HRL LABORATORIES, LLC

    Inventor： James H. Schaffner ,  Robert Y. Loo

    IPC: H01P001/10

    CPC classification number: H01P1/127 ,  H01H59/0009 ,  H01H67/22

    Abstract: A broadband multiple input, multiple output switch matrix. The switch matrix comprises multiple crosspoint switch element tiles. Each tile comprises RF MEMS switches disposed on a substrate to provide a crosspoint switching capability. The crosspoint switch element tiles are disposed in a flip-chip manner on the upper side of an RF substrate that provides RF connectivity between the various crosspoint switch element tiles. A bias line substrate disposed on the lower side of the RF substrate receives control signals for the crosspoint switch element tiles and routes the signals through the RF substrate using vias in the RF substrate.

    Abstract translation: 宽带多输入，多输出开关矩阵。 开关矩阵包括多个交叉点开关元件瓦片。 每个瓦片包括设置在基板上的RF MEMS开关以提供交叉点切换能力。 交叉点开关元件瓦片以倒装芯片的方式设置在提供各种交叉点开关元件瓦片之间的RF连接的RF基板的上侧。 设置在RF基板的下侧的偏置线基板接收用于交叉点开关元件瓦片的控制信号，并且使用RF基板中的通孔将信号路由到RF基板。

    ANTENNA SYSTEM FOR COMMUNICATING SIMULTANEOUSLY WITH A SATELLITE AND A TERRESTRIAL SYSTEM
    7.
    发明申请
    ANTENNA SYSTEM FOR COMMUNICATING SIMULTANEOUSLY WITH A SATELLITE AND A TERRESTRIAL SYSTEM 有权
    天线系统同时与卫星和地面系统进行通信

    公开(公告)号：US20030052834A1

    公开(公告)日：2003-03-20

    申请号：US09905795

    申请日：2001-07-13

    Applicant: HRL Laboratories, LLC

    Inventor： Daniel F. Sievenpiper ,  Hui-Pin Hsu ,  James H. Schaffner ,  Gregory L. Tangonan

    IPC: H01Q015/02

    CPC classification number: H01Q21/26 ,  H01Q15/0013 ,  H01Q21/245

    Abstract: An antenna system for receiving both circularly polarized electromagnetic signals and linearly polarized electromagnetic signals, the circularly polarize signals arriving at the antenna system from a direction normal or oblique to a major surface of the antenna system and the linearly polarized signals arriving at the planar antenna system from a direction acute to said major surface. The antenna system includes a high impedance surface and a plurality of antenna elements disposed on said high impedance surface, the plurality antenna elements arranged in a pattern on said surface such first selected ones of said antenna elements are responsive to circular polarization and second selected ones of said antenna elements are responsive to linear polarization.

    Abstract translation: 一种用于接收圆偏振电磁信号和线偏振电磁信号的天线系统，从天线系统的正常或倾斜方向到达天线系统的圆偏振信号和到达平面天线系统的线偏振信号 从尖锐的方向到所述主表面。 所述天线系统包括高阻抗表面和设置在所述高阻抗表面上的多个天线元件，所述多个天线元件以所述表面上的图案布置，所述天线元件中的所述第一选定天线元件响应圆极化和第二选择的 所述天线元件对线性极化有反应。

    Plano-convex rotman lenses, an ultra wideband array employing a hybrid long slot aperture and a quasi-optic beam former
    8.
    发明申请
    Plano-convex rotman lenses, an ultra wideband array employing a hybrid long slot aperture and a quasi-optic beam former 失效
    平凸式旋转镜头，采用混合长缝孔的超宽带阵列和准光束成形器

    公开(公告)号：US20040207567A1

    公开(公告)日：2004-10-21

    申请号：US10773942

    申请日：2004-02-06

    Applicant: HRL LABORATORIES, LLC

    Inventor： Daniel F. Sievenpiper ,  James H. Schaffner

    IPC: H01Q015/08

    CPC classification number: H01Q25/008 ,  H01Q15/08 ,  H01Q19/062 ,  H01Q21/064

    Abstract: A multiple slot antenna wherein the slots are arranged in a planar configuration and therein the antenna further comprises a plurality of plano-convex Rotman lenses disposed in a stack, each plano-convex Rotman lens in said stack having a major surface disposed at an angle to the planar configuration of the slots of the antenna, with planar portions of the each Rotman lens defining a portion of each one of the slots of the antenna.

    Abstract translation: 一种多缝天线，其中所述槽被布置成平面构型，并且其中所述天线还包括设置在堆叠中的多个平凸的Rotman透镜，所述堆叠中的每个平凸的Rotman透镜具有以与 天线的槽的平面配置，每个Rotman透镜的平面部分限定天线的每个槽的一部分。

    CMOS-compatible MEM switches and method of making
    9.
    发明申请
    CMOS-compatible MEM switches and method of making 失效

    公开(公告)号：US20020055260A1

    公开(公告)日：2002-05-09

    申请号：US10016894

    申请日：2001-12-13

    Applicant: HRL Laboratories

    Inventor： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    IPC: H01L021/302

    CPC classification number: B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    Abstract: A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

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