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1.发明授权Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant 失效用于正工作光致抗蚀剂的显影溶液包含tmah和非离子表面活性剂
公开(公告)号：US4833067A
公开(公告)日：1989-05-23
申请号：US246930
申请日：1988-09-19
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metallic ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an acetylene alcohol. In comparison with conventional developing solutions, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer, higher sensitivity and smaller temperature dependency of development and less drawbacks due to foaming of the solution.
摘要翻译： 本发明的正性光致抗蚀剂组合物的水性显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，为50-5000ppm的乙炔醇。 与传统的显影液相比，本发明的显影溶液在图案化光刻胶层的均匀性方面是有利的，更高的灵敏度和更小的显影温度依赖性以及由于溶液的发泡而引起的缺点。
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2.发明授权Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant 失效用于正性光致抗蚀剂的显影液，其包含无金属离子的有机碱和阴离子表面活性剂
公开(公告)号：US4784937A
公开(公告)日：1988-11-15
申请号：US892646
申请日：1986-08-04
申请人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hatsuyuki Tanaka , Hidekatsu Kohara , Yoshiyuki Sato , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
IPC分类号： G03F7/32
CPC分类号： G03F7/322
摘要： The aqueous developing solution of the invention for positive-working photoresist compositions contains, in addition to an organic basic compound free from metal ions, such as tetramethyl ammonium hydroxide and choline, as the principal ingredient, from 50 to 5000 ppm of an anionic or non-ionic fluorine-containing surface active agent of specific types. In comparison with conventional developing solutions without such a surface active agent, the inventive developing solution is advantageous in the uniformity of the patterned photoresist layer and higher sensitivity and smaller temperature dependency of development.
摘要翻译： 本发明的正性光致抗蚀剂组合物的含水显影液除了含有金属离子的有机碱性化合物外，还含有氢氧化四甲基铵和胆碱作为主要成分，含有50-5000ppm阴离子或非离子表面活性剂 非离子型含氟表面活性剂。 与没有这种表面活性剂的常规显影溶液相比，本发明的显影溶液在图案化光致抗蚀剂层的均匀性方面是有利的，并且具有较高的灵敏度和较小的显影温度依赖性。
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3.发明授权Positive-working photoresist containing o-naphthoquinone diazide sulfonic acid ester and novolak resin consisting of 35 to 43% m-cresol and 65 to 57% p-cresol with substantial absence of o-cresol 失效含有邻苯二酚二叠氮磺酸酯和酚醛清漆树脂的正性光致抗蚀剂由35至43％的间甲酚和65至57％的对甲酚组成，基本上不存在邻甲酚
公开(公告)号：US5281508A
公开(公告)日：1994-01-25
申请号：US935131
申请日：1992-08-21
申请人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
发明人： Hidekatsu Kohara , Hatsuyuki Tanaka , Masanori Miyabe , Yoshiaki Arai , Shingo Asaumi , Toshimasa Nakayama , Akira Yokota , Hisashi Nakane
摘要： A positive-working photoresist composition suitable for fine patterning in the manufacture of semiconductor devices, e.g., VLSIs, with high fidelity is proposed. The composition comprises 100 parts by weight of a cresol novolac resin and 25-60 parts by weight of a naphthoquinone diazide sulfonic acid ester as the photosensitive component while the cresol novolac resin component is prepared from a mixture of cresol isomers composed of 35-43% of m-cresol and 65-57% of p-cresol with substantial absence of o-cresol or composed of 35-43% of m-cresol, 65-57% of p-cresol and 1% or less of o-cresol.
摘要翻译： 提出了适用于制造高保真度的半导体器件（例如VLSI）中的精细图案化的正性光致抗蚀剂组合物。 该组合物包含100重量份的甲酚酚醛清漆树脂和25-60重量份的萘醌二叠氮化物磺酸酯作为感光组分，而甲酚酚醛清漆树脂组分由由35-43％ 的间甲酚和65-57％的对甲酚，基本上没有邻甲酚或由35-43％的间甲酚，65-57％的对甲酚和1％或更少的邻甲酚组成。
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4.发明授权
公开(公告)号：US4174222A
公开(公告)日：1979-11-13
申请号：US881260
申请日：1978-02-27
申请人： Takashi Komine , Akira Yokota , Hisashi Nakane , Shingo Asaumi , Noboru Okazaki
发明人： Takashi Komine , Akira Yokota , Hisashi Nakane , Shingo Asaumi , Noboru Okazaki
CPC分类号： G03F7/022
摘要： A gallic acid alkyl ester or a gallic acid aryl ester is reacted in an inert solvent with 3 equivalents of naphthoquinone-(1,2)-diazido-(2)-sulfonyl chloride in the presence of an alkali to effect sulfonylation of 3 hydroxyl groups in the gallic acid moiety whereby a photodecomposable naphthoquinone-(1,2)-diazido-(2)-sulfonic acid ester is obtained. The new naphthoquinonediazido derivative thus obtained is mixed with an alkali-soluble phenol resin such as m-cresol novolac resin or phenol novolac resin to prepare a positive-type photoresist composition having high sensitivity and high resolving power as well as excellent dimensional accuracy and etching-resistance. In addition, this composition forms a good photosensitive film and can be a good ink receptor.
摘要翻译： 没食子酸烷基酯或没食子酸芳基酯在惰性溶剂中与3当量萘醌 - （1,2） - 叠氮基 - （2） - 磺酰氯在碱存在下反应，以实现3个羟基的磺酰化 在没食子酸部分中得到可光分解的萘醌 - （1,2） - 二叠氮基 - （2） - 磺酸酯。 将由此获得的新的萘醌二叠氮基衍生物与间甲酚酚醛清漆树脂或苯酚酚醛清漆树脂等碱溶性酚树脂混合，制备具有高灵敏度和高分辨能力的正型光致抗蚀剂组合物，以及优异的尺寸精度和蚀刻 - 抵抗性。 此外，该组合物形成良好的感光膜，并且可以是良好的油墨受体。
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公开(公告)号：US4385086A
公开(公告)日：1983-05-24
申请号：US100930
申请日：1979-12-06
申请人： Muneo Nakayama , Hisashi Nakane , Akira Yokota , Shingo Asaumi
发明人： Muneo Nakayama , Hisashi Nakane , Akira Yokota , Shingo Asaumi
CPC分类号： C09D5/00 , C03C17/004 , C03C17/23 , C09D4/00 , C23C18/1216 , C23C18/1241 , C23C18/1245 , C23C18/1283 , C03C2217/213 , C03C2217/78 , C03C2218/11
摘要： An efficient method is proposed for preventing leaching of contaminants from the surface of a solid, such as sodium ions from the surface of soda glass or nickel, chromium or iron from the surface of stainless steel in order to minimize detrimental contamination of highly pure substances in contact with the solid surface.The effect is basically obtained by providing a coating film of oxidized silicon on to the solid surface and the coating film is formed by applying a coating solution containing a hydroxysilane compound to the surface followed by baking of the coating layer at a temperature not lower than 150.degree. C., the coating solution being prepared by the equilibration reaction of an alkoxysilane with a carboxylic acid and an alcohol, of an acyloxysilane with an alcohol, or of an alkoxysilane with water in an alcohol where the molar ratios of the individual reactants are in the specified ranges.
摘要翻译： 提出了一种有效的方法，用于防止污染物从不锈钢表面的钠玻璃或镍，铬或铁表面的固体表面浸出，以最大限度地减少高纯度物质的有害污染 与固体表面接触。 通过在固体表面上设置氧化硅的涂膜，基本上得到效果，通过在表面涂布含有羟基硅烷化合物的涂布溶液，然后在不低于150℃的温度下进行涂布，形成涂膜 ℃，通过烷基硅烷与羧酸和醇与丙烯氧基硅烷与醇或烷氧基硅烷与醇在醇中的平衡反应制备的涂料溶液，其中各个反应物的摩尔比为 指定范围。
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公开(公告)号：US4844832A
公开(公告)日：1989-07-04
申请号：US149971
申请日：1988-02-03
IPC分类号： G03C11/00 , C09D9/00 , G03F7/42 , H01L21/027 , H01L21/30
摘要： The remover solution for photoresist layers comprises: (a) from 30 to 70% by weight of an aromatic hydrocarbon compound or a combination of aromatic hydrocarbon compounds having a flash point of 70.degree. C. or higher containing at least a half amount of a naphthalenic compound selected from the group consisting of naphthalene, methyl naphthalenes and dimethyl naphthalenes; (b) from 5 to 40% by weight of a phenolic compound; and (c) from 10 to 50% by weight of an arylsulfonic acid. The remover solution is effective for a variety of photoresist compositions with less problems in respect to the workers' health and danger of fire and explosion than conventional remover solutions.
摘要翻译： 光致抗蚀剂层的去除剂溶液包括：（a）30至70重量％的芳族烃化合物或闪点为70℃或更高的含至少一半的萘的芳族烃化合物的组合 选自萘，甲基萘和二甲基萘的化合物; （b）5〜40重量％的酚类化合物; 和（c）10至50重量％的芳基磺酸。 去除剂溶液对于各种光刻胶组合物是有效的，与常规去除剂溶液相比，相对于工人的健康和火灾和爆炸危险的问题较少。
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7.发明授权Positive-working O-quinone diazide photoresist composition with 2,3,4-trihydroxybenzophenone 失效具有2,3,4-三羟基二苯甲酮的正性O-醌二叠氮化合物光致抗蚀剂组合物
公开(公告)号：US4738915A
公开(公告)日：1988-04-19
申请号：US32952
申请日：1987-03-31
申请人： Takashi Komine , Shingo Asaumi , Akira Yokota , Hisashi Nakane
发明人： Takashi Komine , Shingo Asaumi , Akira Yokota , Hisashi Nakane
IPC分类号： G03C1/72 , G03F7/022 , H01L21/027 , G03C1/60
CPC分类号： G03F7/022
摘要： The invention provides an improvement over the conventional positive-working photoresist compositions comprising a novolac resin and an ester compound between 2,3,4-trihydroxybenzophenone and naphthoquinone-1,2-diazido-5-sulfonic acid in respect of scum formation in development and resistance of the patterned photoresist layer against heat and dry etching. The inventive composition comprises, in addition to the novolac resin and the ester compounds, 2,3,4-trihydroxybenzophenone in a specified amount relative to the ester compounds as a part of the photosensitive component which may be a reaction product obtained by the esterification reaction for the synthesis of the ester compounds containing unesterified 2,3,4-trihydroxybenzophenone.
摘要翻译： 本发明相对于在开发中的浮渣形成方面，相对于包含酚醛清漆树脂和2,3,4-三羟基二苯甲酮与萘醌-1,2-二叠氮基-5-磺酸之间的酯化合物的常规正性光致抗蚀剂组合物的改进， 图案化的光致抗蚀剂层对热和干蚀刻的电阻。 除酚醛清漆树脂和酯化合物之外，本发明组合物还包含相对于作为感光组分的一部分的酯化合物的特定量的2,3,4-三羟基二苯甲酮，其可以是通过酯化反应获得的反应产物 用于合成含有未酯化的2,3,4-三羟基二苯甲酮的酯化合物。
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8.发明授权Method of forming a positive resist pattern in photoresist of o-naphthoquinone diazide and bisazide with UV imaging exposure and far UV overall exposure 失效在邻苯二酚二叠氮化物和双叠氮化物的光致抗蚀剂中形成正型抗蚀剂图案的方法，其具有UV成像曝光和远紫外曝光
公开(公告)号：US4797348A
公开(公告)日：1989-01-10
申请号：US161213
申请日：1988-02-17
CPC分类号： G03F7/095
摘要： A dually photosensitive composition useful as a photoresist in the manufacture of ICs and the like electronic devices, which is positively photosensitive by exposure to ultraviolet in a relatively small dose but negatively photosensitive by exposure to ultraviolet in a substantially larger dose than above or by exposure to far ultraviolet light, is obtained by admixing a positive-type photoresist material comprising a novolac resin and an o-naphthoquinone diazide compound with a bisazide compound such as 4,4'-diazidodiphenyl sulfide. The inventive photosensitive composition provides a possibility of developing an ingenious technique for patterning of a photoresist layer on the substrate such as a checkboard-like patterned layer by use of a photomask of a line-and-space pattern.
摘要翻译： 在制造IC等电子装置中用作光致抗蚀剂的双重光敏组合物，其通过以相对较小的剂量暴露于紫外线但以相对较高的剂量暴露于紫外线但通过暴露于 通过将包含酚醛清漆树脂和邻萘醌二叠氮化合物的正型光致抗蚀剂材料与4,4'-二叠氮基二苯基硫化物等双叠氮化合物混合而得到。 本发明的光敏组合物提供了通过使用线间距图案的光掩模来开发用于图案化诸如棋盘状图案化层的基板上的光致抗蚀剂层的巧妙技术的可能性。
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公开(公告)号：US4902770A
公开(公告)日：1990-02-20
申请号：US52466
申请日：1987-05-20
申请人： Wataru Ishii , Shozo Miyazawa , Shinji Tsuchiya , Hisashi Nakane , Akira Yokota
发明人： Wataru Ishii , Shozo Miyazawa , Shinji Tsuchiya , Hisashi Nakane , Akira Yokota
摘要： The undercoating composition of the invention, useful for providing an undercoating layer for a top coat of a photosensitive resist layer on a substrate surface, comprises, as a principal ingredient thereof, a condensation product obtained by the condensation reaction between a hydroxy-substituted diphenylamine and a melamine compound substituted on the nitrogen atoms with methylol groups and/or alkoxymethyl groups. The undercoating obtained of the composition is highly resistant against the attack by the overcoating solution applied thereon so that the fidelity of the pattern reproduction by the photolithographic technique is greatly improved by virtue of the absence of any disorder at the interface between the undercoating and top coat layers. The advantage is further increased when the undercoating composition further comprises a photoextinctive agent, e.g. a dye, having absorptivity in the wave length region where the photosensitive resist of the top coat has sensitivity.
摘要翻译： 本发明的底涂层组合物可用作在基材表面上提供感光性抗蚀剂层的顶涂层的底涂层，其主要成分为通过羟基取代的二苯胺和 在氮原子上被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物。 获得的组合物的底漆对于施加在其上的外涂层溶液的侵蚀是高度抗性的，使得由于在底漆和面漆之间的界面处没有任何障碍，通过光刻技术的图案再现的保真度被大大提高 层。 当底涂层组合物还包含光致纤维素剂，例如， 染料，其表面涂层的光敏抗蚀剂具有敏感性的波长区域具有吸收性。
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公开(公告)号：US4588675A
公开(公告)日：1986-05-13
申请号：US672764
申请日：1984-11-19
申请人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Wataru Ishii
发明人： Hisashi Nakane , Akira Yokota , Mitsuo Yabuta , Wataru Ishii
CPC分类号： G03F7/36 , G03F7/38 , Y10S430/168
摘要： A method for high fidelity patterning of a photoresist layer involving a dry-process development by exposure to a plasma gas. A photoresist layer which had been irradiated in a pattern with actinic rays is heated at a temperature in the range from 200.degree. to 500.degree. C. by applying heat to the surface of the substrate opposite to the surface bearing the photoresist layer, for example, by placing the substrate on a hot plate with the uncoated surface in contact with the hot plate. Subsequent exposure to plasma gas gives a patterned resist layer with a very high residual film thickness.
摘要翻译： 涉及通过暴露于等离子体气体的干法显影的光致抗蚀剂层的高保真图案化的方法。 用光化射线照射的光致抗蚀剂层在200〜500℃的温度范围内，通过向与该光致抗蚀剂层的表面相反的表面施加热，例如， 通过将基板放置在热板上，使未涂覆的表面与热板接触。 随后暴露于等离子体气体得到具有非常高的残余膜厚度的图案化抗蚀剂层。
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