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13 条记录 (耗时 0.037 秒)

    MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material
    6.
    发明申请
    MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material 有权
    具有镨钛酸镨或氧化镨作为绝缘体材料的MIM / MIS结构

    公开(公告)号：US20110133303A1

    公开(公告)日：2011-06-09

    申请号：US11547578

    申请日：2005-04-08

    申请人： Gunther Lippert ,  Gerald Lippert

    发明人： Gunther Lippert ,  Gerald Lippert

    IPC分类号： H01L29/00

    CPC分类号： H01L27/0248 ,  H01L21/765 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component including a first integrated circuit in a substrate which is adapted to produce electrical signals with a high-frequency signal component, wherein the substrate is such that the high-frequency signal component can propagate on a substrate surface and/or in the substrate interior, a second integrated circuit in the same substrate which is such that its function can be compromised by high-frequency signals, and a countersignal circuit in the same substrate which is adapted to deliver an electrical countersignal which at least at a selected location of the substrate surface and/or the substrate interior attenuates or eliminates the high-frequency electrical signal component emanating from the first integrated circuit, wherein the countersignal circuit includes a receiver which is adapted to produce an electrical signal dependent on the instantaneous field strength of the high-frequency signal component, and a shielding transistor provided in the substrate and having a control electrode and a first field electrode and a second field electrode, whose control electrode is connected on the input side to the receiver and whose first and second field electrodes are acted upon with a predeterminable first and second electrical potential.

    摘要翻译： 一种半导体元件，包括在衬底中的第一集成电路，其适于产生具有高频信号分量的电信号，其中所述衬底使得所述高频信号分量可以在衬底表面和/或所述衬底中传播 内部，在相同基板中的第二集成电路，其功能可以被高频信号损害，以及在相同基板中的基准信号电路，其适于传递电信号，该电信号至少在所选择的位置处 衬底表面和/或衬底内部衰减或消除从第一集成电路发出的高频电信号分量，其中，该信号电路包括接收器，该接收器适于产生取决于高频电信号的瞬时场强的电信号， 频率信号分量，以及设置在基板中的屏蔽晶体管 控制电极和第一场电极和第二场电极，其控制电极在输入侧连接到接收器，并且其第一和第二场电极具有可预定的第一和第二电位。

    Semiconductor component with countersignal circuit for preventing crosstalk between electronic assemblies
    9.
    发明授权
    Semiconductor component with countersignal circuit for preventing crosstalk between electronic assemblies 有权
    具有用于防止电子组件之间串扰的集中电路的半导体部件

    公开(公告)号：US08227888B2

    公开(公告)日：2012-07-24

    申请号：US11547578

    申请日：2005-04-08

    申请人： Gunther Lippert ,  Gerald Lippert

    发明人： Gunther Lippert ,  Gerald Lippert

    IPC分类号： H01L29/00

    CPC分类号： H01L27/0248 ,  H01L21/765 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor component including a first integrated circuit in a substrate which is adapted to produce electrical signals with a high-frequency signal component, wherein the substrate is such that the high-frequency signal component can propagate on a substrate surface and/or in the substrate interior, a second integrated circuit in the same substrate which is such that its function can be compromised by high-frequency signals, and a countersignal circuit in the same substrate which is adapted to deliver an electrical countersignal which at least at a selected location of the substrate surface and/or the substrate interior attenuates or eliminates the high-frequency electrical signal component emanating from the first integrated circuit, wherein the countersignal circuit includes a receiver which is adapted to produce an electrical signal dependent on the instantaneous field strength of the high-frequency signal component, and a shielding transistor provided in the substrate and having a control electrode and a first field electrode and a second field electrode, whose control electrode is connected on the input side to the receiver and whose first and second field electrodes are acted upon with a predeterminable first and second electrical potential.

    摘要翻译： 一种半导体元件，包括在衬底中的第一集成电路，其适于产生具有高频信号分量的电信号，其中所述衬底使得所述高频信号分量可以在衬底表面和/或所述衬底中传播 内部，在相同基板中的第二集成电路，其功能可以被高频信号损害，以及在相同基板中的基准信号电路，其适于传递电信号，该电信号至少在所选择的位置处 衬底表面和/或衬底内部衰减或消除从第一集成电路发出的高频电信号分量，其中，该信号电路包括接收器，该接收器适于产生取决于高频电信号的瞬时场强的电信号， 频率信号分量，以及设置在基板中的屏蔽晶体管 控制电极和第一场电极和第二场电极，其控制电极在输入侧连接到接收器，并且其第一和第二场电极具有可预定的第一和第二电位。