摘要:
A digital memory circuit has at least two pairs of adjacent memory banks. Each of the banks has n parallel terminals for n read/write data lines. Each bank pair has only two bundles of n/2 read/write data lines. A first bundle is assigned to the first half of a first bank and to a second half of a second bank and the second bundle is assigned to a second half of the first bank and to a first half of the second bank. Data are input/output in parallel to n/2 input/output lines with the timing of successive half-periods of a clock signal. A changeover device is changeable between different switching states for connecting a bundle of n/2 input/output lines to the read/write data lines of the bank pair containing the addressed bank, depending on whether the data are assigned to the first or second half-period of the clock signal.
摘要:
An RC network is integrated in a semiconductor circuit chip and is connected between an input pad or pin and a ground node coupled to a substrate of the chip. The RC network has a plurality of resistance elements, a plurality of capacitance elements and a plurality of connection/isolation elements, which are provided in each case between at least one of the resistance elements and the individual capacitive elements. The inventive circuit configuration enables an optional and independent setting of the input capacitance and of the input resistance of the semiconductor circuit chip, depending on the connection/isolation state of the connection/isolation elements.
摘要:
A method for writing and reading data is performed on a dynamic memory circuit. The memory circuit has memory cells that can be addressed via word lines and bit lines. A word line is activated in the event of addressing of a memory area with a specific address. A word line has a plurality of mutually separate word line sections. Via the bit lines, in the event of addressing with the specific address, in parallel, a first number of data can be written to memory cells addressed by the address or the first number of data can be read from memory cells addressed by the address. In the event of addressing with a specific address, only a portion of the word line sections are activated, in order that only a portion of the memory cells connected to the word line are written to in parallel or read from in parallel.
摘要:
A digital memory circuit contains a plurality of areas each having memory cells disposed in matrix form in rows and columns. The columns of each memory area is subdivided into a plurality of adjacent groups which each form a segment. For each segment, provision is made of a separate set of two-conductor local data lines which lead via line switches to two-conductor master data lines common to all the memory areas. Furthermore, precharge devices are provided in order to equalize the potentials of the conductors of the local data lines and the conductors of the master data lines, the equalization potential for the local data lines being different than the equalization potential for the master data lines. A line switch control device provides for closing only of the line switches on those local data lines which belong to the segment in which a write or read mode takes place.
摘要:
A memory module has a memory cell configuration. For the purpose of testing the memory cell configuration, the memory module has a test structure with at least two test circuits, which are disposed in a distributed fashion on the memory module and are connected to one another via a common test switching bus, which can be connected to an address bus of the memory module via a decoupling circuit during a test operation.
摘要:
A RAM memory circuit has at least one memory bank with a multiplicity of memory cells arranged like a matrix in rows and columns and is subdivided into q≧2 areas, each of which comprises p≧1 segments each comprising a plurality of columns. Each segment is assigned a bundle of master data lines, which branches from an area bus assigned to the relevant area and, for its part, branches via a switching network to the memory cells of the relevant segment. The area buses can be connected cyclically to a common data port. In order to allow a read operation the beginning of which overlaps the end of a preceding write operation, each master data line bundle has coupled to it a data latch for holding the data respectively appearing there, and an isolating switch is in each case provided between each master data line bundle and the assigned area bus.
摘要:
A memory circuit contains areas having memory cells. To transfer memory data from/to the memory cells, two-wire local data lines are provided. Each of the local data lines is associated with one of the memory areas and is connected to a two-wire master data line, common to all the memory areas, by a line circuit-breaker. To represent the binary value of data on a local data line, the wires are driven, to first and second logic potentials. Each line circuit-breaker contains switching devices which, if one of the two wires in the local data line is at the second logic potential, autonomously transfer the potential to the associated wire in the master data line, and, if one of the two wires in the master data line is at the second logic potential, autonomously transfer the potential to the associated wire in the local data line.
摘要:
The testing of a RAM memory circuit containing a multiplicity of memory cells can in each case be selected in groups of n≧1 memory cells by using an applied address information item in order to write in or read out groups of in each case n data. According to the invention, in a test write cycle, a plurality i=j*m of the memory cell groups are selected, where j and m are in each case integers ≧2, and the same datum is written into all the memory cells of in each case m selected memory cell groups. In a subsequent read cycle, the i memory cell groups selected in the write cycle are selected and read in a sequence such that the read-out data groups from in each case m memory cell groups at which the same datum was written in are provided simultaneously or in direct succession as a read data block comprising m*n data. Each time a read data block is provided, a compressed test result is determined and provided; the result indicates if all m*n data of the read data block provided correspond to the datum written therein.
摘要:
A semiconductor memory is described which has a clock input, a signal input, a data output, a measuring device, a control circuit, and a latency. The latency elapses between the activation of the signal input and the availability of the data to be read at the data output. A clock signal is fed to the clock input. On the basis of the clock signal, the measuring device determines a value for the latency and the control circuit configures the semiconductor memory with the determined value for the operation of the semiconductor memory.
摘要:
The invention relates to a method for reducing the current consumption of an electronic circuit having at least one test module for testing the electronic circuit. The test module is connected to at least one line and/or a connection of the electronic circuit. A test control signal is generated, by means of which the test module is at least partially decoupled from the line or the connection in an operating mode of the electronic circuit such that switching currents are prevented in the test module.