摘要:
A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.
摘要:
A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb(1-x)(Zr(1-s)Tis)O3(0
摘要翻译:与化学计量组成相比,压电元件(20)的压电薄膜(3)中的铅含量变小。 更具体地说,压电薄膜(3)由表示为Pb(1-x)(Zr(1-s))Ti(s)的锆钛酸铅 O 3(0
摘要:
A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.
摘要:
A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb(1−x)(Zr(1−s)Tis)O3(0
摘要翻译:与化学计量组成相比,压电元件(20)的压电薄膜(3)中的铅含量变小。 更具体地说,压电薄膜(3)由表示为Pb(1-x)(Zr(1-s))Ti(s)的锆钛酸铅 O 3(0
摘要:
A temperature sensor element for measuring the temperature of exhaust gas from car engines comprises a metallic support having a shape of a flat board, a first electric-insulating film existing on the support, a first temperature sensitive film existing on the first electric-insulating film and having a pair of electrodes, and a second electric-insulating film existing on the temperature sensitive film. The element is superior in thermal shock resistance. The element needs no heat-resistant cap. The element is superior in heat-response since the element has a small heat capacity.
摘要:
An ink jet head unit including a head (2) in which a plurality of nozzle arrays (2a, 2b, 2c, 2d) are formed. Each of the nozzle arrays has a number of nozzle holes, and ink can be ejected from the nozzle holes. The head (2) is mounted on the head base, and flat cables (4a, 4b) are connected at one end to mounting parts (7a, 7b), which are interposed between a first pair of the nozzle arrays (2a, 2b) and a second pair of the nozzle arrays (2c, 2d). The flat cables are flexibly formed by covering transmission wires with an insulation film. The flat cables are connected to the head to transmit ink ejection signals for driving the head.
摘要:
A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
摘要:
Plural nozzle arrays of which each comprises plural nozzle holes (247a) from which ink is ejected are arranged slantingly in a main scanning direction. A distance between a first arbitrary nozzle hole (247a-1) and a second nozzle hole (247a-2), in a nozzle array adjacent to the array to which this first nozzle hole (247a-1) belongs, which is adjacent to the first nozzle hole (247a-1), and a distance between the first nozzle hole (247a-1) and a third nozzle hole (247a-3), in the nozzle array to which the second nozzle hole (247a-2) belongs, which is further adjacent to the first nozzle hole (247a-1) are different from each other.
摘要:
A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
摘要:
A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb1+a(ZrxTi1−x)O3+a(0.2≦a≦0.6 and 0.50≦x≦0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region (24) having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region (25) of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region (24) having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).
摘要翻译:压电薄膜可实现较大的压电位移。 压电薄膜的化学组成由Pb 1 + a(Zr x 1 Ti 1-x O)O 3+表示, (0.2 <= a <= 0.6和0.50 <= x <= 0.62)。 压电薄膜的晶体结构是具有离子缺陷的钙钛矿柱状晶体区域(24)的混合物,其中一部分氧离子,钛离子和锆离子的构成元素缺失,钙钛矿 没有离子缺陷的化学计量组成的柱状晶体区域(25)。 这种结构允许通过具有离子缺陷的钙钛矿柱状晶体区域(24)使晶体中的残余压缩应力松弛,从而实现大的压电位移(位移量)。