公开(公告)号：US07312558B2

公开(公告)日：2007-12-25

申请号：US11097924

申请日：2005-04-01

申请人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

发明人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

IPC分类号： H01L41/187 ,  H01L41/04 ,  H01L41/16

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  G01C19/5607 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

摘要翻译： 在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16） 并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成， 的添加量为1摩尔％〜50摩尔％。 形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

公开(公告)号：US20050218756A1

公开(公告)日：2005-10-06

申请号：US11097924

申请日：2005-04-01

申请人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

发明人： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

IPC分类号： B41J2/01 ,  B41J2/045 ,  B41J2/14 ,  B41J2/16 ,  G01C19/56 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  G01C19/5607 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

摘要翻译： 在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16） 并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成， 的添加量为1摩尔％〜50摩尔％。 形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

公开(公告)号：US07001014B2

公开(公告)日：2006-02-21

申请号：US10381995

申请日：2001-09-26

申请人： Hideo Torii ,  Takeshi Kamada ,  Isaku Kanno ,  Ryoichi Takayama

发明人： Hideo Torii ,  Takeshi Kamada ,  Isaku Kanno ,  Ryoichi Takayama

IPC分类号： B41J2/45

CPC分类号： C01G25/006 ,  C01P2002/34 ,  H01L41/094 ,  H01L41/1876 ,  H01L41/316

摘要： A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb1+a(ZrxTi1−x)O3+a(0.2≦a≦0.6 and 0.50≦x≦0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region (24) having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region (25) of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region (24) having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).

摘要翻译： 压电薄膜可实现较大的压电位移。 压电薄膜的化学组成由Pb 1 + a（Zr x 1 Ti 1-x O）O 3+表示， （0.2 <= a <= 0.6和0.50 <= x <= 0.62）。 压电薄膜的晶体结构是具有离子缺陷的钙钛矿柱状晶体区域（24）的混合物，其中一部分氧离子，钛离子和锆离子的构成元素缺失，钙钛矿 没有离子缺陷的化学计量组成的柱状晶体区域（25）。 这种结构允许通过具有离子缺陷的钙钛矿柱状晶体区域（24）使晶体中的残余压缩应力松弛，从而实现大的压电位移（位移量）。

公开(公告)号：US20050001868A1

公开(公告)日：2005-01-06

申请号：US10833116

申请日：2004-04-28

申请人： Hiroyuki Matsuba ,  Tohru Nakagawa ,  Hideo Torii ,  Takeshi Kamada ,  Kazunari Chikanawa ,  Hiroaki Nakashima ,  Seishi Tomari

发明人： Hiroyuki Matsuba ,  Tohru Nakagawa ,  Hideo Torii ,  Takeshi Kamada ,  Kazunari Chikanawa ,  Hiroaki Nakashima ,  Seishi Tomari

IPC分类号： B41J2/14 ,  B41J2/155 ,  B41J29/38

CPC分类号： B41J2/155 ,  B41J2/14233 ,  B41J2/1433 ,  B41J2002/14362 ,  B41J2002/14475 ,  B41J2002/14491 ,  B41J2202/20

摘要： An ink jet recording apparatus, which performs printing by ink ejection, comprises a pressure chamber in which ink liquid is filled; a nozzle hole 116 which is formed communicating with the pressure chamber; a piezoelectric element 113 which is formed on the pressure chamber, and deforms the pressure chamber by mechanical expansion and contraction, whereby pressure is generated in the pressure chamber and ink is ejected from the nozzle hole 116; and a dew point control unit 123 which keeps a dew point in an atmosphere of the piezoelectric element 113 and the vicinity of the piezoelectric element 113 at a lower value than a dew point in an environment where the ink jet recording apparatus is set. The dew point control unit 123 comprises a compressor 123a, and an air drier 123b which dries compression gas from this compressor 123a and feeds it to the piezoelectric element 113.

摘要翻译： 通过喷墨进行打印的喷墨记录装置包括其中填充有墨液的压力室; 与压力室连通的喷嘴孔116; 压电元件113，其形成在压力室上，并且通过机械膨胀和收缩使压力室变形，由此在压力室中产生压力，并且从喷嘴孔116喷射墨; 以及露点控制单元123，其在设置有喷墨记录装置的环境中，将压电元件113的气氛中的露点和压电元件113的附近保持在低于露点的值。 露点控制单元123包括压缩机123a和干燥来自该压缩机123a的压缩气体并将其馈送到压电元件113的空气干燥器123b。

公开(公告)号：US6105225A

公开(公告)日：2000-08-22

申请号：US600863

申请日：1996-02-09

申请人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

发明人： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

IPC分类号： G01P15/08 ,  G01P15/09 ,  H01L41/29 ,  H01L41/22

CPC分类号： G01P15/0922 ,  G01P15/0802 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/313 ,  Y10T29/42 ,  Y10T29/4981

摘要： A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.

摘要翻译： 公开了一种制造小型，轻型，高精度和廉价的薄膜传感器元件的方法。 薄膜传感器元件包括具有开口部分和粘附在其上的多层膜结构的传感器保持基板。 多层膜结构包括第一电极膜，第二电极膜和存在于第一和第二电极膜之间的压电电介质氧化物膜。 制造薄膜传感器元件的方法包括以下步骤：通过在碱金属卤化物衬底的表面上形成具有（100）面取向的第一电极膜来形成多层膜结构，在其上形成压电电介质氧化物，并形成 压电电介质氧化物上的第二电极膜; 将多层膜结构粘附在具有开口部的传感器保持基板的表面上; 并用水溶解和除去碱金属卤化物基质。