Piezoelectric element, fabrication method for the same, and inkjet head, inkjet recording apparatus and angular velocity sensor including the same
    3.
    发明授权
    Piezoelectric element, fabrication method for the same, and inkjet head, inkjet recording apparatus and angular velocity sensor including the same 有权
    压电元件,其制造方法以及喷墨头,喷墨记录装置和包括该压电元件的角速度传感器

    公开(公告)号:US07145285B2

    公开(公告)日:2006-12-05

    申请号:US10894474

    申请日:2004-07-19

    IPC分类号: H01L41/08

    摘要: A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.

    摘要翻译: 压电元件包括​​第一电极; 压电层叠膜,由形成在第一电极膜上的第一压电膜和形成在第一压电膜上的第一压电膜组成,并由第一压电膜控制晶体取向; 以及形成在第二压电膜上的第二电极膜。 第一和第二压电膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状颗粒的集合体。 第二压电膜的柱状晶粒的截面直径比第一压电膜的柱状晶粒大。 压电体层叠膜的厚度l与第二压电体膜的截面直径d的比l / d为20以上60以下。

    Temperature sensor element, temperature sensor having the same and
method for producing the same temperature sensor element
    5.
    发明授权
    Temperature sensor element, temperature sensor having the same and method for producing the same temperature sensor element 失效
    温度传感器元件,温度传感器和相同温度传感器元件的制造方法

    公开(公告)号:US6014073A

    公开(公告)日:2000-01-11

    申请号:US776625

    申请日:1997-01-10

    IPC分类号: G01K7/22 H01C7/02 H01C7/10

    CPC分类号: G01K7/22 G01K7/223 H01C7/023

    摘要: A temperature sensor element for measuring the temperature of exhaust gas from car engines comprises a metallic support having a shape of a flat board, a first electric-insulating film existing on the support, a first temperature sensitive film existing on the first electric-insulating film and having a pair of electrodes, and a second electric-insulating film existing on the temperature sensitive film. The element is superior in thermal shock resistance. The element needs no heat-resistant cap. The element is superior in heat-response since the element has a small heat capacity.

    摘要翻译: PCT No.PCT / JP96 / 01266 Sec。 371日期1997年1月10日 102(e)日期1997年1月10日PCT提交1996年5月10日PCT公布。 出版物WO96 / 35932 日期:1996年11月14日用于测量汽车发动机废气温度的温度传感器元件包括具有平板形状的金属支撑件,存在于支撑件上的第一电绝缘膜,存在于第一温度敏感膜 第一电绝缘膜并具有一对电极和存在于感温膜上的第二电绝缘膜。 该元件具有优异的耐热冲击性。 该元件不需要耐热帽。 该元件具有优异的热响应性,因为该元件具有较小的热容量。

    Capacitance sensor
    7.
    发明授权
    Capacitance sensor 失效
    电容传感器

    公开(公告)号:US5719740A

    公开(公告)日:1998-02-17

    申请号:US595240

    申请日:1996-02-01

    摘要: A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.

    摘要翻译: 通过将诸如KBr的碱金属卤化物材料填充到通孔中,在表面上形成导电薄膜,并溶解和除去碱金属卤化物材料,获得小而高灵敏度的电容式压力传感器。 在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。 在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后,碱金属卤化物材料被水溶解并除去。 以这种方式,隔膜由通孔和导电薄膜制成。 由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

    Method of manufacturing a capacitance sensor
    9.
    发明授权
    Method of manufacturing a capacitance sensor 失效
    制造电容式传感器的方法

    公开(公告)号:US5507080A

    公开(公告)日:1996-04-16

    申请号:US353315

    申请日:1994-12-05

    摘要: A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.

    摘要翻译: 通过将诸如KBr的碱金属卤化物材料填充到通孔中,在表面上形成导电薄膜,并溶解和除去碱金属卤化物材料,获得小而高灵敏度的电容式压力传感器。 在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。 在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后,碱金属卤化物材料被水溶解并除去。 以这种方式,隔膜由通孔和导电薄膜制成。 由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。

    PIEZOELECTRIC THIN FILM AND METHOD FOR PREPARATION THEOF, AND PIEZOELECTRIC ELEMENT HAVING THE PIEZOELECTRIC THIN FILM, INK-JET HEAD USING THE PIEZOELECTRIC ELEMENT, AND INK-JET RECORDING DEVICE HAVING THE INK-JET HEAD
    10.
    发明授权
    PIEZOELECTRIC THIN FILM AND METHOD FOR PREPARATION THEOF, AND PIEZOELECTRIC ELEMENT HAVING THE PIEZOELECTRIC THIN FILM, INK-JET HEAD USING THE PIEZOELECTRIC ELEMENT, AND INK-JET RECORDING DEVICE HAVING THE INK-JET HEAD 有权
    压电薄膜及其制备方法,具有压电薄膜的压电元件,使用压电元件的喷墨头和具有喷墨头的喷墨记录装置

    公开(公告)号:US07001014B2

    公开(公告)日:2006-02-21

    申请号:US10381995

    申请日:2001-09-26

    IPC分类号: B41J2/45

    摘要: A piezoelectric thin film can achieve a large piezoelectric displacement. A chemical composition of the piezoelectric thin film is expressed by Pb1+a(ZrxTi1−x)O3+a(0.2≦a≦0.6 and 0.50≦x≦0.62). The crystal structure of the piezoelectric thin film is a mixture of a perovskite columnar crystal region (24) having an ionic defect in which a portion of the constitutive elements of an oxygen ion, a titanium ion, and a zirconium ion is missing and a perovskite columnar crystal region (25) of stoichiometric composition having no ionic defect. This configuration allows a residual compressive stress in the crystal to be relaxed by the perovskite columnar crystal region (24) having an ionic defect, thus achieving a large piezoelectric displacement (displacement amount).

    摘要翻译: 压电薄膜可实现较大的压电位移。 压电薄膜的化学组成由Pb 1 + a(Zr x 1 Ti 1-x O)O 3+表示, (0.2 <= a <= 0.6和0.50 <= x <= 0.62)。 压电薄膜的晶体结构是具有离子缺陷的钙钛矿柱状晶体区域(24)的混合物,其中一部分氧离子,钛离子和锆离子的构成元素缺失,钙钛矿 没有离子缺陷的化学计量组成的柱状晶体区域(25)。 这种结构允许通过具有离子缺陷的钙钛矿柱状晶体区域(24)使晶体中的残余压缩应力松弛,从而实现大的压电位移(位移量)。