公开(公告)号：US20070187741A1

公开(公告)日：2007-08-16

申请号：US11690702

申请日：2007-03-23

申请人： Woo-Geun LEE ,  Hye-Young RYU

发明人： Woo-Geun LEE ,  Hye-Young RYU

IPC分类号： H01L29/94

CPC分类号： G02F1/1368 ,  H01L27/1255

摘要： In a thin film transistor substrate, a method of manufacturing the same, and a display apparatus having the same, a thin film transistor, a gate member, and a storage member are formed on an insulating substrate. The gate member has a gate line and a gate electrode electrically connected to the gate line, and the storage member has a storage line, a first storage electrode, and a second storage electrode. A data member is formed on an active layer. The data member includes a data line crossing the gate line, a third storage electrode overlapped with the first storage electrode and a fourth storage electrode overlapped with the second storage electrode. Thus, a capacitance variation of a storage capacitor may be prevented, thereby improving display quality of a display apparatus.

摘要翻译： 在绝缘基板上形成薄膜晶体管基板及其制造方法及具有该薄膜晶体管基板的显示装置，薄膜​​晶体管，栅极部件和存储部件。 栅极部件具有与栅极线电连接的栅极线和栅电极，并且存储部件具有存储线，第一存储电极和第二存储电极。 在有源层上形成数据元件。 数据构件包括与栅极线交叉的数据线，与第一存储电极重叠的第三存储电极和与第二存储电极重叠的第四存储电极。 因此，可以防止存储电容器的电容变化，从而提高显示装置的显示质量。

公开(公告)号：US20110254007A1

公开(公告)日：2011-10-20

申请号：US13168769

申请日：2011-06-24

申请人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： H01L33/08

CPC分类号： G02F1/136227 ,  G02F2001/136222 ,  H01L27/3258

摘要： In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.

摘要翻译： 在薄膜晶体管（TFT）基板中，栅极绝缘层设置在与栅极线电连接的栅电极上。 半导体层设置在栅极绝缘层上。 源极电极与与栅极线相交的数据线电连接。 漏电极面对源电极并限定半导体层的沟道面积。 有机层设置在数据线上，并且具有暴露通道区域的第一开口。 无机绝缘层设置在有机层上。 像素电极设置在无机绝缘层上并与漏电极电连接。 无机绝缘层覆盖第一开口，无机绝缘层的厚度基本均匀。

公开(公告)号：US20110193076A1

公开(公告)日：2011-08-11

申请号：US12957743

申请日：2010-12-01

申请人： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

发明人： Pil-Sang YUN ,  Ki-Won KIM ,  Hye-Young RYU ,  Woo-Geun LEE ,  Seung-Ha CHOI ,  Jae-Hyoung YOUN ,  Kyoung-Jae CHUNG ,  Young-Wook LEE ,  Je-Hun LEE ,  Kap-Soo YOON ,  Do-Hyun KIM ,  Dong-Ju YANG ,  Young-Joo CHOI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/41733 ,  H01L21/44 ,  H01L21/441 ,  H01L21/465 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.

摘要翻译： 薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

公开(公告)号：US20120018720A1

公开(公告)日：2012-01-26

申请号：US13177783

申请日：2011-07-07

申请人： Jae-Woo PARK ,  Dong-Hoon LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Hye-Young RYU ,  Young-Joo CHOI

发明人： Jae-Woo PARK ,  Dong-Hoon LEE ,  Sung-Haeng CHO ,  Woo-Geun LEE ,  Hye-Young RYU ,  Young-Joo CHOI

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/458

摘要： A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.

摘要翻译： 显示基板包括在基底基板上沿第一方向延伸的栅极线，在基底基板上的数据线，并且沿与第一方向交叉的第二方向延伸，栅极线上的栅极绝缘层，薄膜晶体管和 像素电极。 薄膜晶体管包括栅电极，电极连接栅极线，氧化物半导体图案以及氧化物半导体图案上的源电极和漏电极并彼此间隔开。 氧化物半导体图案包括包括氧化铟的第一半导体图案和包含无铟氧化物的第二半导体图案。 像素电极与漏电极电连接。

公开(公告)号：US20110272696A1

公开(公告)日：2011-11-10

申请号：US13092882

申请日：2011-04-22

申请人： Hye-Young RYU ,  Jin-Won LEE ,  Woo-Geun LEE ,  Hee-Jun BYEON ,  Xun ZHU

发明人： Hye-Young RYU ,  Jin-Won LEE ,  Woo-Geun LEE ,  Hee-Jun BYEON ,  Xun ZHU

IPC分类号： H01L29/786 ,  H01L33/08 ,  H01L21/44

CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3272 ,  H01L51/5253 ,  H01L2227/323

摘要： A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.

摘要翻译： 薄膜晶体管面板包括基板，基板上的阻光层，遮光层上的第一保护膜，第一保护膜上的第一电极和第二电极，第一保护膜的一部分上的氧化物半导体层 在第一电极和第二电极之间暴露的保护膜，绝缘层，与氧化物半导体层重叠的绝缘层和绝缘层上的第四电极。 遮光层包括第一侧壁，并且第一保护膜包括第二侧壁。 第一和第二侧壁沿着基本相同的线设置。

公开(公告)号：US20090057671A1

公开(公告)日：2009-03-05

申请号：US12195974

申请日：2008-08-21

申请人： Hye-Young RYU ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

发明人： Hye-Young RYU ,  Hyang-Shik Kong ,  Byung-Duk Yang ,  Kyung-Sook Jeon

IPC分类号： G02F1/1335 ,  H01L33/00 ,  H01L21/00

CPC分类号： G02F1/1362 ,  G02F1/133514 ,  G02F2001/1316 ,  G02F2001/136222 ,  H01L27/124

摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.

摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。

公开(公告)号：US20120037906A1

公开(公告)日：2012-02-16

申请号：US13115088

申请日：2011-05-24

申请人： Hye-Young RYU ,  Woo-Geun LEE ,  Young-Joo CHOI ,  Kyoung-Jae CHUNG ,  Jin-Won LEE ,  Seung-Ha CHOI ,  Hee-Jun BYEON ,  Pil-Sang YUN

发明人： Hye-Young RYU ,  Woo-Geun LEE ,  Young-Joo CHOI ,  Kyoung-Jae CHUNG ,  Jin-Won LEE ,  Seung-Ha CHOI ,  Hee-Jun BYEON ,  Pil-Sang YUN

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L27/1214 ,  H01L27/1225 ,  H01L27/1255

摘要： A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.

摘要翻译： 提供了能够降低由于氧化物半导体图案的劣化引起的器件劣化的薄膜晶体管阵列基板及其制造方法。 薄膜晶体管阵列基板可以包括其上形成有栅极的绝缘基板，形成在绝缘基板上的栅极绝缘膜，设置在栅极绝缘膜上的氧化物半导体图案，形成在氧化物半导体上的抗蚀刻图案 图案，以及形成在防蚀刻图案上的源电极和漏电极。 氧化物半导体图案可以包括位于源电极和漏电极之间的边缘部分，并且边缘部分可以包括至少一个导电区域和至少一个非导电区域。

公开(公告)号：US20090141227A1

公开(公告)日：2009-06-04

申请号：US12101079

申请日：2008-04-10

申请人： Hye-Young RYU

发明人： Hye-Young RYU

IPC分类号： G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/1333 ,  G02F2001/133354 ,  G02F2001/133388 ,  G02F2001/136222 ,  G02F2001/136231

摘要： A display substrate includes a transparent insulating substrate, a transparent common electrode, a dummy pattern and a key pattern. The transparent insulating substrate has a display area and a non-display area. Images are displayed in the display area, and the non-display area surrounds the display area. The transparent common electrode is formed in the display area of the insulating substrate. The dummy pattern is formed in the non-display area of the insulating substrate. The dummy pattern is formed from the same material as the common electrode. The key pattern is formed on the dummy pattern. The key pattern may include a metal or an opaque photoresist. Therefore, a process of manufacturing the display substrate may be simplified.

摘要翻译： 显示基板包括透明绝缘基板，透明公共电极，虚设图案和键图案。 透明绝缘基板具有显示区域和非显示区域。 图像显示在显示区域中，非显示区域围绕显示区域。 透明公共电极形成在绝缘基板的显示区域中。 虚设图案形成在绝缘基板的非显示区域中。 虚设图案由与公共电极相同的材料形成。 键图案形成在虚拟图案上。 键图案可以包括金属或不透明光致抗蚀剂。 因此，可以简化显示基板的制造工艺。

公开(公告)号：US20080299712A1

公开(公告)日：2008-12-04

申请号：US12192531

申请日：2008-08-15

申请人： Woo-Geun LEE ,  Hye-Young RYU ,  Sang-Gab KIM ,  Jang-Soo KIM

发明人： Woo-Geun LEE ,  Hye-Young RYU ,  Sang-Gab KIM ,  Jang-Soo KIM

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  H01L21/32134 ,  H01L21/76838 ,  H01L27/1214 ,  H01L29/66765

摘要： A method of manufacturing a thin film transistor array panel includes forming a gate line including a gate electrode, forming a gate insulating layer on the gate line, forming a semiconductor stripe on the gate insulating layer; forming ohmic contacts on the semiconductor stripe, forming a data line including a source electrode and a drain electrode on the ohmic contacts, depositing a passivation layer on the data line and the drain electrode, and forming a pixel electrode connected to the drain electrode. The formation of the data line and the drain electrode, the ohmic contacts, and the semiconductor stripe includes depositing an intrinsic silicon layer, an extrinsic silicon layer, and a conductor layer on the gate insulating layer, forming a photoresist including a second portion corresponding to a channel area between the source electrode and the drain electrode, and a first portion corresponding to a wire area on the data line and the drain electrode, wherein the first portion is thicker than the second portion, etching the conductor layer corresponding to a remaining area except for the wire and the channel area using the photoresist as an etch mask, removing the second portion to expose the conductor layer on the channel areas, etching the intrinsic silicon layer and the extrinsic silicon layer on the remaining area, etching the conductor layer and the extrinsic silicon layer on the channel areas, and removing the first portion.

摘要翻译： 制造薄膜晶体管阵列面板的方法包括：形成包括栅电极的栅极线，在栅极线上形成栅绝缘层，在栅绝缘层上形成半导体条; 在半导体条上形成欧姆接触，在欧姆接触上形成包括源电极和漏电极的数据线，在数据线和漏电极上沉积钝化层，并形成连接到漏电极的像素电极。 数据线和漏电极，欧姆接触和半导体条纹的形成包括在栅绝缘层上沉积本征硅层，非本征硅层和导体层，形成光致抗蚀剂，其包括对应于 源极电极和漏极电极之间的沟道区域，以及对应于数据线和漏极电极的导线区域的第一部分，其中第一部分比第二部分厚，蚀刻对应于剩余区域的导体层 除了使用光致抗蚀剂作为蚀刻掩模的导线和沟道区域之外，去除第二部分以暴露沟道区域上的导体层，蚀刻剩余区域上的本征硅层和非本征硅层，蚀刻导体层和 在通道区域上的非本征硅层，以及去除第一部分。

公开(公告)号：US20080042135A1

公开(公告)日：2008-02-21

申请号：US11840161

申请日：2007-08-16

申请人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

发明人： Hye-Young RYU ,  Jang-Soo Kim ,  Su-Hyoung Kang

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： G02F1/136227 ,  G02F2001/136222 ,  H01L27/3258

摘要： In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.

摘要翻译： 在薄膜晶体管（TFT）基板中，栅极绝缘层设置在与栅极线电连接的栅电极上。 半导体层设置在栅极绝缘层上。 源极电极与与栅极线相交的数据线电连接。 漏电极面对源电极并限定半导体层的沟道面积。 有机层设置在数据线上，并且具有暴露通道区域的第一开口。 无机绝缘层设置在有机层上。 像素电极设置在无机绝缘层上并与漏电极电连接。 无机绝缘层覆盖第一开口，无机绝缘层的厚度基本均匀。