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    Method for making amorphous semiconductor thin films
    5.
    发明授权
    Method for making amorphous semiconductor thin films 失效

    公开(公告)号：US3862857A

    公开(公告)日：1975-01-28

    申请号：US31832972

    申请日：1972-12-26

    Applicant: IBM

    Inventor： GAMBINO RICHARD J

    IPC: H01L45/00 ,  C03C3/32 ,  C03C4/00 ,  C23C14/00 ,  C23C14/24 ,  H01B13/06

    CPC classification number: C23C14/24

    Abstract: A method for providing an amorphous semicondcutor material thin film on a substrate member is described. In carrying out the method, there are disposed in spaced relationship in an evacuated chamber, a surface of a body of the semiconductor material which contains the constituents of the desired thin film in substantially stoichiometric proportion, the body being substantially uniform in thickness and in composition, and a surface of the substrate member. The distance between the two surfaces is chosen to be no greater than the shortest dimension of the surface of the semiconductor body, the area of the latter surface being chosen to be at least equal to the area of the surface of the substrate member. The semiconductor material contains semiconductor components, each of which has a high enough vapor pressure at a temperature less than its melting point to meet the criterion wherein the ratio P/(MTm)1/2, wherein P is the vapor pressure in Torr, M and Tm are molecular weight and melting points (in degrees Kelvin), respectively, has a value of at least 0.855 X 10 8. The surface of the semiconductor material body is uniformly heated to a temperature close to but less than its melting point to cause the semiconductor material thereof to evaporate therefrom onto the surface of the substrate member and to deposit on the substrate member''s surface as an amorphous film. In the situation wherein it is desired to deposit an amorphous semiconductor material thin film wherein the vapor pressure of one of the constituents is not sufficiently high at a temperature less than its melting point to meet the abovementioned ratio criterion, then, in the method, those components which have a sufficiently high vapor pressure at temperatures below their melting points to meet the criterion are combined in the desired stoichiometric proportions in a single semiconductor material body to provide a first sublimation source and those components which do not have sufficiently high vapor pressures at temperatures below the melting point of the semiconductor material to meet the above set forth ratio criterion function as separate sublimation sources. In this situation, the surface of the semiconductor body having the sufficiently high vapor pressure components is heated to a temperature close to but less than its melting point as in the single source method, and the sublimation sources comprising the low vapor pressure semiconductor constituents are positioned close to and adjacent to the first source, the latter sources being heated whereby their deposition rates onto the substrate are at the amounts required to provide their stoichiometric proportions in the thin film deposited on the substrate.

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