公开(公告)号：US09969152B2

公开(公告)日：2018-05-15

申请号：US15071208

申请日：2016-03-16

Applicant: Nippon Electric Glass Co., Ltd. ,  Industrial Technology Research Institute

Inventor： Yasuo Yamazaki ,  Takahide Fujii ,  Chun-Hsien Chien ,  Chia-Sheng Huang ,  Ting-Yu Ke ,  Hsin-Yun Hsu

IPC: B32B7/06 ,  B32B17/06 ,  B32B37/06 ,  H01L51/00 ,  H01L51/52 ,  B32B43/00

CPC classification number: B32B43/006 ,  B32B7/06 ,  B32B17/06 ,  B32B37/06 ,  B32B2309/02 ,  B32B2309/10 ,  B32B2309/105 ,  B32B2315/08 ,  B32B2457/20 ,  B32B2457/206 ,  H01L51/003 ,  H01L51/0096 ,  H01L51/0097 ,  H01L51/5246 ,  H01L2227/326 ,  H01L2251/5338 ,  Y02E10/549

Abstract: In a method of producing a glass substrate including a laminate preparing step of laminating a glass film 1 having flexibility and a support glass 2 supporting the same, to prepare a laminate 3; a process step of forming an organic EL device 4 on the glass film 1 in the laminate 3, involving heating; and a peeling step of peeling off the glass film 1 on which the organic EL device 4 is formed from the support glass 2 to obtain a glass substrate 5, a heating step of heating the glass film 1 and the support glass 2 is executed before execution of the laminate preparing step, and the glass film 1 and the support glass 2 are laminated in the condition that they are heated at the time of execution of the laminate preparing step.

公开(公告)号：US20130234325A1

公开(公告)日：2013-09-12

申请号：US13873249

申请日：2013-04-30

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Ming-Ji Dai ,  Ra-Min Tain ,  Chun-Hsien Chien ,  Heng-Chieh Chien ,  Sheng-Tsai Wu

IPC: H01L23/498

CPC classification number: H01L23/49811 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/36 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/11009 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1421 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/3511 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

Abstract: By adding particles of high thermal conductivity and low thermal expansion coefficient into the copper as a composite material and filling with the composite material into the through-via hole, the mismatch of the coefficient of thermal expansion and the stress of the through-silicon via are lowered and the thermal conductivity of the through-silicon via is increased.

Abstract translation: 通过将高导热性和低热膨胀系数的颗粒作为复合材料添加到铜中，并将复合材料填充到通孔中，热膨胀系数与贯穿硅通孔的应力的失配是 降低了通硅通孔的导热性。