公开(公告)号：US10829368B2

公开(公告)日：2020-11-10

申请号：US16509145

申请日：2019-07-11

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: B81C1/00 ,  H04R19/00 ,  H04R31/00 ,  H04R19/04

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

公开(公告)号：US10442682B2

公开(公告)日：2019-10-15

申请号：US15927574

申请日：2018-03-21

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl

IPC: H01L31/058 ,  B81B7/00 ,  B81C1/00 ,  H01L23/34 ,  G01N29/24

Abstract: The present disclosure relates to an apparatus having a substrate arrangement with a first circuit arrangement that heats up during operation and a second circuit arrangement that is integrated into a substrate material of the substrate arrangement. Further, the apparatus has a cavity structure that is arranged between the first and the second circuit arrangement, said cavity structure being formed in the substrate material and having a pressure that is lower than an ambient atmospheric pressure. The present disclosure further relates to a method for producing such an apparatus (10).

公开(公告)号：US20180273373A1

公开(公告)日：2018-09-27

申请号：US15927574

申请日：2018-03-21

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl

IPC: B81B7/00 ,  B81C1/00 ,  H01L23/34

CPC classification number: B81B7/0038 ,  B81B2207/096 ,  B81C1/00047 ,  B81C1/00285 ,  H01L23/345 ,  H01L2224/16225

Abstract: The present disclosure relates to an apparatus having a substrate arrangement with a first circuit arrangement that heats up during operation and a second circuit arrangement that is integrated into a substrate material of the substrate arrangement. Further, the apparatus has a cavity structure that is arranged between the first and the second circuit arrangement, said cavity structure being formed in the substrate material and having a pressure that is lower than an ambient atmospheric pressure. The present disclosure further relates to a method for producing such an apparatus (10).

公开(公告)号：US09402138B2

公开(公告)日：2016-07-26

申请号：US13651372

申请日：2012-10-12

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: H01L29/84 ,  H04R19/04 ,  H04R19/00 ,  H04R31/00 ,  B81C1/00

CPC classification number: B81C1/00825 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00873 ,  B81C2201/017 ,  B81C2201/053 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract translation: 公开了一种制造MEMS器件的方法。 此外，公开了一种MEMS器件和包括MEMS器件的模块。 一个实施例包括用于制造MEMS器件的方法，包括在衬底的第一主表面上形成MEMS堆叠，在衬底的第二主表面上形成聚合物层，并在聚合物层和衬底中形成第一开口，使得 第一个开口与MEMS堆栈相邻。

公开(公告)号：US11189539B2

公开(公告)日：2021-11-30

申请号：US16433278

申请日：2019-06-06

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  John Cooper ,  Joerg Ortner ,  Stephan Pindl ,  Caterina Travan ,  Alexander Zoepfl

IPC: H01L23/31 ,  H01L21/02

Abstract: An apparatus includes a semiconductor-based substrate with a functional structure that is formed in or on the semiconductor-based substrate. The apparatus includes a frame structure surrounding the functional structure and includes a coating that covers the functional structure and is delimited by the frame structure.

公开(公告)号：US11081551B2

公开(公告)日：2021-08-03

申请号：US16548144

申请日：2019-08-22

Applicant: Infineon Technologies AG

Inventor： Christoph Glacer ,  Stephan Pindl ,  Werner Weber ,  Sebastian Wittmann

IPC: H01L21/20 ,  H01L21/36 ,  H01L29/16 ,  H01L23/532 ,  B01D71/02 ,  H01L21/02

Abstract: In accordance with an embodiment, a method for producing a graphene-based sensor includes providing a carrier substrate; forming a carrier structure on the carrier substrate, wherein one or more separating structures are formed on an upper side of the carrier structure; and performing a wet chemical transfer of a graphene layer onto the upper side of the carrier structure that comprises the separating structures, where the separating structures and a tear strength of the graphene layer are matched to one another such that the graphene layer respectively tears at the separating structures during the wet chemical transfer.

公开(公告)号：US10955599B2

公开(公告)日：2021-03-23

申请号：US15476667

申请日：2017-03-31

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Christoph Glacer

IPC: G02B5/28 ,  G01N21/17 ,  H05B3/34

Abstract: A light emitter device includes an emitter component including a heater structure arranged on a membrane structure. The membrane structure is located above a first cavity. Additionally, the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component. Further, the heater structure is configured to emit light, if a predefined current flows through the heater structure. Additionally, the light emitter device includes a lid substrate having a recess. The lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate. Further, a pressure in the second cavity is less than 100 mbar.

公开(公告)号：US20190330057A1

公开(公告)日：2019-10-31

申请号：US16509145

申请日：2019-07-11

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stephan Pindl ,  Bernhard Knott ,  Carsten Ahrens

IPC: B81C1/00 ,  H04R31/00 ,  H04R19/04 ,  H04R19/00

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

公开(公告)号：US20170290097A1

公开(公告)日：2017-10-05

申请号：US15476667

申请日：2017-03-31

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Christoph Glacer

IPC: H05B3/00 ,  G01N21/61 ,  G02B5/28 ,  G01N21/17

CPC classification number: G02B5/281 ,  G01N21/1702 ,  G01N2021/1704 ,  G01N2201/06186 ,  H05B3/34 ,  H05B2203/032

Abstract: A light emitter device includes an emitter component including a heater structure arranged on a membrane structure. The membrane structure is located above a first cavity. Additionally, the first cavity is located between the membrane structure and at least a portion of a supporting substrate of the emitter component. Further, the heater structure is configured to emit light, if a predefined current flows through the heater structure. Additionally, the light emitter device includes a lid substrate having a recess. The lid substrate is attached to the emitter component so that the recess forms a second cavity between the membrane structure and the lid substrate. Further, a pressure in the second cavity is less than 100 mbar.

公开(公告)号：US20170284951A1

公开(公告)日：2017-10-05

申请号：US15086573

申请日：2016-03-31

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Daniel Lugauer ,  Dominic Maier ,  Alfons Dehe

IPC: G01N27/02 ,  H01L21/56 ,  H01L23/538 ,  H05K1/18 ,  H01L23/31

CPC classification number: H01L23/315 ,  G01N27/028 ,  G01N27/128 ,  G01N33/0036 ,  H01L21/185 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/561 ,  H01L21/568 ,  H01L21/7624 ,  H01L23/053 ,  H01L23/057 ,  H01L23/291 ,  H01L23/295 ,  H01L23/296 ,  H01L23/31 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/5386 ,  H01L24/19 ,  H01L24/24 ,  H01L24/96 ,  H01L33/0079 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/3025 ,  H05K1/181

Abstract: According to an embodiment, a sensor package includes an electrically insulating substrate including a cavity in the electrically insulating substrate, an ambient sensor, an integrated circuit die embedded in the electrically insulating substrate, and a plurality of conductive interconnect structures coupling the ambient sensor to the integrated circuit die. The ambient sensor is supported by the electrically insulating substrate and arranged adjacent the cavity.