Abstract:
Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.
Abstract:
An apparatus including a first package coupled to a second package, wherein each of the first package and the second package has a first side and an opposite second side; a first die coupled to the first package; and a second die coupled to the second side of the second package, wherein the first package is coupled to the second package in a stacked arrangement such that the first side of the second package faces the second side of the first package. A method including coupling a first package to a second package in a stacked configuration, wherein the first package includes a first package substrate and a first die and the second package includes a second package substrate and a second die, wherein the second die is disposed on a side of the second package substrate opposite the first package substrate.
Abstract:
A microelectronic package including a passive microelectronic device disposed within a package body, wherein the package body is the portion of the microelectronic package which provides support and/or rigidity to the microelectronic package. In a flip-chip type microelectronic package, the package body may comprise a microelectronic substrate to which an active microelectronic device is electrically attached. In an embedded device type microelectronic package, the package body may comprise the material in which the active microelectronic device is embedded.
Abstract:
Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.