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    Superconducting junctions
    1.
    发明授权
    Superconducting junctions 有权
    超导路口

    公开(公告)号：US09324767B1

    公开(公告)日：2016-04-26

    申请号：US14145410

    申请日：2013-12-31

    Applicant: Intermolecular, Inc.

    Inventor： Andrew Steinbach ,  Tony Bonetti ,  Frank Greer ,  Kurt Pang ,  Yun Wang

    IPC: H01L29/06 ,  H01L27/18 ,  H01L23/532

    CPC classification number: H01L27/18 ,  H01L23/53276 ,  H01L39/223 ,  H01L39/2493 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Provided are superconducting tunnel junctions, such as Josephson tunnel junctions, and a method of fabricating thereof. A junction includes an insulator disposed between two superconductors. The junction may also include one or two interface layers, with each interface layer disposed between the insulator and one of the superconductors. The interface layer is configured to prevent oxygen from entering the adjacent superconductor during fabrication and operation of the junction. Furthermore, the interface layer may protect the insulator from the environment during handling and processing of the junction, thereby allowing vacuum breaks after the interface layer is formed as well as new integration schemes, such as depositing a dielectric layer and forming a trench in the dielectric layer for the second superconductor. In some embodiments, the junction may be annealed during its fabrication to move oxygen from the superconductors and/or from the insulator into the one or two interface layers.

    Abstract translation: 提供了超导隧道结，例如约瑟夫逊隧道结，及其制造方法。 接合部包括设置在两个超导体之间的绝缘体。 接合部还可以包括一个或两个界面层，每个界面层设置在绝缘体和超导体之一之间。 接口层被配置为在结的制造和操作期间防止氧气进入相邻的超导体。 此外，接口层可以在接合处理和处理期间保护绝缘体免受环境影响，从而在形成界面层之后允许真空断裂以及新的集成方案，例如沉积电介质层并在电介质中形成沟槽 第二超导体层。 在一些实施例中，接头可以在其制造期间被退火以将氧从超导体和/或从绝缘体移动到一个或两个界面层中。

    Superconducting circuits with reduced microwave absorption
    6.
    发明授权
    Superconducting circuits with reduced microwave absorption 有权
    具有减少微波吸收的超导电路

    公开(公告)号：US09455073B2

    公开(公告)日：2016-09-27

    申请号：US14259455

    申请日：2014-04-23

    Applicant: Intermolecular, Inc. ,  Northrop Grumman Systems Corporation

    Inventor： Sergey Barabash ,  Dipankar Pramanik ,  Andrew Steinbach ,  Chris Kirby

    IPC: H01B12/02 ,  H01L39/24 ,  H01L39/22

    CPC classification number: H01B12/02 ,  H01L39/22 ,  H01L39/24 ,  Y10S505/704 ,  Y10S505/706

    Abstract: Provided are superconducting circuits, methods of operating these superconducting circuits, and methods of determining processing conditions for operating these superconducting circuits. A superconducting circuit includes a superconducting element, a conducting element, and a dielectric element disposed between the superconducting element and the conducting element. The conducting element may be another superconducting element, a resonating element, or a conducting casing. During operation of the superconducting element a direct current (DC) voltage is applied between the superconducting element and the conducting element. This application of the DC voltage reduces average microwave absorption of the dielectric element. In some embodiments, when the DC voltage is first applied, the microwave absorption may initially rise and then fall below the no-voltage absorption level. The DC voltage level may be determined by testing the superconducting circuit at different DC voltage levels and selecting the one with the lowest microwave absorption.

    Abstract translation: 提供超导电路，操作这些超导电路的方法以及确定用于操作这些超导电路的处理条件的方法。 超导电路包括超导元件，导电元件和设置在超导元件和导电元件之间的介电元件。 导电元件可以是另一种超导元件，谐振元件或导电壳体。 在超导元件的操作期间，在超导元件和导电元件之间施加直流（DC）电压。 DC电压的这种应用降低了介电元件的平均微波吸收。 在一些实施例中，当首先施加DC电压时，微波吸收可以最初升高然后降低到无电压吸收水平以下。 直流电压电平可以通过在不同的直流电压电平下测试超导电路并选择具有最低微波吸收的电路来确定。

    Hydrogenated Amorphous Silicon Dielectric for Superconducting Devices
    7.
    发明申请
    Hydrogenated Amorphous Silicon Dielectric for Superconducting Devices 有权
    用于超导器件的氢化非晶硅介质

    公开(公告)号：US20150184286A1

    公开(公告)日：2015-07-02

    申请号：US14145337

    申请日：2013-12-31

    Applicant: Intermolecular, Inc.

    Inventor： Sergey Barabash ,  Dipankar Pramanik ,  Andrew Steinbach

    IPC: C23C16/24 ,  C23C14/14 ,  C23C14/34 ,  C23C14/48 ,  C23C16/56

    CPC classification number: C23C16/24 ,  C23C14/14 ,  C23C14/5806 ,  C23C14/5826 ,  C23C14/5846 ,  C23C16/56 ,  H01J37/32357 ,  H01J37/32917 ,  H01J37/32935 ,  H01J37/3405

    Abstract: Amorphous silicon (a-Si) is hydrogenated for use as a dielectric (e.g., an interlayer dielectric) for superconducting electronics. A hydrogenated a-Si layer is formed on a substrate by CVD or sputtering. The hydrogen may be integrated during or after the a-Si deposition. After the layer is formed, it is first annealed in an environment of high hydrogen chemical potential and subsequently annealed in an environment of low hydrogen chemical potential. Optionally, the a-Si (or an H-permeable overlayer, if added) may be capped with a hydrogen barrier before removing the substrate from the environment of low hydrogen chemical potential.

    Abstract translation: 非晶硅（a-Si）被氢化用作超导电子器件的电介质（例如，层间电介质）。 通过CVD或溅射在衬底上形成氢化a-Si层。 在a-Si沉积期间或之后，氢可以被整合。 在形成层之后，首先在高氢化学势的环境中退火，随后在低氢化学势的环境中退火。 任选地，在从低氢化学势的环境中除去衬底之前，可以用氢气阻挡层将a-Si（或者如果加入的是H-可渗透的覆盖层）封盖。

    Methods for Reducing Interface Contact Resistivity
    8.
    发明申请
    Methods for Reducing Interface Contact Resistivity 审中-公开
    降低界面接触电阻率的方法

    公开(公告)号：US20160093772A1

    公开(公告)日：2016-03-31

    申请号：US14501631

    申请日：2014-09-30

    Applicant: Intermolecular, Inc.

    Inventor： Khaled Ahmed ,  Frank Greer ,  Andrew Steinbach

    IPC: H01L33/32 ,  H01L33/40 ,  H01L33/00

    CPC classification number: H01L33/325 ,  H01L33/0062 ,  H01L33/0095 ,  H01L33/14 ,  H01L2933/0016

    Abstract: Provided are methods of forming low resistivity contacts. Also provided are devices having such low resistive contacts. A method may include doping the surface of a structure, such as a gallium nitride layer. Specifically, a dopant containing layer is formed on the surface of the structure using, for example, atomic layer deposition (ALD). The dopant may magnesium. In some embodiments, the dopant containing layer also includes nitrogen. A capping layer may be then formed over the dopant containing layer to prevent dopant desorption. The stack including the structure with the dopant containing layer disposed on its surface is then annealed to transfer dopant from the dopant containing layer into the surface. After annealing, any remaining dopant containing layer is removed. When another component is later formed over the surface, a low resistivity contact is created between this other component and the doped structure.

    Abstract translation: 提供形成低电阻率接触的方法。 还提供了具有这种低电阻触点的装置。 一种方法可以包括掺杂诸如氮化镓层的结构的表面。 具体地，使用例如原子层沉积（ALD）在结构的表面上形成掺杂剂层。 掺杂剂可以是镁。 在一些实施例中，含掺杂剂层还包括氮。 然后可以在含掺杂剂层上形成覆盖层以防止掺杂剂解吸。 包括具有设置在其表面上的含掺杂剂层的结构的堆叠然后被退火以将掺杂剂从掺杂剂层转移到表面中。 退火后，除去任何剩余的含掺杂剂层。 当在表面上稍后形成另一个部件时，在该另一部件与掺杂结构之间产生低电阻接触。

    Superconducting Circuits with Reduced Microwave Absorption
    9.
    发明申请
    Superconducting Circuits with Reduced Microwave Absorption 有权
    具有减少微波吸收的超导电路

    公开(公告)号：US20150313046A1

    公开(公告)日：2015-10-29

    申请号：US14259455

    申请日：2014-04-23

    Applicant: Intermolecular, Inc.

    Inventor： Sergey Barabash ,  Dipankar Pramanik ,  Andrew Steinbach

    IPC: H05K9/00 ,  H01L39/24 ,  H01L39/02

    CPC classification number: H01B12/02 ,  H01L39/22 ,  H01L39/24 ,  Y10S505/704 ,  Y10S505/706

    Abstract: Provided are superconducting circuits, methods of operating these superconducting circuits, and methods of determining processing conditions for operating these superconducting circuits. A superconducting circuit includes a superconducting element, a conducting element, and a dielectric element disposed between the superconducting element and the conducting element. The conducting element may be another superconducting element, a resonating element, or a conducting casing. During operation of the superconducting element a direct current (DC) voltage is applied between the superconducting element and the conducting element. This application of the DC voltage reduces average microwave absorption of the dielectric element. In some embodiments, when the DC voltage is first applied, the microwave absorption may initially rise and then fall below the no-voltage absorption level. The DC voltage level may be determined by testing the superconducting circuit at different DC voltage levels and selecting the one with the lowest microwave absorption.

    Abstract translation: 提供超导电路，操作这些超导电路的方法以及确定用于操作这些超导电路的处理条件的方法。 超导电路包括超导元件，导电元件和设置在超导元件和导电元件之间的介电元件。 导电元件可以是另一种超导元件，谐振元件或导电壳体。 在超导元件的操作期间，在超导元件和导电元件之间施加直流（DC）电压。 DC电压的这种应用降低了介电元件的平均微波吸收。 在一些实施例中，当首先施加DC电压时，微波吸收可以最初升高然后降低到无电压吸收水平以下。 直流电压电平可以通过在不同的直流电压电平下测试超导电路并选择具有最低微波吸收的电路来确定。

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