公开(公告)号：US20240337926A1

公开(公告)日：2024-10-10

申请号：US18745066

申请日：2024-06-17

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Michael K. Kocsis ,  Alan J. Telecky ,  Brian J. Cardineau

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0042 ,  G03F7/0043 ,  G03F7/2004 ,  G03F7/32 ,  G03F7/322 ,  G03F7/325

Abstract: Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.

公开(公告)号：US11886116B2

公开(公告)日：2024-01-30

申请号：US17307223

申请日：2021-05-04

Applicant: Inpria Corporation

Inventor： Peter de Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/11 ,  G03F7/00 ,  G03F7/038 ,  G03F7/42 ,  G03F7/004 ,  G03F1/48 ,  G03F1/22

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US11693312B2

公开(公告)日：2023-07-04

申请号：US17895657

申请日：2022-08-25

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0043 ,  G03F7/0042 ,  G03F7/20 ,  G03F7/327 ,  Y10T428/24355

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US20210271170A1

公开(公告)日：2021-09-02

申请号：US17188679

申请日：2021-03-01

Applicant: Inpria Corporation

Inventor： Alan J. Telecky ,  Jason K. Stowers ,  Douglas A. Keszler ,  Stephen T. Meyers ,  Peter de Schepper ,  Sonia Castellanos Ortega ,  Michael Greer ,  Kirsten Louthan

IPC: G03F7/38 ,  G03F7/004

Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.

公开(公告)号：US10782610B2

公开(公告)日：2020-09-22

申请号：US15784258

申请日：2017-10-16

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US20200292937A1

公开(公告)日：2020-09-17

申请号：US16885581

申请日：2020-05-28

Applicant: Inpria Corporation

Inventor： Jason K. Stowers ,  Alan J. Telecky ,  Douglas A. Keszler ,  Andrew Grenville

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

Abstract: Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

公开(公告)号：US10732505B1

公开(公告)日：2020-08-04

申请号：US16861333

申请日：2020-04-29

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/38 ,  G03F7/004 ,  C23C14/08 ,  C23C16/40 ,  G03F7/40 ,  G03F7/32 ,  G03F7/20

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.

公开(公告)号：US20240272557A1

公开(公告)日：2024-08-15

申请号：US18596255

申请日：2024-03-05

Applicant: Inpria Corporation

Inventor： Alan J. Telecky ,  Jason K. Stowers ,  Douglas A. Keszler ,  Stephen T. Meyers ,  Peter De Schepper ,  Sonia Castellanos Ortega ,  Michael Greer ,  Kirsten Louthan

IPC: G03F7/38 ,  G03F7/004

CPC classification number: G03F7/38 ,  G03F7/0042

Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.

公开(公告)号：US20240118614A1

公开(公告)日：2024-04-11

申请号：US18389961

申请日：2023-12-20

Applicant: Inpria Corporation

Inventor： Peter De Schepper ,  Jason K. Stowers ,  Sangyoon Woo ,  Michael Kocsis ,  Alan J. Telecky

IPC: G03F7/039 ,  G03F1/22 ,  G03F1/48 ,  G03F7/00 ,  G03F7/004 ,  G03F7/038 ,  G03F7/11 ,  G03F7/20 ,  G03F7/42

CPC classification number: G03F7/0392 ,  G03F1/22 ,  G03F1/48 ,  G03F7/0017 ,  G03F7/0042 ,  G03F7/0382 ,  G03F7/11 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/42

Abstract: Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

公开(公告)号：US11809081B2

公开(公告)日：2023-11-07

申请号：US17832920

申请日：2022-06-06

Applicant: Inpria Corporation

Inventor： Stephen T. Meyers ,  Jeremy T. Anderson ,  Brian J. Cardineau ,  Joseph B. Edson ,  Kai Jiang ,  Douglas A. Keszler ,  Alan J. Telecky

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/38 ,  C23C16/40 ,  C23C14/08 ,  C23C16/455 ,  G03F7/30 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/168 ,  C23C14/086 ,  C23C16/407 ,  C23C16/45523 ,  C23C16/45561 ,  G03F7/0042 ,  G03F7/0043 ,  G03F7/162 ,  G03F7/167 ,  G03F7/2004 ,  G03F7/30 ,  G03F7/325 ,  G03F7/38 ,  G03F7/40

Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.