公开(公告)号：US08901677B2

公开(公告)日：2014-12-02

申请号：US14198480

申请日：2014-03-05

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

IPC: H01L21/336 ,  H01L21/311 ,  H01L29/02

CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。

公开(公告)号：US20150176122A1

公开(公告)日：2015-06-25

申请号：US14136384

申请日：2013-12-20

Applicant: Intermolecular Inc.

Inventor： Chien-Lan Hsueh ,  Tony P. Chiang ,  Randall J. Higuchi ,  Kurt Pang

IPC: C23C16/44

CPC classification number: C23C16/44 ,  C23C16/308 ,  C23C16/34 ,  C23C16/45527 ,  Y10T428/24355

Abstract: Ternary oxides, nitrides and oxynitrides of the form (a)(b)OxNy are formed by ALD or CVD when the reaction temperature ranges of the (a) precursor and the (b) precursor do not overlap. Chemically-reacted sub-layers, e.g., (a)OxNy, are formed by reacting the lower-temperature precursor with O and/or N at a temperature within its reaction range. Physisorbed sub-layers (e.g., (b) or (b)+ligand) are formed between the chemically-reacted sub-layers by allowing the higher-temperature precursor to physically adsorb to the low-temperature surface. When the desired sub-layers are formed, the substrate is heated to a temperature at which the higher-temperature precursor reacts (optionally in the presence of more O and/or N) to form (a)(b)OxNy. Quarternary and more complex compounds can be similarly formed.

Abstract translation: （a）（a）（b）的三元氧化物，氮化物和氮氧化物当（a）前体和（b）前体的反应温度范围不重叠时，通过ALD或CVD形成OxNy。 化学反应的亚层，例如，（a）OxNy是通过在其反应范围内的温度下使低温前体与O和/或N反应形成的。 通过使高温前体物理吸附到低温表面，在化学反应的子层之间形成物理吸附的子层（例如，（b）或（b）+配体））。 当形成所需的子层时，将基底加热至较高温度前体反应的温度（任选地在更多的O和/或N的存在下）以形成（a）（b）OxNy。 可以类似地形成四元和更复杂的化合物。

公开(公告)号：US20140273525A1

公开(公告)日：2014-09-18

申请号：US14019961

申请日：2013-09-06

Applicant: Intermolecular, Inc.

Inventor： Kurt Pang ,  Sean Barstow ,  Chi-I Lang ,  Michael Miller ,  Sandip Niyogi ,  Prashant B. Phatak

IPC: H01L21/02

CPC classification number: H01L21/76864 ,  H01L21/02005 ,  H01L21/02104 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/3065 ,  H01L22/12 ,  H01L22/14 ,  H01L27/1462 ,  H01L27/14643 ,  H01L27/14698 ,  H01L29/1606 ,  H01L29/41 ,  H01L29/66477 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/786

Abstract: Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 Å-thick Al2O3 films.

Abstract translation: 通过原子层沉积（ALD）沉积具有适合于高k栅极电介质的低泄漏电流的金属氧化物膜（例如氧化铝）。 金属沉积阶段后的清洗时间为5-15秒，氧化阶段后的吹扫时间延长超过60秒。 延长后氧化吹扫在30Å厚的Al2O3薄膜中产生了数量级的泄漏电流。

公开(公告)号：US09324767B1

公开(公告)日：2016-04-26

申请号：US14145410

申请日：2013-12-31

Applicant: Intermolecular, Inc.

Inventor： Andrew Steinbach ,  Tony Bonetti ,  Frank Greer ,  Kurt Pang ,  Yun Wang

IPC: H01L29/06 ,  H01L27/18 ,  H01L23/532

CPC classification number: H01L27/18 ,  H01L23/53276 ,  H01L39/223 ,  H01L39/2493 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are superconducting tunnel junctions, such as Josephson tunnel junctions, and a method of fabricating thereof. A junction includes an insulator disposed between two superconductors. The junction may also include one or two interface layers, with each interface layer disposed between the insulator and one of the superconductors. The interface layer is configured to prevent oxygen from entering the adjacent superconductor during fabrication and operation of the junction. Furthermore, the interface layer may protect the insulator from the environment during handling and processing of the junction, thereby allowing vacuum breaks after the interface layer is formed as well as new integration schemes, such as depositing a dielectric layer and forming a trench in the dielectric layer for the second superconductor. In some embodiments, the junction may be annealed during its fabrication to move oxygen from the superconductors and/or from the insulator into the one or two interface layers.

Abstract translation: 提供了超导隧道结，例如约瑟夫逊隧道结，及其制造方法。 接合部包括设置在两个超导体之间的绝缘体。 接合部还可以包括一个或两个界面层，每个界面层设置在绝缘体和超导体之一之间。 接口层被配置为在结的制造和操作期间防止氧气进入相邻的超导体。 此外，接口层可以在接合处理和处理期间保护绝缘体免受环境影响，从而在形成界面层之后允许真空断裂以及新的集成方案，例如沉积电介质层并在电介质中形成沟槽 第二超导体层。 在一些实施例中，接头可以在其制造期间被退火以将氧从超导体和/或从绝缘体移动到一个或两个界面层中。

公开(公告)号：US20140252565A1

公开(公告)日：2014-09-11

申请号：US14198480

申请日：2014-03-05

Applicant: Intermolecular, Inc.

Inventor： Frank Greer ,  Edwin Adhiprakasha ,  Chi-I Lang ,  Ratsamee Limdulpaiboon ,  Sandip Niyogi ,  Kurt Pang ,  J. Watanabe

IPC: H01L21/311 ,  H01L29/02

CPC classification number: H01L21/31122 ,  H01L21/02052 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02301 ,  H01L21/02304 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/28255 ,  H01L29/02

Abstract: A germanium-containing semiconductor surface is prepared for formation of a dielectric overlayer (e.g., a thin layer of high-k gate dielectric) by (1) removal of native oxide, for example by wet cleaning, (2) additional cleaning with hydrogen species, (3) in-situ formation of a controlled monolayer of GeO2, and (4) in-situ deposition of the dielectric overlayer to prevent uncontrolled regrowth of native oxide. The monolayer of GeO2 promotes uniform nucleation of the dielectric overlayer, but it too thin to appreciably impact the effective oxide thickness of the dielectric overlayer.

Abstract translation: 制备含锗的半导体表面，用于通过（1）去除天然氧化物，例如通过湿法清洁来形成电介质覆盖层（例如，高k栅极电介质的薄层），（2）用氢物质进行额外的清洁 ，（3）原位形成受控单层的GeO 2，以及（4）电介质覆层的原位沉积，以防止天然氧化物的不受控制的再生长。 GeO2的单层促进电介质覆盖层的均匀成核，但它太薄而不能明显影响电介质覆盖层的有效氧化物厚度。