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公开(公告)号：US06930369B2
公开(公告)日：2005-08-16
申请号：US10713510
申请日：2003-11-14
IPC分类号： H01L27/105 , G11C11/14 , G11C11/16 , H01L21/8229 , H01L21/8246 , H01L27/22 , H01L29/76 , H01L29/82 , H01L43/00 , H01L43/08
CPC分类号： H01L27/222 , G11C11/16 , G11C11/1675 , H01L43/08
摘要： A thin film device and a method of providing thermal assistance therein is disclosed. Accordingly, a heater material is utilized to thermally assist in the operation of the thin film device. By utilizing a heater material to thermally assist in the operation of the thin film device, a substantial improvement in the accuracy and performance of the thin film device is achieved. A first aspect of the present invention is a thin film device. The thin film device includes at least one patterned thin film layer, a heater material coupled to the at least one patterned thin film layer for providing thermal assistance to the at least one of the patterned thin film layers and a conductor coupled to the heater material for supplying energy to the heater material.
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2.发明授权公开(公告)号：US06905888B2
公开(公告)日：2005-06-14
申请号：US10676414
申请日：2003-09-30
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L21/00
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory (“MRAM”) device may include an array of magnetic memory elements having data layers with controlled nucleation sites.
摘要翻译： 磁记忆元件的铁磁数据层形成有受控的成核位点。 在一些实施方案中，成核位点可以是数据层中的裂缝或来自数据层的突起。 磁性随机存取存储器（“MRAM”）器件可以包括具有受控成核位点的数据层的磁存储元件阵列。
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3.发明授权公开(公告)号：US06803616B2
公开(公告)日：2004-10-12
申请号：US10173195
申请日：2002-06-17
IPC分类号： H01L2976
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. The controlled nucleation sites improve the switching distribution of the magnetic memory elements, which increases reliability of writing to the magnetic memory elements. A Magnetic Random Access Memory (MRAM) device may include an array of such magnetic memory elements.
摘要翻译： 磁记忆元件的铁磁数据层形成有受控的成核位点。 受控的成核位点改善了磁存储元件的开关分布，这增加了写入磁存储元件的可靠性。 磁性随机存取存储器（MRAM）装置可以包括这种磁存储元件的阵列。
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公开(公告)号：US06862212B2
公开(公告)日：2005-03-01
申请号：US10697172
申请日：2003-10-30
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L43/00 , H01L43/08 , G11C11/00
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3254 , H01F41/307 , H01L27/222
摘要： A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.
摘要翻译： 磁存储单元包括串联连接的第一和第二磁阻元件。 第一和第二磁阻装置具有不同矫顽力的感应层。 磁性随机存取存储器（MRAM）设备可以包括这些存储器单元的阵列。
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公开(公告)号：US06911710B2
公开(公告)日：2005-06-28
申请号：US09925755
申请日：2001-08-09
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L43/00 , H01L43/08 , H01L29/82
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3254 , H01F41/307 , H01L27/222
摘要： A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.
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公开(公告)号：US06756239B1
公开(公告)日：2004-06-29
申请号：US10414325
申请日：2003-04-15
IPC分类号： H01L2100
CPC分类号： H01L43/12
摘要： A magneto-resistive element is constructed. A ferromagnetic sense layer is deposited on a surface. The ferromagnetic sense layer is patterned. An etch is performed in preparation for depositing a dielectric layer. The dielectric layer is deposited over the sense layer. A ferromagnetic pinned layer is deposited over the dielectric layer.
摘要翻译： 构造了一个磁阻元件。 铁磁感应层沉积在表面上。 铁磁感应层被图案化。 进行蚀刻以准备沉积介电层。 介电层沉积在感应层上。 在电介质层上沉积铁磁钉扎层。
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公开(公告)号：US06765819B1
公开(公告)日：2004-07-20
申请号：US10205531
申请日：2002-07-25
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.
摘要翻译： 公开了磁存储器件。 在一个实施例中，该装置包括具有沿着第一方向对准的容易轴的存储单元，所述存储单元被配置为当仅沿着第一方向接收磁场时最容易从一个逻辑状态切换到另一逻辑状态;以及 与所述存储单元相关联的磁偏置元件，所述磁偏置元件具有沿着不同于所述第一方向的第二方向排列的磁取向。
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公开(公告)号：US06775196B2
公开(公告)日：2004-08-10
申请号：US10194767
申请日：2002-07-12
IPC分类号： G11C704
摘要： A magnetic memory is disclosed. In one embodiment, the magnetic memory includes a magnetic memory cell, a conductor which crosses the magnetic memory cell and a circuit coupled to the conductor configured to apply a modified magnetic field to the magnetic memory cell in response to temperature variations in the magnetic memory cell.
摘要翻译： 公开了磁存储器。 在一个实施例中，磁存储器包括磁存储器单元，穿过磁存储单元的导体和耦合到导体的电路，该电路被配置为响应于磁存储单元中的温度变化而将修改的磁场施加到磁存储单元 。
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公开(公告)号：US06564742B2
公开(公告)日：2003-05-20
申请号：US09921145
申请日：2001-08-03
IPC分类号： G01K1106
CPC分类号： G01K11/06
摘要： A critical temperature warning apparatus and method to monitor the thermal history of a product such as a memory card. The apparatus comprises a critical temperature indicator, which is externally attached to a product to be monitored. The indicator indicates if the product has experienced a critical temperature. The critical temperature indicator may comprise a patterned array of wax, the wax having a melting point equal to the critical temperature. If the pattern of wax has been destroyed leaving a molten wax residue, then this indicates that the product has experienced a critical temperature. The critical temperature indicator may also include thermographic inks for indicating that a critical temperature has been experienced.
摘要翻译： 一种用于监测诸如存储卡的产品的热历史的临界温度警告装置和方法。 该装置包括临时温度指示器，其外部附接到要监视的产品。 该指示器指示产品是否经历了临界温度。 临界温度指示器可以包括蜡的图案化阵列，蜡的熔点等于临界温度。 如果蜡的图案被破坏，留下熔融的蜡残留物，则表明该产品已经经历了临界温度。 临界温度指示器还可以包括用于指示经历了临界温度的热成像油墨。
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公开(公告)号：US06667901B1
公开(公告)日：2003-12-23
申请号：US10426381
申请日：2003-04-29
IPC分类号： G11C1115
CPC分类号： G11C11/1673 , G11C11/161
摘要： A magnetic memory device includes a first magnetic tunnel junction having a first reference ferromagnetic layer; a second magnetic tunnel junction having a second reference ferromagnetic layer; and an electrically conductive spacer layer between the first and second reference layers. The first and second reference layers are antiferromagnetically coupled.
摘要翻译： 磁存储器件包括具有第一参考铁磁层的第一磁性隧道结; 具有第二参考铁磁层的第二磁性隧道结; 以及在第一和第二参考层之间的导电间隔层。 第一和第二参考层是反铁磁耦合的。
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