Memory disk shipping container with improved contaminant control
    5.
    发明授权
    Memory disk shipping container with improved contaminant control 失效
    具有改进污染物控制的记忆盘运输容器

    公开(公告)号:US07175026B2

    公开(公告)日:2007-02-13

    申请号:US10406765

    申请日:2003-04-02

    申请人: Bruce Hachtmann

    发明人: Bruce Hachtmann

    IPC分类号: B65D85/00 A45C13/10

    CPC分类号: G11B33/0444 Y10S206/832

    摘要: A container for disks has an improved latching mechanism. The container comprises a cassette with sidewalls with slots for holding disks in an axial arrangement, two opposite end walls each have a U-shaped recess extending downwardly from the open top, a top cover with a rectangular top portion and two end portions extend downwardly to cover the U-shaped recess. The top cover latches to the cassette by way of a latching mechanism which includes a living hinge, an extension portion, and a hook portion all on each end portion. The hook portion cooperates and engages with a cooperative catch member on the cassette. The extension member is under tension to secure the top cover in place. In an alternate embodiment, recesses on the extension portion connect to nubs on the cassettes or on the bottom cover to secure the top cover in place.

    摘要翻译: 用于盘的容器具有改进的闭锁机构。 该容器包括具有侧壁的盒体,其具有用于将盘保持为轴向布置的狭槽,两个相对的端壁各自具有从开口顶部向下延伸的U形凹部,具有矩形顶部部分的顶盖和两个端部向下延伸到 盖住U形凹槽。 顶盖通过闩锁机构锁定到盒体,该锁定机构包括活动铰链,延伸部分和全部在每个端部上的钩部分。 钩部与盒上的协作捕捉构件配合并接合。 延伸构件处于张紧状态,以将顶盖固定到位。 在替代实施例中,延伸部分上的凹槽连接到盒或底盖上的凸块,以将顶盖固定就位。

    Composition and method of forming an insulating layer in a photovoltaic device
    7.
    发明申请
    Composition and method of forming an insulating layer in a photovoltaic device 审中-公开
    在光伏器件中形成绝缘层的组合物和方法

    公开(公告)号:US20100236628A1

    公开(公告)日:2010-09-23

    申请号:US12382498

    申请日:2009-03-17

    摘要: A solar cell includes a first electrode located over a substrate, at least one p-type semiconductor absorber layer located over the first electrode, the p-type semiconductor absorber layer comprising a copper indium selenide (CIS) based alloy material, an n-type semiconductor layer located over the p-type semiconductor absorber layer, an insulating aluminum zinc oxide layer located over the n-type semiconductor layer, the insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm and a second electrode over the insulating aluminum layer, the second electrode being transparent and electrically conductive. The insulating aluminum zinc oxide having an aluminum content of 100 ppm to 5000 ppm, may be deposited by pulsed DC, non-pulsed DC, or AC sputtering from an aluminum doped zinc oxide having an aluminum content of 100 ppm to 5000 ppm.

    摘要翻译: 太阳能电池包括位于基板上的第一电极,位于第一电极上方的至少一个p型半导体吸收体层,包含铜铟硒(CIS)基合金材料的p型半导体吸收层,n型 位于p型半导体吸收体层上的半导体层,位于n型半导体层上方的绝缘铝氧化锌层,铝含量为100ppm〜5000ppm的绝缘铝氧化锌和绝缘铝上的第二电极 层,第二电极是透明和导电的。 铝含量为100ppm至5000ppm的绝缘铝氧化锌可以通过脉冲DC,非脉冲DC或AC溅射从铝含量为100ppm至5000ppm的铝掺杂氧化锌中沉积。