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公开(公告)号：US20180219220A1
公开(公告)日：2018-08-02
申请号：US15741948
申请日：2016-06-02
申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (Kobe Steel, Ltd.) , NATIONAL UNIVERSITY CORPORATION TOYOHASHI UNIVERSITY OF TECHNOLOGY
CPC分类号： H01M4/38 , H01M4/02 , H01M4/0433 , H01M4/0471 , H01M12/08 , H01M2004/021 , Y02E60/128
摘要： A negative electrode for use in an iron-air secondary battery of the present invention comprises a three-dimensionally formed structure in which particles of metal powder comprising iron or an iron alloy as a principal component are coupled to each other through metallic bonding, wherein the negative electrode has a porosity of greater than or equal to 30% and less than or equal to 70%. A production method of a negative electrode for an iron-air secondary battery of the present invention comprises: mixing with a resin, metal powder comprising iron or an iron alloy as a principle component; molding a mixture obtained after the mixing; and sintering a molded body obtained after the molding.
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公开(公告)号：US20190122941A1
公开(公告)日：2019-04-25
申请号：US16096093
申请日：2017-04-26
CPC分类号： H01L22/12 , G01N22/00 , G01N22/02 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/32 , H01L29/786 , H01L29/7869
摘要： A quality evaluation method for an oxide semiconductor thin film includes: selecting a peak value having a largest calculated value and a time constant for the peak value among calculated values obtained by substituting each signal value for respective elapsed times after stopping excitation light irradiation and the corresponding elapsed time into the following Equation (1); and estimating, from the peak value and the time constant, an energy level of defect state and the defect density in the oxide semiconductor thin film: x=(signal value)×(elapsed time for the signal value) Equation 1.
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3.发明申请OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 审中-公开薄膜晶体管，薄膜晶体管和显示器件半导体层氧化物公开(公告)号：US20150364553A1
公开(公告)日：2015-12-17
申请号：US14765507
申请日：2014-02-27
发明人： Shuji KOSAKA , Kazushi HAYASHI
IPC分类号： H01L29/24 , C01G19/00 , H01L29/786
CPC分类号： H01L29/24 , C01G19/006 , C01P2006/40 , H01L21/02554 , H01L21/02565 , H01L29/66969 , H01L29/78693
摘要： With respect to this oxide for a semiconductor layer of a thin film transistor, metal elements that constitute the oxide comprise In, Sn, Ga, and Zn, the oxygen partial pressure when forming the oxide film as the semiconductor layer of the thin film transistor is 15 volume % or lower (not including 0 volume %), the defect density of the oxide satisfies 2×1016 cm−3 or less, and the mobility satisfies 6.2 cm2/Vs or more.
摘要翻译： 对于薄膜晶体管的半导体层的该氧化物，构成氧化物的金属元素包括In，Sn，Ga和Zn，当形成作为薄膜晶体管的半导体层的氧化膜的氧分压为 15体积％以下（不包括0体积％），氧化物的缺陷密度为2×1016 cm -3以下，迁移率为6.2cm2 / Vs以上。
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公开(公告)号：US20170184660A1
公开(公告)日：2017-06-29
申请号：US15316801
申请日：2015-06-22
发明人： Kazushi HAYASHI , Aya MIKI , Nobuyuki KAWAKAMI
IPC分类号： G01R31/265 , H01L21/28 , G01R1/06 , G01R31/27 , H01L29/786 , G01R31/26
CPC分类号： G01R31/2656 , G01R1/06 , G01R31/2623 , G01R31/27 , H01L21/28 , H01L22/12 , H01L22/14 , H01L27/32 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78693
摘要： Provided is a method for simply evaluating defects caused in interface states in oxide semiconductor thin films and protective films in TFTs having protective films formed on the surface of oxide semiconductor thin films without actually measuring the characteristics of the same.This evaluation method evaluates defects caused in the interface states by measuring electron states in the oxide semiconductor thin film by a contact method or noncontact method. The defects caused in the interface states are any of the following (1)-(3). (1) Threshold value voltage (Vth,) when a positive bias is applied to the thin-film transistor (2) Difference in threshold value voltage (ΔVth) before and after applying the positive bias to the thin-film transistor (3) Threshold value during the first measurement when a plurality of measurements is made of the threshold value voltage when a positive bias is applied to the thin-film transistor.
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公开(公告)号：US20160223462A1
公开(公告)日：2016-08-04
申请号：US14917452
申请日：2014-09-10
发明人： Kazushi HAYASHI , Tomoya KISHI
CPC分类号： G01N21/6489 , G01N22/00 , G01N2201/06113 , G01N2201/0697 , H01L22/12
摘要： An evaluation device for an oxide semiconductor thin film includes a first excitation light irradiation unit configured to irradiate a measurement region of a sample with first excitation light and to generate an electron-hole pair, an electromagnetic wave irradiation unit configured to irradiate with electromagnetic wave, a reflecting electromagnetic wave intensity detection unit configured to detect intensity of a reflected electromagnetic wave, a second excitation light irradiation unit configured to irradiate the sample with second excitation light and to generate photoluminescence light, an emission intensity measurement unit configured to measure emission intensity of the photoluminescence light, and an evaluation unit configured to evaluate mobility and stress stability. The first excitation light irradiation unit and the second excitation light irradiation unit are the same or different excitation light radiation units.
摘要翻译： 用于氧化物半导体薄膜的评估装置包括：第一激发光照射单元，被配置为用第一激发光照射样品的测量区域并产生电子 - 空穴对;电磁波照射单元，被配置为用电磁波照射， 反射电磁波强度检测单元，被配置为检测反射电磁波的强度;第二激发光照射单元，被配置为用第二激发光照射样品并产生光致发光;发射强度测量单元，被配置为测量 光致发光灯和评估单元，其被配置为评估移动性和应力稳定性。 第一激发光照射单元和第二激发光照射单元是相同或不同的激发光辐射单元。
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6.发明申请EVALUATION METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, QUALITY CONTROL METHOD FOR OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN THE EVALUATION METHOD 审中-公开氧化物半导体薄膜的评价方法，氧化物半导体薄膜的质量控制方法以及评估方法中使用的评价单元和评价装置公开(公告)号：US20150371906A1
公开(公告)日：2015-12-24
申请号：US14654736
申请日：2014-01-09
IPC分类号： H01L21/66 , H01L29/786 , H01L29/24 , H01L27/12
CPC分类号： H01L22/12 , G01R31/2608 , G01R31/2621 , G01R31/2642 , G01R31/2656 , G01R31/2894 , G01R31/308 , H01L27/1225 , H01L29/24 , H01L29/66969 , H01L29/78603 , H01L29/7869
摘要： Provided are: a method for measuring and evaluating (predicting or estimating) stress stability of an oxide semiconductor thin film in a contactless manner; and a quality control method for an oxide semiconductor. This evaluation method comprises a first step and a second step. The first step includes: subjecting an oxide semiconductor thin film to irradiation with both excitation light and microwave radiation; stopping the irradiation with the excitation light after the maximum intensity of reflected wave of the microwave radiation, which varies with the irradiation of the excitation light, from the thin film has been observed; and thereafter measuring a variation in the reflectance with which the microwave radiation is reflected by the thin film. The second step includes: calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation observed about 1 μs after the stopping; and thus evaluating the stress stability of the oxide semiconductor.
摘要翻译： 提供：以非接触方式测量和评估（预测或估计）氧化物半导体薄膜的应力稳定性的方法; 以及氧化物半导体的质量控制方法。 该评估方法包括第一步骤和第二步骤。 第一步包括：使氧化物半导体薄膜用激发光和微波辐射两者照射; 已经观察到从薄膜发出的随着激发光的照射而变化的微波辐射的最大反射波强度后，用激发光停止照射; 然后测量微波辐射被薄膜反射的反射率的变化。 第二步包括：根据反射率的变化计算在停止后约1μs观察到的对应于慢衰减的参数; 从而评估氧化物半导体的应力稳定性。
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7.发明申请METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, METHOD FOR MANAGING QUALITY OF OXIDE SEMICONDUCTOR THIN FILM, AND EVALUATION ELEMENT AND EVALUATION DEVICE USED IN ABOVE EVALUATION METHOD 有权用于评价氧化物半导体薄膜的方法，用于管理氧化物半导体薄膜质量的方法，以及在上述评估方法中使用的评估单元和评估装置公开(公告)号：US20160282284A1
公开(公告)日：2016-09-29
申请号：US15031990
申请日：2014-12-01
CPC分类号： G01N22/00 , G01N21/63 , G01N21/8422 , G01N27/04 , H01L22/12 , H01L22/14 , H01L29/7869
摘要： The present invention provides a method for accurately and easily measuring/evaluating/predicting/estimating the electrical resistance of an oxide semiconductor thin film, and a method for managing the film quality. The method for evaluating an oxide semiconductor thin film includes: a first step for irradiating, with excitation light and microwave, a sample on which an oxide semiconductor thin film is formed, measuring the maximum value of the reflected microwave by the thin film which changes due to the excitation light irradiation, then stopping the excitation light irradiation and measuring the change in reflectivity of the microwave from the thin film after the excitation light irradiation has been stopped; and a second step for calculating a parameter corresponding to the slow decay observed after the excitation light irradiation has been stopped from the change in the reflectivity and evaluating the electrical resistivity of the oxide semiconductor thin film.
摘要翻译： 本发明提供了一种准确且容易地测量/评估/预测/估计氧化物半导体薄膜的电阻的方法，以及用于管理薄膜质量的方法。 用于评估氧化物半导体薄膜的方法包括：用激发光和微波照射形成有氧化物半导体薄膜的样品的第一步骤，通过由薄膜变化的薄膜测量反射微波的最大值 激发光照射，然后停止激发光照射，并且在激发光照射停止之后测量来自薄膜的微波反射率的变化; 以及第二步骤，用于计算与激发光照射之后观察到的慢衰减的参数相对应的反射率的变化，并评估氧化物半导体薄膜的电阻率。
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8.发明申请OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 审中-公开薄膜晶体管，薄膜晶体管和显示器件半导体层氧化物公开(公告)号：US20150357474A1
公开(公告)日：2015-12-10
申请号：US14764720
申请日：2014-02-27
发明人： Shuji KOSAKA , Kazushi HAYASHI
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/66969 , H01L29/78693
摘要： With respect to this oxide for a semiconductor layer of a thin film transistor, metal elements that constitute the oxide comprise In, Ga, and Zn, the oxygen partial pressure when forming the oxide film as the semiconductor layer of the thin film transistor is 15 volume % or lower (not including 0 volume %), the defect density of the oxide satisfies 2×1016 cm−3 or less, and the mobility satisfies 6 cm2/Vs or more.
摘要翻译： 关于用于薄膜晶体管的半导体层的该氧化物，构成氧化物的金属元素包括In，Ga和Zn，当形成作为薄膜晶体管的半导体层的氧化膜的氧分压为15体积 ％以下（不包括0体积％），氧化物的缺陷密度为2×1016cm-3以下，迁移率为6cm 2 / Vs以上。
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9.发明申请METHOD FOR EVALUATING OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR QUALITY CONTROL OF OXIDE SEMICONDUCTOR THIN FILM 有权用于评价氧化物半导体薄膜的方法，以及氧化物半导体薄膜的质量控制方法公开(公告)号：US20150355095A1
公开(公告)日：2015-12-10
申请号：US14760023
申请日：2013-09-04
发明人： Kazushi HAYASHI , Toshihiro KUGIMIYA , Tomoya KISHI , Aya MIKI
CPC分类号： G01N21/6489 , H01L22/12 , H01L29/24 , H01L29/66969 , H01L29/78693
摘要： This method for evaluating an oxide semiconductor thin film includes evaluating the stress stability of an oxide semiconductor thin film on the basis of the light emission intensity of luminescent light excited when radiating an electron beam or excitation light at a sample at which the oxide semiconductor thin film is formed. The stress stability of the oxide semiconductor thin film is evaluated on the basis of the light emission intensity (L1) observed in the range of 1.6-1.9 eV of the luminescent light excited from the oxide semiconductor thin film.
摘要翻译： 该氧化物半导体薄膜的评价方法包括以下方式评价氧化物半导体薄膜的应力稳定性：基于在使氧化物半导体薄膜的样品照射电子束或激发光时激发的发光的发光强度 形成了。 基于在从氧化物半导体薄膜激发的发光光的1.6-1.9eV的范围内观察到的发光强度（L1）来评价氧化物半导体薄膜的应力稳定性。
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