公开(公告)号：US20210079262A1

公开(公告)日：2021-03-18

申请号：US16954350

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Hae Won YANG ,  Jun Ha HWANG ,  Jung Yoon KIM ,  Kwang Soo PARK

IPC: C09G1/02 ,  H01L21/321

Abstract: The present invention relates to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a nitride film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20220177727A1

公开(公告)日：2022-06-09

申请号：US17415703

申请日：2019-07-11

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02

Abstract: The present disclosure relates to a polishing slurry composition for an STI process and, more specifically, to a polishing slurry composition for an STI process, the polishing slurry composition comprising: a polishing solution including polishing particles; and an additive solution containing a polymer having an amide bond, and a polysilicon film polishing barrier inclusive of a monomer having three or more chains linked to one or more atoms.

公开(公告)号：US20210189178A1

公开(公告)日：2021-06-24

申请号：US17123115

申请日：2020-12-16

Applicant: KCTECH CO., LTD.

Inventor： Gi Joo SHIN ,  Jung Yoon KIM ,  Kwang Soo PARK ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09K3/14

Abstract: A polishing slurry composition enabling implementation of multi-selectivity is provided. The polishing slurry composition includes: a polishing liquid including abrasive particles; and an additive liquid, in which the additive liquid includes a polymer having an amide bond, and a cationic polymer.

公开(公告)号：US20230212429A1

公开(公告)日：2023-07-06

申请号：US18088607

申请日：2022-12-25

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  In Seol HWANG ,  Hyun Goo KONG

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: Provided is a slurry composition for a metal film for a contact process. A polishing slurry composition includes abrasive particles, a compound including one or more functional groups capable of hydrogen bonding, a nonionic polymer including one or more hydrophilic functional groups in a repeating unit structure, and an oxidizer.

公开(公告)号：US20220064489A1

公开(公告)日：2022-03-03

申请号：US17415705

申请日：2019-07-03

Applicant: KCTECH CO., LTD.

Inventor： Soo Wan CHOI ,  Jung Yoon KIM ,  Nak Hyun CHOI ,  Hae Won YANG

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises a polishing solution containing polishing particles; and an additive solution containing a non-ionic polymer and a polishing selectivity controller. The polishing slurry composition of the present disclosure has a high polishing rate for silicon oxide films and polysilicon films, leaves no residues after shallow trench isolation (STI) polishing of semiconductor devices, and can reduce the amount of silicon oxide film dishing and decrease scratches.

公开(公告)号：US20210179891A1

公开(公告)日：2021-06-17

申请号：US17121770

申请日：2020-12-15

Applicant: KCTECH CO., LTD.

Inventor： Kwang Soo PARK ,  Jun Ha HWANG ,  Jung Yoon KIM ,  Nak Hyun CHOI

IPC: C09G1/02 ,  C09G1/16 ,  H01L21/321

Abstract: A polishing slurry composition for a shallow trench isolation (STI) process is provided. The polishing slurry composition includes abrasive particles, a nonionic polymer, and a polar amino acid.

公开(公告)号：US20220064488A1

公开(公告)日：2022-03-03

申请号：US17415704

申请日：2019-11-04

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Jung Yoon KIM ,  Hae Won YANG ,  Soo Wan CHOI

IPC: C09G1/02 ,  C09G1/04

Abstract: The present invention relates to a polishing slurry composition. A polishing slurry composition according to an embodiment of the present disclosure comprises: a nonionic polymer having at least one amide bond; a selectivity control agent; and abrasive particles.

公开(公告)号：US20210163785A1

公开(公告)日：2021-06-03

申请号：US16954338

申请日：2018-11-13

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Kwang Soo PARK ,  Hae Won YANG

IPC: C09G1/02 ,  H01L21/762 ,  H01L21/3105 ,  C08L77/00 ,  C08G73/02

Abstract: The present invention relates to a polishing slurry composition for an STI process and, more particularly, to a polishing slurry composition for an STI process, the composition comprising: a polishing solution including polishing particles; and an additive solution containing a polysilicon film polishing barrier inclusive of a polymer having an amide bond.

公开(公告)号：US20190316003A1

公开(公告)日：2019-10-17

申请号：US16302604

申请日：2017-04-14

Applicant: KCTECH CO., LTD.

Inventor： Jung Yoon KIM ,  Jun Ha HWANG ,  Sun Kyoung KIM ,  Kwang Soo PARK

IPC: C09G1/02 ,  C09K13/00 ,  C09K3/14

Abstract: The present invention relates to a slurry composition for polishing a high stepped region. The slurry composition for polishing a high stepped region according to an embodiment of the present invention comprises: a polishing liquid containing metal oxide abrasive particles dispersed by positive charges; and an additive liquid containing a polymer comprising at least one element capable of being activated as a positive charge, wherein the polishing selection ratio of the stepped region removal rate in an oxide film pattern wafer having convex portions and concave portions and the stepped region removal rate in an oxide film flat wafer is at least 5:1.

公开(公告)号：US20190211245A1

公开(公告)日：2019-07-11

申请号：US16331137

申请日：2017-06-21

Applicant: KCTECH CO., LTD.

Inventor： Nak Hyun CHOI ,  Kwang Soo PARK ,  Jung Yoon KIM ,  Jun Ha HWANG

IPC: C09K3/14

CPC classification number: C09K3/1436 ,  C09G1/02 ,  C09K3/14 ,  C09K3/1409

Abstract: The present invention relates to surface-modified colloidal ceria abrasive particles, a preparation method therefor, and a polishing slurry composition containing the same. According to one embodiment of the present invention, the surface-modified colloidal ceria abrasive particles comprise: colloidal ceria abrasive particles; and cerium atoms and hydroxyl groups (—OH) formed on the surface of the colloidal ceria abrasive particles.