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    Method of fabricating a nonvolatile semiconductor memory
    1.
    发明申请
    Method of fabricating a nonvolatile semiconductor memory 失效
    制造非易失性半导体存储器的方法

    公开(公告)号：US20060183285A1

    公开(公告)日：2006-08-17

    申请号：US11335682

    申请日：2006-01-20

    Applicant: Katsuji Yoshida

    Inventor： Katsuji Yoshida

    IPC: H01L21/336

    CPC classification number: H01L21/28273 ,  H01L21/31111 ,  H01L21/31116

    Abstract: In a process for fabricating a nonvolatile semiconductor memory of the tunneling type, when tunnel windows are formed in an oxide film on a semiconductor substrate, the oxide film is etched first by a dry etching process, then by a wet etching process. The dry etching process quickly removes most of the oxide material in the window areas, without enlarging the windows laterally, but stops short of the substrate, thereby avoiding damage to the substrate surface. The wet etching process takes the windows the rest of the way down to the semiconductor substrate surface. Since only a small amount of oxide needs to be wet-etched, lateral enlargement of the windows by the wet etching process can be tightly controlled, and small tunnel windows can be formed without the need for extravagantly sophisticated fabrication equipment.

    Abstract translation: 在制造隧道型非易失性半导体存储器的工艺中，当在半导体衬底上的氧化膜中形成隧道窗时，首先通过干式蚀刻工艺，然后通过湿式蚀刻工艺来蚀刻氧化膜。 干蚀刻工艺快速地去除窗口区域中的大部分氧化物材料，而不会横向扩大窗口，而是缩短基板的距离，从而避免损坏基板表面。 湿式蚀刻工艺使窗户的其余部分向下到达半导体衬底表面。 由于只需要少量的氧化物需要湿式蚀刻，所以可以严格地控制通过湿法蚀刻工艺的窗户的横向扩大，并且可以形成小的隧道窗，而不需要奢侈的复杂的制造设备。

    Method of manufacturing semiconductor element
    5.
    发明授权
    Method of manufacturing semiconductor element 有权
    制造半导体元件的方法

    公开(公告)号：US07732272B2

    公开(公告)日：2010-06-08

    申请号：US10677221

    申请日：2003-10-03

    Applicant: Takashi Ohsako ,  Hirotaka Mori ,  Katsuji Yoshida

    Inventor： Takashi Ohsako ,  Hirotaka Mori ,  Katsuji Yoshida

    IPC: H01L21/8238

    CPC classification number: H01L29/6653 ,  H01L29/6659 ,  H01L29/7833

    Abstract: A method of manufacturing a semiconductor device includes a process of forming a gate electrode having a metallic silicide layer on a semiconductor substrate, a process of decreasing boundaries of grains on the surface of the metallic silicide layer, at least a portion of which is exposed, and a process of forming spacers comprising an oxide film on the side wall of the gate electrode; in this order. Thus, abnormal oxidation of the metallic silicide layer is avoided.

    Abstract translation: 制造半导体器件的方法包括在半导体衬底上形成具有金属硅化物层的栅电极的工艺，其中至少一部分被暴露的金属硅化物层的表面上的晶粒边界减小的过程， 以及在栅电极的侧壁上形成包含氧化物膜的间隔物的工艺; 按此顺序 因此，避免了金属硅化物层的异常氧化。

    Method of fabricating a nonvolatile semiconductor memory
    6.
    发明授权
    Method of fabricating a nonvolatile semiconductor memory 失效
    制造非易失性半导体存储器的方法

    公开(公告)号：US07205197B2

    公开(公告)日：2007-04-17

    申请号：US11335682

    申请日：2006-01-20

    Applicant: Katsuji Yoshida

    Inventor： Katsuji Yoshida

    IPC: H01L21/8247

    CPC classification number: H01L21/28273 ,  H01L21/31111 ,  H01L21/31116

    Abstract: In a process for fabricating a nonvolatile semiconductor memory of the tunneling type, when tunnel windows are formed in an oxide film on a semiconductor substrate, the oxide film is etched first by a dry etching process, then by a wet etching process. The dry etching process quickly removes most of the oxide material in the window areas, without enlarging the windows laterally, but stops short of the substrate, thereby avoiding damage to the substrate surface. The wet etching process takes the windows the rest of the way down to the semiconductor substrate surface. Since only a small amount of oxide needs to be wet-etched, lateral enlargement of the windows by the wet etching process can be tightly controlled, and small tunnel windows can be formed without the need for extravagantly sophisticated fabrication equipment.

    Abstract translation: 在制造隧道型非易失性半导体存储器的工艺中，当在半导体衬底上的氧化膜中形成隧道窗时，首先通过干式蚀刻工艺，然后通过湿式蚀刻工艺来蚀刻氧化膜。 干蚀刻工艺快速地去除窗口区域中的大部分氧化物材料，而不会横向扩大窗口，而是缩短基板的距离，从而避免损坏基板表面。 湿式蚀刻工艺使窗户的其余部分向下到达半导体衬底表面。 由于只需要少量的氧化物需要湿式蚀刻，所以可以严格地控制通过湿法蚀刻工艺的窗户的横向扩大，并且可以形成小的隧道窗，而不需要奢侈的复杂的制造设备。

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