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公开(公告)号：US08144741B2
公开(公告)日：2012-03-27
申请号：US12823172
申请日：2010-06-25
Applicant: Kazuhisa Takagi
Inventor： Kazuhisa Takagi
IPC: H01S5/00
CPC classification number: H01S5/12 , H01S5/1064 , H01S5/1225 , H01S5/124 , H01S5/20 , H01S5/22
Abstract: A semiconductor laser comprises: a substrate; an n-cladding layer disposed on the substrate; an active layer disposed on the n-cladding layer; a p-cladding layer disposed on the active layer and forming a waveguide ridge; and a diffraction grating layer disposed between the active layer and the n-cladding layer or the p-cladding layer and including a phase shift structure in a part of the diffraction grating layer in an optical waveguide direction. The width of the p-cladding layer is increased in a portion corresponding to the phase shift structure of the diffraction grating layer.
Abstract translation: 半导体激光器包括：基板; 设置在所述基板上的n包层; 设置在n包层上的有源层; p层，设置在有源层上并形成波导脊; 以及设置在有源层和n包层或p包层之间的衍射光栅层，并且在衍射光栅层的一部分中在光波导方向上包括相移结构。 p型覆层的宽度在与衍射光栅层的相移结构对应的部分增加。
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公开(公告)号：US20120056293A1
公开(公告)日：2012-03-08
申请号：US13279460
申请日：2011-10-24
Applicant: Kazuhisa Takagi
Inventor： Kazuhisa Takagi
IPC: H01L31/0232
CPC classification number: H01S5/22 , B82Y20/00 , H01S5/1053 , H01S5/1057 , H01S5/124 , H01S5/2222 , H01S5/227 , H01S5/3412 , H01S5/509
Abstract: A semiconductor optical element has an active layer including quantum dots. The density of quantum dots in the resonator direction in a portion of the active layer in which the density of photons is relatively high is increased relative to the density of quantum dots in a portion of the active layer in which the density of photons is relatively low.
Abstract translation: 半导体光学元件具有包括量子点的有源层。 光子密度相对较高的有源层部分中的谐振器方向的量子点的密度相对于有源层的一部分中的光子的密度相对较低的部分的量子点的密度而增加 。
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3.发明授权Gain-coupled distributed feedback semiconductor laser having an improved diffraction grating 失效具有改进的衍射光栅的增益耦合分布反馈半导体激光器公开(公告)号：US07773652B2
公开(公告)日：2010-08-10
申请号：US11475136
申请日：2006-06-27
Applicant: Kazuhisa Takagi , Keisuke Matsumoto
Inventor： Kazuhisa Takagi , Keisuke Matsumoto
IPC: H01S5/00
CPC classification number: H01S5/1228
Abstract: In a gain-coupled distributed feedback semiconductor laser, a coating of a low reflectivity is provided on a front facet from which laser light is emitted and a coating of a high reflectivity is provided on a rear facet, thus forming asymmetric coatings. The semiconductor laser has a structure in which an absorption diffraction grating is located along an optical waveguide, and the diffraction grating includes a phase shift region.
Abstract translation: 在增益耦合分布式反馈半导体激光器中，在发射激光的前刻面上提供低反射率的涂层，并且在后面提供高反射率的涂层，从而形成不对称涂层。 半导体激光器具有其中吸收衍射光栅沿着光波导定位的结构，并且衍射光栅包括相移区域。
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公开(公告)号：US06999485B2
公开(公告)日：2006-02-14
申请号：US10405631
申请日：2003-04-03
Applicant: Kazuhisa Takagi
Inventor： Kazuhisa Takagi
Abstract: A kink-free semiconductor optical device stabilizing laser oscillation and producing a high optical performance. The semiconductor optical device includes a beam waveguide extending in a longitudinal direction between a pair of end surfaces. The beam waveguide includes an active layer having a quantum well structure with at least one well layer and two barrier layers, and a pair of cladding layers sandwiching the active layer. The active layer has first and second regions in the longitudinal direction, the photon density in the first region being larger than in the second region. The first region has a differential gain greater than the second region so that variation of refractive index across the beam waveguide is reduced.
Abstract translation: 稳定激光振荡并产生高光学性能的无扭曲的半导体光学器件。 半导体光学器件包括在一对端面之间沿纵向延伸的光束波导。 光束波导包括具有至少一个阱层和两个阻挡层的量子阱结构的有源层和夹持该有源层的一对覆层。 有源层在纵向上具有第一和第二区域，第一区域中的光子密度大于第二区域中的光子密度。 第一区域具有大于第二区域的差分增益，使得横跨波导管的折射率的变化减小。
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公开(公告)号：US06542525B1
公开(公告)日：2003-04-01
申请号：US09511249
申请日：2000-02-23
Applicant: Keisuke Matsumoto , Kazuhisa Takagi
Inventor： Keisuke Matsumoto , Kazuhisa Takagi
IPC: H01S310
CPC classification number: H01S5/0265
Abstract: A modulator and an integrated semiconductor modulator-laser device, in which the capacitance of the modulator is reduced to increase the cut-off frequency, and a manufacturing process for the device. A wire layer connecting a modulator electrode to a pad electrode is interposed between a first embedded layer of InP doped with Fe, extending from the modulator portion, between the insulating layer and the substrate. The wire layer has a capacitance smaller than when the first embedded layer is not beneath the insulating layer. The cut-off frequency of the modulator is increased, improving frequency characteristics. An integrated semiconductor modulator-laser device can include such a modulator.
Abstract translation: 调制器和集成半导体调制器 - 激光器件，其中调制器的电容被减小以增加截止频率，以及该器件的制造过程。 将调制器电极连接到焊盘电极的导线层介于掺杂有Fe的InP的第一嵌入层之间，从调制器部分延伸到绝缘层和衬底之间。 导线层的电容小于当第一嵌入层不在绝缘层下方时的电容。 调制器的截止频率增加，频率特性得到改善。 集成半导体调制器 - 激光器件可以包括这种调制器。
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Patent Agency Ranking
公开(公告)号：US6021148A
公开(公告)日：2000-02-01
申请号：US925742
申请日：1997-09-09
Applicant: Keisuke Matsumoto , Eitaro Ishimura , Kazuhisa Takagi
Inventor： Keisuke Matsumoto , Eitaro Ishimura , Kazuhisa Takagi
CPC classification number: H01S5/0265 , H01S5/00 , H01S5/2206
Abstract: A semiconductor laser device in which a semiconductor laser emitting laser light and a light modulator modulating the laser light are integrated on a compound semiconductor substrate, includes a hole trapping layer for suppressing a reactive current that is generated when the semiconductor laser is operated and that does not contribute to laser oscillation. The hole trapping layer has a first region in the semiconductor laser and a second region in the light modulator. The hole trapping layer has a high carrier concentration and a low resistance and is discontinuous between the semiconductor laser and the light modulator, so that isolation between the laser and the modulator is increased, whereby a high-frequency signal applied to the light modulator is prevented from flowing through the hole trapping layer into the laser. Therefore, even when long-distance transmission is carried out using the semiconductor laser device, deterioration of transmitted wave is suppressed, resulting in satisfactory transmission characteristics.
Abstract translation: 其中半导体激光发射激光和调制激光的光调制器集成在化合物半导体衬底上的半导体激光器件包括用于抑制半导体激光器工作时产生的无功电流的空穴俘获层， 无助于激光振荡。 空穴捕获层具有半导体激光器中的第一区域和光调制器中的第二区域。 空穴捕获层具有高载流子浓度和低电阻，并且在半导体激光器和光调制器之间是不连续的，使得激光器和调制器之间的隔离增加，从而防止施加到光调制器的高频信号 从空穴捕获层流入激光器。 因此，即使使用半导体激光装置进行长距离传输，也能抑制透射波的劣化，导致良好的透射特性。
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7.发明授权Semiconductor laser including tunnel diode for reducing contact resistance 失效半导体激光器包括用于降低接触电阻的隧道二极管
公开(公告)号：US5751754A
公开(公告)日：1998-05-12
申请号：US594467
申请日：1996-01-31
Applicant: Kazuhisa Takagi
Inventor： Kazuhisa Takagi
CPC classification number: H01S5/0425 , H01S5/0421 , H01S5/2275 , H01S5/3095 , H01S5/32391
Abstract: A semiconductor laser includes an n type semiconductor substrate, an n type cladding layer, an active layer having an effective band gap energy, a p type cladding layer, and a tunnel diode structure including a high dopant concentration p type semiconductor layer and a high dopant concentration n type semiconductor layer having an effective band gap energy larger than the effective band gap energy of the active layer, a p side electrode disposed on the tunnel diode structure, and an n side electrode disposed on the rear surface of the n type semiconductor substrate. Since this semiconductor laser includes the tunnel diode structure disposed in the reverse bias direction with respect to the current flow direction, the contact resistivity of the ohmic contact of the p side electrode is lowered as compared to the case where the p side electrode is disposed on a p type semiconductor layer. The effective contact resistivity of the p side electrode is reduced. As a result, a semiconductor laser including a p side electrode having a low contact resistivity ohmic contact is realized.
Abstract translation: 半导体激光器包括n型半导体衬底，n型覆层，具有有效带隙能的有源层，ap型包覆层和包括高掺杂浓度p型半导体层和高掺杂浓度的隧道二极管结构 n型半导体层，其有效带隙能量大于有源层的有效带隙能量，设置在隧道二极管结构上的p侧电极，以及设置在n型半导体衬底的背面上的n侧电极。 由于该半导体激光器包括相对于电流流动方向设置在反向偏置方向上的隧道二极管结构，所以与p侧电极配置的情况相比，p侧电极的欧姆接触的接触电阻降低 ap型半导体层。 p侧电极的有效接触电阻降低。 结果，实现了包括具有低接触电阻率欧姆接触的p侧电极的半导体激光器。
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公开(公告)号：US5636234A
公开(公告)日：1997-06-03
申请号：US491068
申请日：1995-06-16
Applicant: Kazuhisa Takagi
Inventor： Kazuhisa Takagi
CPC classification number: H01S5/02272 , H01S5/4018 , H01L2224/48091 , H01L2924/13062 , H01L2924/30107 , H01S5/02469 , H01S5/0428 , H01S5/06825 , H01S5/3086 , H01S5/4043
Abstract: A semiconductor laser device includes a semiconductor laser chip containing a diode having a polarity; a heat sink on which the semiconductor laser chip is mounted at an interface of the semiconductor laser chip and the heat sink, the heat sink including a pn junction generally parallel to the interface; and a block on which the heat sink is mounted, wherein the diode of the semiconductor laser chip and the pn junction are electrically connected in parallel and in opposite polarity so that the pn junction of the heat sink functions as a reverse current blocking diode for the semiconductor laser chip.
Abstract translation: 半导体激光装置包括：具有极性的二极管的半导体激光芯片; 半导体激光芯片安装在半导体激光芯片和散热片的界面处的散热器，散热器包括大致平行于界面的pn结; 以及其上安装有散热器的块，其中半导体激光器芯片和pn结的二极管并联并且以相反的极性电连接，使得散热器的pn结用作反向电流阻塞二极管，用于 半导体激光芯片。
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9.发明授权Method of reducing dimethyl polysiloxane remaining in silicone rubber products to the ultra-micro level 失效将硅橡胶制品中剩余的二甲基聚硅氧烷还原至超微水平的方法
公开(公告)号：US4933432A
公开(公告)日：1990-06-12
申请号：US221469
申请日：1988-07-19
Applicant: Shigeyoshi Yokoyama , Kazuhisa Takagi
Inventor： Shigeyoshi Yokoyama , Kazuhisa Takagi
CPC classification number: C08G77/34 , B01D11/0261
Abstract: A method is provided for the reduction of the level of dimethyl polysilioxane remaining in a silicone rubber product containing said dimethyl polysiloxane to an ultra-micro level, comprising the steps of immersing the silicone rubber product in an organic solvent for the dimethyl polysiloxane and subjecting the immersed product to ultrasonic vibrations in the organic solvent.
Abstract translation: 提供了一种将含有所述二甲基聚硅氧烷的硅橡胶制品中剩余的二甲基聚硅氧烷的水平降低到超微量水平的方法，包括以下步骤：将硅橡胶制品浸渍在二甲基聚硅氧烷的有机溶剂中， 浸渍产品在有机溶剂中超声波振动。
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公开(公告)号：US20110171480A1
公开(公告)日：2011-07-14
申请号：US13119099
申请日：2009-09-15
Applicant: Kunio Mori , Kazuhisa Takagi
Inventor： Kunio Mori , Kazuhisa Takagi
CPC classification number: C09J183/04 , B32B9/005 , B32B15/08 , B32B15/20 , B32B25/08 , B32B27/08 , B32B27/283 , B32B38/0008 , B32B2311/00 , B32B2319/00 , C08G77/16 , C08J5/12 , C08J2383/04 , Y10T428/31663
Abstract: A simple silicone-rubber bonded object is provided in which non-flowable substrates, i.e., a three-dimensional silicone rubber elastic substrate molded beforehand and an adherend substrate, were able to be tenaciously bonded to each other without using a flowable curable adhesive or pressure-sensitive adhesive and which is inexpensive and has high productivity. The silicone-rubber bonded object comprises a three-dimensional silicone rubber elastic substrate having hydroxyl groups on the surface and an adherend substrate having hydroxyl groups on the surface, the substrates having been laminated to each other through covalent bonding between the hydroxyl groups of both. The elastic substrate and/or the adherend substrate has undergone corona discharge treatment and/or plasma treatment, whereby the hydroxyl groups have been formed on the surface thereof.
Abstract translation: 提供了一种简单的硅橡胶粘合物体，其中不可流动的基材，即预先模制的三维硅橡胶弹性基材和被粘物基材能够彼此牢固地粘合，而不使用可流动的可固化粘合剂或压力 敏感性粘合剂，其便宜且生产率高。 硅橡胶粘合体包括在表面具有羟基的三维硅橡胶弹性基材和表面具有羟基的被粘物基材，通过两者的羟基之间的共价键彼此层压。 弹性基材和/或被粘物基材经过电晕放电处理和/或等离子体处理，由此在其表面上形成羟基。
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